TA49339 Search Results

TA49372

Abstract: 20N60A4 equivalent
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

HGTG20N60A4D

Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

20N60A4

Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

20N60A4D

Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

20N60A4

Abstract: 20N60A4 equivalent TA49339
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

20N60A4

Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

20n60a4d

Abstract: HGTG20N60A4D TA49372
Contextual Info: HGTG20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

20N60A4 equivalent

Contextual Info: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high

Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

20N60A4D

Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
Contextual Info: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

20N60A4

Abstract: 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications

20N60A4D

Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339
Contextual Info: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

20N60A4

Abstract: 20N60A4 equivalent HGTP20N60A4 HGTG20N60A4 HGTG20N60A4D TA49339 TA49372 TB334 IGBT 20n60a4
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have