T9 TRANSISTOR Search Results

11105 IC

Abstract: pMOS transistor
Contextual Info: February t9^7 PRELIMINARY ro ML4865 High Voltage High Current Boost Regulator GENERAL DESCRIPTION FEATURES The M L4865 is a high voltage, continuous conduction boost regulator designed for DC to D C conversion in multiple cell battery powered systems. Continuous

power factor PIC circuit

Abstract: dc constant speed control motor drive circuit pic SIEMENS MOTOR load sensor pic circuit TLE 4207 G equivalent PIC dc motor speed control 5208-6G siemens motor series 9 motor control using PIC
Contextual Info: 6 Protection Circuits 6.1 General T T9 task of protection circuits is to protect the motor, the PIC itself, and the other components of the circuit, T 'i:j hazards are • overvoltage, • overcurrent • overtemperature, As described above in the section on disturbances,

Contextual Info: T9 / R9 Long Range RF Modules Features • FM Narrow Band Crystal Stabilised • Range up to 1,000 Metres • 868MHz / 433MHz Versions • 4 channel versions • 434.075MHz • 433.920MHz • 434.225MHz • 434.525MHz • Miniature SIL Package • Data Rates Up To 57Kbps

I682

Abstract: T-973 accm sot23-5 682 SOT23
Contextual Info: T9-73 05; R e v O ; 10/97 A lif lX I A I Sw itched-Capacitor Voltage Doublers G eneral D escription Oscillator control circuitry and four power M O SFET switches are included on-chip. The MAXI 682 operates at 12kHz and the MAX1683 operates at 35kHz. A typi­

TH3L10Z

Abstract: TH3L10 TH3L20 T7K40 2SCI469 2SD574 2sc3427 dica20 T5L20 Tk3Lio
Contextual Info: ? • SEMICONDUCTOR ARISTO-CRAFT t,b « E IA J No. !o A VOBO VOEO •'(V ) (V) T7T5 2SB983 -6 0 -5 0 -7 T 7S 5 2 S D I3 4 5 60 50 7 T 7S 3 2SC3427 50 30 7 T I0 S 4 2SC3428 60 40 10 450 360 PT hFE (W ) (M S ) to n . 40 70 100 50 85 7<4"j:y > /7 max. t9 tf

NJ01

Contextual Info: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect

ARCO 0.1 Z

Abstract: transformer 0-12v VRF151FLMP VK200-4B
Contextual Info: VRF151FL VRF151FLMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

transformer 220-12

Abstract: vrf150 VRF150FL
Contextual Info: VRF150FL VRF150FLMP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

500 watts amplifier schematic diagram

Abstract: 100B4R7 700 watts power amplifier circuit diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier

T16 C6

Abstract: 500 watts amplifier schematic diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

j340 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CDR33BX104AKWS

Abstract: MRF21060 MRF21060S
Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to

T17 motorola

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

j340 motorola make

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

100B100JCA500X

Abstract: CDR33BX104AKWS MRF19060 MRF19060S Circuit Diagram Panasonic Model DIM 74 100B5R1JCA500X
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

100B100JCA500X

Abstract: 465B MRF21090 MRF21090S
Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

2001RF

Abstract: J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 GX03005522 NI-780
Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

T17 TRANSISTOR

Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
Contextual Info: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches

SMD Transistors w04

Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Contextual Info: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package

AC27

Contextual Info: 551 2SC o VHF O ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR Æ f X teffl ffl o o 5s V D y N P N X t : 5 > * i / ? l ; 7 l s - t B h ÿ y 5J Z S > fè VHp Power Ampi ¡ fi er Appi i cat ion s Frequency Multipl ier Appi ¡cations • c l 175UHZ -C P 0 = 13.5W Min. )