TA17442 Search Results

IRFF210

Abstract: TB334
Contextual Info: IRFF210 Data Sheet March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.2A, 200V Formerly developmental type TA17442. Ordering Information PACKAGE 1887.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFD210

Abstract: TB334
Contextual Info: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFD210

Contextual Info: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

intersil irf610

Abstract: IRF610 TB334 power MOSFET IRF610
Contextual Info: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF610

Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
Contextual Info: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF610

Abstract: TB334 power MOSFET IRF610 IRF61
Contextual Info: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Contextual Info: IRFD210 Semiconductor Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1-500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TA17442

Abstract: TA-1744
Contextual Info: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate

Contextual Info: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf610 mosfet

Abstract: IRF610 power MOSFET IRF610 4V801
Contextual Info: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TB334

Abstract: IRFD210 IRFD211 IRFD212 IRFD213 rfd2
Contextual Info: i H A R R IRFD210, IRFD211, IRFD212, IRFD213 i s s e m i c o n d u c t o r 0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.6A and 0.45A, 150V and 200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

qk1 motor

Abstract: 1RF610 irf611 RF612 IRF612
Contextual Info: HARRIS I R F 6 1 , I R F 6 1 , 1 S E M I C O N D U C T O R I R F 6 1 2 , I R F 6 1 3 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6 A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate

IRFF210

Abstract: TB334
Contextual Info: IRFF210 Data Sheet January 2002 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.2A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: w vys S IRFF210, IRFF211, IRFF212, IRFF213 S e m ico n d ucto r y 7 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: IRFF210 Data Sheet Title FF 0 bt 2A, 0V, 00 m, March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF610, IRF611, IRF612, IRF613 HARRIS S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Description Features 2.6A and 3.3A, 150V and 200V High Input Impedance These are N-Channel enhancement mode silicon gate