TA17412 Search Results

IRFF230

Abstract: TB334
Contextual Info: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

TA17412

Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Contextual Info: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF232

Abstract: IRF230 IRF231 IRF233 TB334
Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf230

Abstract: IRF2301 irf232
Contextual Info: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

BUZ32

Abstract: TB334
Contextual Info: BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ32) field effect transistor designed for applications such as

irf630

Abstract: rf1s630sm9a IRF630 Fairchild
Contextual Info: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power

IRF632 datasheet

Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Contextual Info: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRFF230, IRFF231, IRFF232, IRFF233 S E M I C O N D U C T O R 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: H A R R IRFF230, IRFF231, IRFF232, IRFF233 S s e m i c o n d u c t o r 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

TA17412

Contextual Info: h a r r is IRFF230, IRFF231, IRFF232, IRFF233 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150 V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

55A200V

Abstract: IRFF230 TB334
Contextual Info: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF231

Abstract: irf233 irf230 irf232
Contextual Info: IRF230, IRF231, IRF232, IRF233 HARRIS S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power