IRFF9120
Abstract: No abstract text available
Text: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.
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IRFF9120
TA17501.
IRFF9120
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IF9120
Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model
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IRFU9120,
IRFR9120
O-251AA
IRFU9120
IRFR9120
235e-12
1e-30
01e-3
05e-6)
IF9120
IRFR91209A
kp158
623E3
4411E
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IF9120
Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field
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IRFR9120,
IRFU9120
TA17501.
IF9120
TA17501
IRFR9120
IRFR91209A
IRFU9120
TB334
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MOSFET IRFd9120
Abstract: IRFD9120 IRFD9120 mosfet
Text: IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD9120
MOSFET IRFd9120
IRFD9120
IRFD9120 mosfet
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IF9120
Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are
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IRFR9120,
IRFU9120
TA17501.
IF9120
IRFR9120
irfu9120
IRFR91209A
TB334
4411E
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IRFD9120
Abstract: MOSFET IRFd9120
Text: IRFD9120 Data Sheet January 2002 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD9120
TA17501.
IRFD9120
MOSFET IRFd9120
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Untitled
Abstract: No abstract text available
Text: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,
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IRFF9120
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IRFD9120
Abstract: No abstract text available
Text: IRFD9120 Data Sheet Title FD 20 bt A, 0V, 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD9120
TA17501.
IRFD9120
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4411E
Abstract: IF9120
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are
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IRFR9120,
IRFU9120
TA17501.
4411E
IF9120
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IRF9520
Abstract: No abstract text available
Text: IRF9520 Data Sheet Title F95 bt ,0V, 00 m, an- 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRF9520
TA17501.
IRF9520
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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irf9520 p channel
Abstract: IRF9520
Text: IRF9520 Data Sheet July 1999 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET • 6A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
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IRF9520
TA17501.
O-220AB
irf9520 p channel
IRF9520
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IRFF9120
Abstract: No abstract text available
Text: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,
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IRFF9120
TA17501.
O-205AF
IRFF9120
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irf9520
Abstract: IRF9520 equivalent
Text: IRF9520 Data Sheet January 2002 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET Features • 6A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRF9520
TA17501.
irf9520
IRF9520 equivalent
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IF9120
Abstract: No abstract text available
Text: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
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IRFR9120,
IRFU9120
600S2
84e-4
83e-6)
235e-12
1e-30
01e-3
05e-6)
IF9120
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Untitled
Abstract: No abstract text available
Text: IRF9520 S e m iconductor April 1999 Data Sheet -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are PChannel enhancement mode silicon gate power field effect
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IRF9520
-100V,
O-220AB
-100V
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IRFR9120
Abstract: p-channel pspice model IF9120 TA17501 123E5
Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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IRFR9120
IRFU9120
IRFR9120
1e-30
05e-6)
23o-3
23e-5)
05e-3
35e-5)
p-channel pspice model
IF9120
TA17501
123E5
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Untitled
Abstract: No abstract text available
Text: IRFF9120 Semiconductor Data Sheet June 1999 4A, 100 V, 0.60 Ohm, P-Channel Power MOSFET • 4 A ,1 0 0 V • r DS ON = 0 .6 0 ß • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF9120
TA17501.
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if9120
Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 623E3 irfr9120 harris
Text: I R Semiconductor F I R R F 9 U 1 9 2 1 2 , 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 5.6A, 100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
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IRFR9120,
IRFU9120
600S2
TB334
IRFR9120
O-252AA
IF9120
IRFU9120
O-251
if9120
TA17501
IRFR91209A
TB334
623E3
irfr9120 harris
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