NJ01 Search Results

NJ01

Abstract: ifn423 IFN421
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-2 F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj

Contextual Info: T-1 3 mm Auto Insertable LED Lamps HP SunPower Series HLMP-N20X HLMP-NG05 HLMP-N30X HLMP-NH01 HLMP-N40X HLMP-NJ01 HLMP-N50X HLMP-NL05 HLMP-N60X HLMP-N10X Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity

NJ01

Contextual Info: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect

Contextual Info: T-1 3 mm Auto Insertable LED Lamps SunPower Series HLMP-N20x HLMP-NG05 HLMP-N30x HLMP-NH01 HLMP-N40x HLMP-NJ01 HLMP-N50x HLMP-NL05 HLMP-N60x HLMP-N10x Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity

N305

Abstract: HLMP-N305 HLMP-N405 HLMP-NG05 HLMP-NG07 HLMP-NJ01 HLMP-NL06
Contextual Info: T-1 3 mm Auto Insertable LED Lamps HLMP-N305 HLMP-N405 HLMP-NG0x HLMP-NJ01 HLMP-NL06 Technical Data Features Description • T-1 (3 mm) Auto Insertable Package • AlInGaP SunPower Intensity • High Light Output • Tinted Diffused and Tinted Non-diffused Lens Options

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

Contextual Info: 9 -9 7 D 3 ^ ^ _ ^ ^ ^ A D 1 i PAD2J>AD5 LOW LEAKAGE PICO-AMP D IO DE HIGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current Storage Temperature Range Lead Temperature PAD1 At 25°C free air temperature: Min

Contextual Info: 9 -9 7 D 2 DPAD1, DPAD2, PPAD5, DPAD10 DUAL PICO-AMP DIODE • H IGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25‘ C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1 At 25°C free air temperature: Min Electrical Characteristics

TP4119

Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*

ij9 cc

Contextual Info: 6MBI20L-060 2 oa g ± /< 7 I^ H T M 'ii : Outline Drawings IG B T ^ i- J U IGBT MODULE 16 : Features • 17 7.5 7 7 7 7 7 16.5 3.5 High Speed Switching • ifeSSiOflE Low Saturation Voltage • S A * ^ — Hfttfc(MOS-y— hlfliit) •t iia — I I Tü I îê w c

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

PJ32

Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max

DIODE DATABOOK

Abstract: DPAD10 surface mount pico-amp diode
Contextual Info: Databook.fxp 1/14/99 1:34 PM Page C-2 C-2 01/99 DPAD1, DPAD2, DPAD5, DPAD10 Dual Pico-AMP Diode Absolute maximum ratings at TA = 25¡C ¥ High Impedance Protection Circuits Continuous Forward Gate Current Storage Temperature Range DPAD1 At 25°C free air temperature:

2N4117

Abstract: 2N4118 2N4119A 2N4119 2N4117A 2N4118A 2n4117 equivalent transistor 2N4119 2n4117a equivalent
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage

DPAD1A

Abstract: DPA010
Contextual Info: 8-94 D 2 DPAD1A, DPAD2, DPAD5, DPAD10 DUAL PICO-AMP D IO D E • HIGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1A At 25°C free air temperature: Reverse Current

IFN424

Abstract: IFN425 IFN426 transistor B42 electrometers
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGU E. INC *Î3 J> WÊ 05Q433Ô S E M IC O N D S / IC S O O O S b l M 3 • AL6R 93D 03614 J> 7=z.?-zSMETAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Î A = 25°C

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

IFN423

Abstract: IFN421 IFN422 electrometers electrometer
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C

surface mount pico-amp diode

Abstract: diode pico-amp DIODE DATABOOK PAD5
Contextual Info: Databook.fxp 1/14/99 1:59 PM Page C-3 C-3 01/99 PAD1, PAD2, PAD5 Low Leakage Pico-AMP Diode Absolute maximum ratings at TA = 25¡C ¥ High Impedance Protection Circuits PAD1 At 25°C free air temperature: Electrical Characteristics Min Reverse Current IR Breakdown Reverse Voltage

"voltage controlled resistor"

Abstract: VCR7N
Contextual Info: D 8 9 -9 7 VCR2N, VCR4N, VCR7N N-CH ANNEL SILICON VOLTAGE CONTROLLED RESISTOR JFET • • • • Absolute maximum ratings at TA = 25°C. SMALL SIGNAL ATTENUATORS FILTERS AMPLIFIER GAIN CONTROL OSCILLATOR AMPLITUDE CONTROL At 25°C free air temperature: Gate Source Breakdown Voltage

pj211

Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
Contextual Info: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG

VCR7N

Contextual Info: D8 9-9 7 VCR2N , VCR4N, V C R 7 N N-CHANNEL SILICON VOLTAGE CONTROLLED RESISTOR JFET • • • • A b so lu te m axim u m r a tin g s at TA = 25°C. SMALL SIGNAL ATTENUATORS FILTERS AMPLIFIER GAIN CONTROL OSCILLATOR AMPLITUDE CONTROL At 25°C free air temperature: