T33 NPN Search Results

T33 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

T33 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1T33 Contextual Info: 西普电气网站-产品详细资料页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关系列接近开关>> 开关>>T33 >>T33T33-D8NKS 浏览次数：4 会员价: 欲知价格请登陆	Original	T33-D8NKS 0-30V 200mA 400Hz 1T33	PDF
Contextual Info: 西普电气网站-产品详细资料页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关系列接近开关>> 开关>>T33 >>T33T33-D8NHS 浏览次数：3 会员价: 欲知价格请登陆	Original	T33-D8NHS 0-30V 200mA 400Hz	PDF
Contextual Info: 西普电气网站-产品详细资料页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关系列接近开关>> 开关>>T33 >>T33T33-D8NTS 浏览次数：4 会员价: 欲知价格请登陆	Original	T33-D8NTS 0-30V 200mA 400Hz	PDF
Contextual Info: crimson semiconductor de" inc 2514096 CRIMSON SEMICONDUCTOR INC 99 D 0 0 3 3 5 D \| asmmb T33-0/ EPITAXIAL BASE TO-3 continued NPN PNP Vc«o (V ) 2N 3716 2N 5873 2N 5874 2N 3792 2N 5871 2N 5872 10 0 /8 0 2N 5877 2N 5875 2N 5878 2N 5876 2N 6053 2N 6054 2N 6055	OCR Scan	T33-0/	PDF
2N3571 Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36 Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN	OCR Scan	BFT32 BFT33 BFT34 fBFT35 BFT35 BFT36 BFT37 Max50 2N3571 2N3570 2N4253 2N4252 2N3571 NPN	PDF
T0-202 Abstract: 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1 Contextual Info: hfl E S L S G 1 1 3 D 0 0 3 ^ 5 3 ^ T33 NATL S E M I C O N D VcEO sutt (Volts) Min Device NPN PNP lc Cant (Am ps) Max I1« I g VcE(iat)® le Min M ax (Am ps) 60 180 0.02 (Volts) M ax (Am ps) h (D I S C R E T E ) P D (A m l» p O(Casa) MHz M in (Watts)	OCR Scan	D40N2 T0-202 D40C1 D40C4 D40C5 D40C7 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1	PDF
2N1423 Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T	OCR Scan	NPN110. B170024 4000n 2N1423 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223	PDF
transistor LT5210 Abstract: LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. B170024 4000n transistor LT5210 LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165	PDF
RX1214B150W Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C	OCR Scan	bb53131 RX1214B150W RX1214B150W	PDF
1401-1407 Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T	OCR Scan	NPN110. 500kSA MT14a 2SD222t 2SD223t 2SD224t TRL2015 20MSA TRL2255S 20M5A 1401-1407 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999	PDF
2N725 Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803 Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. B170024 4000n 2N725 L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803	PDF
fa08a Abstract: VS-2500 transistor 902 E113A FT45 Contextual Info: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation	OCR Scan	curreT-33-13 T-33-13 002TM2b fa08a VS-2500 transistor 902 E113A FT45	PDF
78m5 Abstract: mt59 PT2622 Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan		PDF
STC1015D Abstract: 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. B170024 4000n STC1015D 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422	PDF

K1502 Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. B170024 4000n K1502 Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B	PDF
RZ2833B45W Contextual Info: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.	OCR Scan	100/us; 0015S55 RZ2833B45W 7Z24143 RZ2833B45W	PDF
MM2102 Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I	OCR Scan	NPN110. B170024 4000n MM2102 BSW30 ft06 310M 200S A190 A192 A193 A390 T072	PDF
t33b Contextual Info: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control	OCR Scan	711002b 0D31DTS BUV28F BUV28AF T-33M t33b	PDF
TS 4142 Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142 Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage	OCR Scan	0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142	PDF
2N2128 Abstract: T4 0660 2N5577 2N5579 MD38 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N2128 T4 0660 2N5577 2N5579 MD38	PDF
NKT 275 transistor Abstract: 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405 Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T	OCR Scan	NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 NKT 275 transistor 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405	PDF
bus48 Abstract: t335 motorola bus48 Contextual Info: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE \|b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)	OCR Scan		PDF
MJ-10003 Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTOJ j 6367255 MOTOROLA SC DE\|b3t,?2SS 7 34-C. 3 7 9 6 0 D IO D E S /O P T O D T-33 -O / SILICON POWER TRANSISTOR DICE (continued) MJC10007 DIE NO. — NPN LINE SOURCE — PL500.918 This die provides performance equal to or better than that of	OCR Scan	PL500 MJ10002 MJ10003 MJ10006 MJ10007 MJC10007 MJ-10003	PDF
POWER TECHNOLOGY COMPONENTS Abstract: PTC6062 Contextual Info: 6115950 MICROSEMI CORP/POWER 02E □2 00515 ~T-33- D 1 > F \| bllS'ÏSG DDD0S15 1 I - "“ CCC6063 PTC TECHNOLOGY 20 A, 550 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au	OCR Scan	T-33- DDD0S15 CCC6063 emitter-15-mil thickness-12 PTC6060 PTC6061 PTC6062 PTC6063 POWER TECHNOLOGY COMPONENTS	PDF

T33 NPN Search Results

T33 NPN Result Highlights (5)

T33 NPN Datasheets Context Search

1T33

2N3571

T0-202

2N1423

transistor LT5210

RX1214B150W

1401-1407

2N725

fa08a

78m5

STC1015D

K1502

RZ2833B45W

MM2102

t33b

TS 4142

2N2128

NKT 275 transistor

bus48

MJ-10003

POWER TECHNOLOGY COMPONENTS