30N60A4
Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
Contextual Info: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4
30N60A4D
HGTG*N60A4D
30n60
hgtp30n60a4
TA49373
30N60A
HGTP30N60A4D
TA49345
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30n60a4d
Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
Contextual Info: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30N60A4
TA49373
hgtp30n60a4
TA49343
LD26
TA49345
HGTG*N60A4D
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G30N60A4
Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
Contextual Info: HGTG30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high
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HGTG30N60A4
HGTG30N60A4
TA49343.
O-247
G30N60A4
G30N60A4
IGBT G30N60A4
g30n60a
smart ups 750 circuit
g30n60
247A03
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30N60A4D
Contextual Info: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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Original
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
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PDF
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30N60A4D
Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
Contextual Info: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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Original
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
ICE 280
TA49343
30N60A
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G30N60A4
Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
Contextual Info: i n t e HGTG30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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OCR Scan
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HGTG30N60A4
HGTG30N60A4
TA49343.
O-247
G30N60A4
G30N60A4
G30N60A
TIL-220
IGBT G30N60A4
TA49343
G30N60A4 transistor
G30N60
TA49373
transistor bipolar collector current 1mA
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g30n60a4
Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
Contextual Info: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
g30n60a
IGBT G30N60A4
TA49343
G30N60A4 transistor
g30n60
12V 30A diode
TA49373
ICE 280
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PDF
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G30N60A4
Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
Contextual Info: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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Original
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60A4
G30N60A
G30N60
IGBT G30N60A4
TA49343
TA49373
G30N60A4 transistor
LD26
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PDF
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g30n60a4
Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
Contextual Info: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
IGBT G30N60A4
G30N60A
TA49343
G30N60A4 transistor
LD26
TA49373
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PDF
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G30N60a4
Abstract: G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTG30N60A4 HGTP30N60A4D ICE 280 TA49373
Contextual Info: HGTG30N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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Original
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60a4
G30N60A
IGBT G30N60A4
G30N60
TA49343
G30N60A4 transistor
HGTP30N60A4D
ICE 280
TA49373
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PDF
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30N60A4D
Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Contextual Info: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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OCR Scan
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HGTG30N60A4D
HGTG30N60A4D
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
TA49343
hgtp30n60a4d
TIL-220
HGTG*N60A4D
la 4830 ic
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G30N60A4
Abstract: hgtp30n60a4
Contextual Info: HGTG30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high
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Original
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HGTG30N60A4
HGTG30N60A4
TA49343.
G30N60A4
hgtp30n60a4
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30n60a4d
Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
Contextual Info: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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Original
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30n60a4
TA49373
HGTG*N60A4D
LD26
TA49343
TA49345
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PDF
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g30n60a4
Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
g30n60
IGBT G30N60A4
G30N60A4 transistor
G30N60A
LD26
TA49343
TA49373
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G30N60A4
Abstract: HGTG30N60A4
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60A4
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