T0T725D Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs Chip Form Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

bti ss-1

Abstract: rs-flip-flop cmos
Contextual Info: TC6085AU GENERAL The TC6085AU is a CMOS LSI chip for generating PAL television synchronization signals and operating a 470,000- pixel FITCCD area image sensor. This chip covers the electronic shutter mode of 1/50 to 1/2000 seconds. It has a vertical reset pin that enables

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P idB = 39 dBm at 4.4 GHz to 5.0 GHz