T2S SOT Search Results

d4sh8

Abstract: D45H8 NZT45H8 k200g
Contextual Info: D45H8 I NZT45H8 ' N a t i on a I Discrete POWER & Signal Technologies S e m i c o n d u c t o r " D45H8 NZT45H8 SOT-223 TO-220 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.

T2S SOT-23

Abstract: MARKING KV SOT-23 BAW56 PJDLC05
Contextual Info: DATA SHEET PJDLC05 ULTRA LOW CAPACITANCE SINGLE TRANSIENT OVERVOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES VOLTAGE POWER 5.0 Volts 400 Watts SOT- 23 Unit: inch mm FEATURES .103(2.60) .056(1.40) • IEC61000-4-2 ESD 15kV Air, 8kV Contact Compliance .047(1.20)

T2S SOT-23

Abstract: marking O2 SOT-23 T2S SOT
Contextual Info: DATA SHEET PJDLC05 ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This Transient Overvoltage Suppressor is intended to Prodect SOT- 23 Unit: inch mm Sensitive Equipment against Electrostatic Discharge events as well to offer a Minimum Insertion Loss in Data Transmission

T2S SOT-23

Abstract: 5A MARKING CODE SOT23 PJDLC03
Contextual Info: PJDLC03~PJDLC24 POWER SOT-23 400 Watts Unit：inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEEDDATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

jd sot23

Contextual Info: PJDLC05~PJDLC24 VOLTAGE 5 to 24 Volts POWER 400 Watts SOT- 23 Unit: inch mm .103(2.60) .056(1.40) .047(1.20) .119(3.00) .110(2.80) FEATURES .086(2.20) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

jd sot23

Abstract: PJDLC05 PJDLC12 PJDLC15 PJDLC24 T2S SOT-23
Contextual Info: PJDLC05~PJDLC24 VOLTAGE 5 to 24 Volts POWER 400 Watts SOT- 23 Unit: inch mm .103(2.60) .056(1.40) .047(1.20) .119(3.00) .110(2.80) FEATURES .086(2.20) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

TRANSISTOR SMD MARKING CODE 7A

Contextual Info: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223

Contextual Info: HOLTEK H T HT71XX High Voltage Regulator Features • Low power consumption • Low voltage drop • Low temperature coefficient • High input voltage up to 24V • TO-92 and SOT-89 packages Applications • Battery-powered equipment • Communication equipment

T2S SOT-23

Abstract: UDT26A05L udt26a UDT26A05L05 UDT23A05L02
Contextual Info: UDT23A05L02 DESCRIPTION Brightking's UDT23A05L02 component is ultra low capacitance TVS arrays designed to protect high speed data interfaces.This series has been spe-cifically designed to protect sensitive components which are connected to high speed data and transmission lines from overvoltage caused by ESD

HT7136

Abstract: ht71 HT7133
Contextual Info: HOLTEK H T HT71XX _ High Voltage Regulator Features • Low power consumption • Low voltage drop • Low temperature coefficient • High input voltage up to 24V • TO-92 and SOT-89 packages Applications • Battery-powered equipment • Communication equipment

T2S SOT-23

Abstract: PJDLC03
Contextual Info: PJDLC03~PJDLC24 3.3 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

PJDLC05

Abstract: PJDLC12 PJDLC15 PJDLC24 marking dj2 PJDLC03
Contextual Info: PJDLC03~PJDLC24 3.3 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

BFP843

Contextual Info: BFP843 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: PJDLC05~PJDLC24 VOLTAGE 5 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

Contextual Info: PJDLC03~PJDLC24 3.3 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) This transient overvoltage suppressor is intended to prodect sensitive equipment

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

florida rf 100 2a

Abstract: n621 6-32UNC-2A BGY887B DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • High gain 2 common • Excellent return loss properties. 3 common 5 +Vß DESCRIPTION

Contextual Info: Philips Semiconductors Product specification Triple 3-input AND gate 74LV11 FEATURES DESCRIPTION • O ptim ized for Low Voltage applications: 1.0 to 3.6 V The 74LV11 is a low -voltage Si-gate C M O S device and is pin and function com patible with 74H C /H C T11.

SCR C38

Abstract: SCR 957 v426 prx thyristor prx c38 I-50100 v426 sot-89 V4-26
Contextual Info: POÜIEREX INC 3TE D • TSTMbSl GODSBbB 3 « P R X m NEREX_ c38 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control

TDA1543

Abstract: TDA1543 Application Notes JD 803 TDA1543A ne5532 application note A1543 NE5532 TDA1543T
Contextual Info: Product specification Philips Sem iconductors Integrated Circuits Dual 16-bit DAC economy version (l2S input format) FEATURES GENERAL DESCRIPTION • • • • • • The TDA1543 is a m onolithic integrated dual 16-bit digital-toanalog converter (DAC) designed as

74ABT245PW

Abstract: 74ABT245 74ABT245D 74ABT245DB 74ABT245N T143 ba ph 20v diode
Contextual Info: INTEGRATED CIRCUITS 74ABT245 Octal transceiver with direction pin 3-State Product specification 1995 Apr 19 IC23 Data Handbook Philips Semiconductors PHILIPS P H ILIPS 711002b OOflWD ÛTÔ This Material Copyrighted By Its Respective Manufacturer Philips Sem iconductors

BLX14

Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z