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    Bourns Inc BDT60B-S

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    BDT60B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT60B Bourns PNP SILICON POWER DARLINGTONS Original PDF
    BDT60B Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT60B Power Innovations PNP SILICON POWER DARLINGTON Original PDF
    BDT60B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT60B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT60B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT60B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT60B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT60B Transys Electronics BJT, PNP, Darlington Power Transistor, IC 4A Scan PDF
    BDT60B Transys Electronics PNP SILICON POWER DARLINGTONS Scan PDF
    BDT60BF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT60BF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT60BF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT60BF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT60B-S Bourns PNP DARLINGTON 100V 4A Original PDF

    BDT60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT60

    Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60 BDT60 BDT60C BDT60A BDT60B BDT61 BDT61A BDT61C

    BDT60C

    Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT60C BDT61A BDT60 BDT60A BDT61 BDT61B BDT61C

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    BDT60AF

    Abstract: BDT60BF BDT60CF BDT60F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF


    Original     		PDF BDT60F; BDT60AF -100V BDT60BF; -120V BDT60CF BDT61F/61AF/61BF/61CF BDT60F BDT60BF BDT60AF BDT60BF BDT60CF BDT60F

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60

    TCS-11

    Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B TCS-11 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61C

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60

    BDT60C

    Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B BDT60C BDT60 BDT60A BDT60B BDT61 BDT61A BDT61C

    sas110

    Abstract: 750-AT-1 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61 sas110 750-AT-1 BDT60 BDT60A BDT60C BDT61 BDT61A BDT61B BDT61C

    BDT61

    Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT61 BDT60C BDT61C BDT60 BDT60A BDT61A BDT61B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    LC1 DT60

    Abstract: BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C IEC134 z825
    Text: BDT60;60A BDT60B;60C PHILIPS INTERNA TIO NA L SbE D • TllOôEb O O l43EQ4 bTl « P H I N T- 33 - ? SILICON DARLINGTON POWER TRANSISTORS P-N-P s ilic o n po w e r transistors in m o n o lith ic D arlington c irc u it fo r a u d io o u tp u t stages and general


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. LC1 DT60 BDT61 BDT61A BDT61C IEC134 z825

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    BF 331 TRANSISTORS

    Abstract: bdt60bf
    Text: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CF BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F BF 331 TRANSISTORS bdt60bf

    BDT60

    Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
    Text: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C T0-220 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C T0-220 BDT61

    dg432

    Abstract: No abstract text available
    Text: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.


    OCR Scan     		PDF BDT60 BDT60B 711002b 00432G4 BDT61, BDT61A, BDT61B BDT61C. O-220. dg432

    60AF

    Abstract: BDT60AF BDT60BF BDT60F BDT61AF BDT61BF BDT61CF BDT61F
    Text: BDT60F; BDT60AF J ^BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CM OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F 60AF BDT60AF BDT60BF BDT61AF BDT61CF BDT61F

    BDT60AF

    Abstract: BDT60BF BDT60CF BDT60F BDT61AF BDT61BF BDT61CF BDT61F 0043E
    Text: BDT60F; BDT60AF BDT60BF; BDT60CF PHILIPS INT ER NA TI ON AL SbE m D 7110 äEb 0043212 SILICON DARLINGTON POWER TRANSISTORS 77 fl M P H I N T~3 J - J / PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electricaliy insulated mounting base.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CF 0043E12 OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60AF BDT60BF BDT60CF BDT60F BDT61AF BDT61CF BDT61F 0043E

    BDT618

    Abstract: BDT60C ST BDT60C BOT61
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK_ • Designed for Complementary Use with BDT60, BOT6OA, BDT60B and BDT60C • 50 W at 2S°C Case Temperature • 4 A Continuous Collector Current


    OCR Scan     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60B BDT60C O-220 8DT61 BDT61A BDT618 BDT60C ST BOT61

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C BDT60 BDT60A

    BDT60C ST

    Abstract: BDT60C
    Text: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C T0-220 BDT60 BDT60A BDT60C ST