PD45128163
Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).
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PD45128163-I
128M-bit
PD45128163
728-bit
54-pin
M01E0107
E0346N10
uPD45128163G5-A10I-9JF
uPD45128163G5-A10LI-9JF
uPD45128163G5-A75I-9JF
uPD45128163G5-A75LI-9JF
uPD45128163G5-A80I-9JF
uPD45128163G5-A80LI-9JF
PD45128163-I
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PD45128163
Abstract: uPD45128163G5-A75-9JF-E
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
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PD45128163-E
128M-bit
PD45128163
728-bit
54-pin
M01E0107
uPD45128163G5-A75-9JF-E
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PD45128163
Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
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PD45128163
128M-bit
PD45128163
728-bit
54-pin
M01E0107
PD45128163G5-A10-9JF
PD45128163G5-A75-9JF
PD45128163G5-A75A-9JF
PD45128163G5-A75L-9JF
PD45128163G5-A80-9JF
PD45128163G5-A80L-9JF
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uPD45128163G5-A75LT-9JF
Abstract: PD45128163 uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).
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PD45128163-T
128M-bit
PD45128163
728-bit
54-pin
M01E0107
uPD45128163G5-A75LT-9JF
uPD45128163G5-A10LT-9JF
uPD45128163G5-A10T-9JF
uPD45128163G5-A75T-9JF
uPD45128163G5-A80LT-9JF
uPD45128163G5-A80T-9JF
PD45128163-T
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PD45128163
Abstract: uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-I-E 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).
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PD45128163-I-E
128M-bit
PD45128163
728-bit
54-pin
M01E0107
E0729N10
uPD45128163G5-A75I-9JF-E
uPD45128163G5-A75LI-9JF-E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216CASA 8M words x 16 bits Description Pin Configurations The EDL1216CA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline architecture. All inputs
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EDL1216CASA
EDL1216CA
54-ball
M01E0107
E0195E30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216AASA 8M words x 16 bits Description Pin Configurations The EDL1216AA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline architecture. All inputs
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EDL1216AASA
EDL1216AA
54-ball
M01E0107
E0196E30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216CASA 8M words x 16 bits Description Pin Configurations The EDL1216CA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the
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EDL1216CASA
EDL1216CA
54-ball
M01E0107
E0195E20
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216BASA 8M words x 16 bits Description Pin Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the
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EDL1216BASA
EDL1216BA
54-ball
M01E0107
E0255E10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216BASA 8M words x 16 bits Description Pin Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline architecture. All inputs
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EDL1216BASA
EDL1216BA
54-ball
M01E0107
E0255E20
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EDL5132CBMA
Abstract: b008m
Text: PRELIMINARY DATA SHEET 512M bits Mobile RAM MCP 2 pcs of 256Mb components EDL5132CBMA 16M words x 32 bits Description Pin Configurations The EDL5132CBMA is a 512M bits Mobile RAM MCP (Multi Chip Package) organized as 4,194,304 words × 32 bits × 4 banks, 2 pieces of 256M bits Mobile RAM in
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256Mb
EDL5132CBMA
EDL5132CBMA
90-ball
M01E0107
E0490E30
b008m
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 128M bits Mobile RAM EDL1216AASA 8M words x 16 bits Description Pin Configurations The EDL1216AA is a 128M bits Mobile RAM organized as 2,097,152 words × 16 bits × 4 banks. The low power synchronous DRAMs achieved low power consumption and high-speed data transfer using the
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EDL1216AASA
EDL1216AA
54-ball
M01E0107
E0196E20
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EDL6416BABH-75-E
Abstract: edl6416
Text: PRELIMINARY DATA SHEET 64M bits Mobile RAM EDL6416BABH 4M words x 16 bits Description Pin Configurations The EDL6416BABH is a 64M bits Mobile RAM organized as 1,048,576 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline
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EDL6416BABH
EDL6416BABH
54-ball
M01E0107
E0421E30
EDL6416BABH-75-E
edl6416
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EDL6416CABH-10-E
Abstract: edl6416
Text: PRELIMINARY DATA SHEET 64M bits Mobile RAM EDL6416CABH 4M words x 16 bits Description Pin Configurations The EDL6416CABH is a 64M bits Mobile RAM organized as 1,048,576 words × 16 bits × 4 banks. The Mobile RAM achieved low power consumption and high-speed data transfer using the pipeline
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EDL6416CABH
EDL6416CABH
54-ball
M01E0107
E0422E30
EDL6416CABH-10-E
edl6416
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AA15
Abstract: AB16 AB17 EP1K100
Text: EP1K100 Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS(2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)
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EP1K100
208-Pin
AA15
AB16
AB17
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EPF6016
Abstract: 216 C9 T20 ver 2
Text: EPF6016 Device Pin-Outs ver. 1.0 Pin Name 1 144-Pin TQFP EPF6016 208-Pin PQFP EPF6016 240-Pin PQFP EPF6016 256-Pin BGA EPF6016 MSEL (2) 33 46 52 T3 nSTATUS (2) 56 80 92 W11 nCONFIG (2) 53 77 89 Y11 DCLK (2) 128 184 212 C10 CONF_DONE (2) 105 150 172 E18 INIT_DONE (3)
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EPF6016
144-Pin
EPF6016
208-Pin
240-Pin
256-Pin
EPF6024AB256
216 C9
T20 ver 2
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EPF6024A
Abstract: No abstract text available
Text: EPF6024A Device Pin-Outs ver. 1.0 Pin Name 1 144-Pin TQFP EPF6024A 208-Pin PQFP EPF6024A 240-Pin PQFP EPF6024A 256-Pin BGA EPF6024A 256-Pin FineLine BGA EPF6024A MSEL (2) 33 46 52 T3 L5 nSTATUS (2) 56 80 92 W11 K8 nCONFIG (2) 53 77 89 Y11 N8 DCLK (2) 128
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EPF6024A
144-Pin
EPF6024A
208-Pin
240-Pin
256-Pin
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AA13
Abstract: AA15 AB16 EP1K50 AA11AA13
Text: EP1K50 Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)
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EP1K50
144-Pin
208-Pin
AA13
AA15
AB16
AA11AA13
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484-pin BGA
Abstract: AA13 AA15 AB16 EPF10K30E
Text: EPF10K30E Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)
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EPF10K30E
144-Pin
208-Pin
256-Pin
484-pin BGA
AA13
AA15
AB16
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diode t25 4 H9
Abstract: diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8
Text: Pin Information For The Stratix EP1S10 Device, ver 3.7 Note 2 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1
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EP1S10
PT-EP1S10-3
EP1S10F484.
diode t25 4 H9
diode t25 4 L9
diode t25 4 k6
diode t25 4 k8
diode t25 4 G9
diode t25 4 F8
diode t25 4 B9
diode t25 4 g8
diode t25 4 F7
diode t25 4 L8
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AA13
Abstract: AA15 AB16 EPF10K30E
Text: EPF10K30E Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBUSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)
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EPF10K30E
144-Pin
208-Pin
256-Pin
AA13
AA15
AB16
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diode t25 4 H9
Abstract: diode t25 4 L9 diode t25 4 G9 diode t25 4 j3 diode t25 4 k8 diode t25 4 k6 diode AA19 diode T25 4 F8 diode t25 4 g8 diode t25 4 L5
Text: Pin Information For The Stratix EP1S20 Device, ver 3.6 Note 2 Bank Number VREF Bank Pin Name/Function Optional Function(s) B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2
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EP1S20
RX32p
RX32n
TX32p
TX32n
RX31p
PT-EP1S20-3
EP1S20.
diode t25 4 H9
diode t25 4 L9
diode t25 4 G9
diode t25 4 j3
diode t25 4 k8
diode t25 4 k6
diode AA19
diode T25 4 F8
diode t25 4 g8
diode t25 4 L5
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2SD187
Abstract: 2SD348 25D40 c 50275 2SD186 2SD313 2SD314 2SD331 2SD353 2sd400
Text: Type Number •a o> s *■ *3 4 C 00 OS •2 « Q cl. A pplications ca> E 8 *5. o ai 2SD30 LF Power Amp 2SD67 LF Power Amp «> | 3 O Si <3 - V -,m G, AL 40 S, ME 120 2SD68 LF Power Amp - S, ME 75 2SD72 LF Power Amp - G, AL 25 2SD72 LF Power Amp - G, AL
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OCR Scan
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gs/Ta-25Â
2SD30Â
2SD67
1300m
2SD68
2SD72
t720m
2SD72Â
Powe320
2SD387A
2SD187
2SD348
25D40
c 50275
2SD186
2SD313
2SD314
2SD331
2SD353
2sd400
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2SB185
Abstract: 2SB187 2sb22 2sb186 2sb303 2sb342 2SB375A 2SB273
Text: 3 O g 03 Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25°C Vc' bo Veto t VfEH Vkbh I, P, «L I kbo 1<BC> Ve« max VKB max VcK I, - 100- 560 6 lm 110 10 2.2 60- 320 10 10m 130 10 3.2 20 15 /i 6 12/1 1.5 100m - 67-330 - - - - - i : With
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2SA1019
25A1047
2SB22
2SB375A
2SB390
2SB391
2SB185
2SB187
2sb186
2sb303
2sb342
2SB273
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