T2D 8 Search Results

66-219/T2D-AR2S2B5Y/3C

Abstract: t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C
Contextual Info: Technical Data Sheet White Chip LED With Right Angle Lens 66-219/T2D-AR2S2B5Y/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

16-219A

Abstract: t2d 76 transistor t2d
Contextual Info: Technical Data Sheet 0402 Package Chip LED 0.2mm Height 16-219A/T2D-AR2T1QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T2D 90

Abstract: T2D 80 "T2D" T2D 30
Contextual Info: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

T2D 44

Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
Contextual Info: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

Contextual Info: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

T2D DIODE

Abstract: T2D DIODE 02
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2

btw38

Abstract: BTW38 Series
Contextual Info: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to

t2d shindengen

Contextual Info: PowerCl amper •外観図 ST02D140F2 OUTLI NE Package：2F t ：mm Uni カソードマーク Cathode mark 煙パワーツェナーダイオードと FRD を複合 煙面実装 煙スナバ回路用途 T2D 14 00 00 ① 特 長 品名略号 Type No. Feat ur

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

T2D 07

Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
Contextual Info: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

5353482 ic

Abstract: TC8802 TC8802AF t2d 46
Contextual Info: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.

TP0606N7

Contextual Info: TP0606N6 TP0606N7 Çh Super te x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss / BVdgs RdS ON (max) -60V 3.5£2 Order Number / Package 14-Pin P-Dip 14-Pin C-Dip* TP0606N6 TP0606N7 14 pin side brazed ceramic DIP

cerdip 300mil

Abstract: plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024
Contextual Info: HILIPS i n t e r n a t i o n a l Philips Samiconductors-SigneHcs Document No. 853-1157 ECN No. 97652 Date of issue September 15,1989 Status Product Specification FAST Products FEATURES • Ideal for driving transmission lines or backplanes. 160mA lQL Ideal for applications with imped­

Contextual Info: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

T2D DIODE

Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent

T2D 40 DIODE

Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)

T2D 62 diode

Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: IMISC427 SYSTEM CLOCK CHIP CMOS LSI PLL FREQUENCY SYNTHESIZER September 1993 PRODUCT FEA TURES • Generates All Essential Clock Signals for the Motherboards ■ 4V to 7V Operating Supply Range ■ Supports 8086, 80286, 80386 and 80486 Based Designs ■ Integrates Keyboard Clock, CPU Clocks, 12X Serial

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C