T491C105K050AS Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

tantulum capacitor

Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

3528

Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
Contextual Info: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491

Contextual Info: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

3528

Abstract: LED+white+SMD+3528
Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications ♦ ♦ ♦ ♦ E Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: MRF6P21190HR6 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MW6S010NR1

Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

T491B225K020AS-F

Abstract: T491B475K016AS T491D106K025AS-F T491X686K020AS-F 3216 capacitor 3528 6032 T491B105K035AS T491B106K010AS T491D226K025AS
Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

Contextual Info: • Type T491 - Chips Solid Tantalum Capacitors MallorY Cap /xF ‘ Cap Tol Case Code - -EIA/ *r IECQ 35 WVDC @ +85°C 23 WVDC @ +125°C + + + + + 0.1 0.15 0.22 0.33 0.47 0.47 0.68 1.0 1.5 2.2 3.3 4.7 4.7 6.8 10 15 22 10% 10% 10%

T491D107K010AS

Abstract: T491B475K010AS 7343H T491B106K010AS chip capacitors 3528 cde T491B335K020AS
Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

T491C106K025AS

Abstract: T491B106K016AS 226 6032 tantalum cap chip capacitors 3528 capacitor 6032 T491C226K006AS T491D476K020AS T491C226K016AS T491A225K016AS T491D226K025AS
Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

A114

Abstract: A115 AN1955 C101 JESD22 MRF6P21190HR6 RFZ24
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

lg tv electronic board schematic

Abstract: MN37112FP c2538 MN3711OFP C3943 V-FBG-28 C2324 BLM21A601SPT LG CCD gerber file PAL 002a
Contextual Info: CRD7666-7C Analog/Digital Evaluation CCD Cameras Features Description l CCD Camera Processor Board l Includes CS7615 Analog Processor l Includes CS7666 Digital Processor l Includes CS4954 TV Encoder l 4:2:2 Component Digital Video l ITU-R BT.656 Compliant Transport

100B102JP50X

Abstract: 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Type T491 Solid Tantalum Chip Capacitors Solid Tantalum Chip Capacitors for Surface Mount Applications Highlights ♦ ♦ ♦ ♦ ♦ Low DF and DC Leakage Temperature Stable 260 ºC for 10 Seconds Soldering Meets IECQ Standard QC300801/US0001 Meets EIA Standard 535BAAC

T491C105K0

Abstract: MA675
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

CRCW12061001F100

Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L