TA940 Search Results

TA9401

Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10
Contextual Info: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V

RCA 467

Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
Contextual Info: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •

TA9401

Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
Contextual Info: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors

RFP6P10

Abstract: 37149 RFM6P08 RFM6P10 RFP6P08 MCI 1496 P 2C3370
Contextual Info: E SOLID STATE D T | 3a7SDfll 0Dlfl2aS 0 H Ì ¿töS5081 G E S O L I D S T A T E 0 1E 18225 Standard Power MOSFETs _ RFM6P08, RFM6P10, RFP6P08, RFP6P10 D T -39-^i File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 6 A, 80 V — 100 V

Contextual Info: S D A -B 7 2 18- 12 S872I8I2 RECOMMENDED PC BOARD LAYO U T 2 .9 6 0.117 1.20 *0.08 0 .0 4 7 ±0.003 FOR PEG ONLY OPTION SCALE 4:1 PEG D ETA IL "A" N O TES I. : M A T E R IA L HO U SIN G : - NYLON TE R M IN A L A 3. - 66 THERM O C A R T R ID G E P L A T IN G

TA940

Abstract: CKT84 ML marking 9S02
Contextual Info: 18-06*» NOTES : ENG. NO SD A-872 I. MATERIAL : HOUSING - N Y LO N 6 6 THERMO P L A S T I C , 9 4 V - 0 TERM INAL - CARTRIDGE BRASS P L A T I N G - P R E - P L A T E D TIN A L L O Y \ ^ 7 M A R K " P 8 . P 9 1 ON B A C K W A L L .T O ^ T H E A. PART BE A S L A R G E A S P O S S I B L E

Contextual Info: LO O NOTES : I. < o MATERIAL : HOUSING - NYLON 66 THERMO PLASTIC, 94V-0 TERMINAL - CARTRIDGE BRASS PLATING - PRE-PLATED TIN ALLOY T^7MARK "P8.P91 ON BACKWALL.TO BE AS LARGE AS POSSIBLE T^7THE VOID OPTION IS FOR THE POLARIZATION KEY A. PART NO. LEGEND : 87218 - 0 6 * *

RFM10P12

Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
Contextual Info: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode

74ti

Abstract: 68CKT
Contextual Info: I.40±.05 l.2T±.05 68TH CIRCUIT r 35TH CIRCUIT­ ILO *.05 NOTES 1 MATERIAL HOUSING:HIGH TEMP. PLASTIC. WHITE PIN ; COPPER ALLOY 2 ) PLATING CONTACT AREA:5ELECTIVE GOLD.THICKNESS=0.1 MICROMETER MIN. OVER PALLADIUM-NICKEL SOLDER TAIL AREA: TIN-LEAD, THICKNESS^ 1.0 MICROMETER MIN.

RFM10P12

Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
Contextual Info: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

an7254

Abstract: RFL1P10 RFL1P08
Contextual Info: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: CKT SIZE DIM A DIM A 9 DIM C * 4 -4 0 FLUSH INSERT DIM D 15 2.77 TYP .109 37 6.96 .436 .274 24.66 19.38 6.97 .274 .984 39.14 33.32 1.312 .971 .763 53.04 47.04 38.38 33.22 6.91 2.088 1.852 1.5 11 1.308 .272 69.32 63.50 54.84 49.83 6.84 2.729 2.500 2.159 1.962

Contextual Info: RFL1P08, RFL1P10 HARRIS S E M I C O N D U C T O R 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: -F IR S T C IR C U IT ^ 34TH NOTES C IR C U IT l.4 0 ± .0 5 1 M A T E R I A L H O U S IN G ; H IG H P IN T E M P . P L A S T I C , W H IT E ; CO PPER ALLO Y 2 ) P L A T IN G C O N TA CT A R E A :S E L E C T IV E O VER P A L L A D IU M -N IC K E L SOLD ER

Contextual Info: MATERIAL 8 HOUSING - PPS.U L 94V-0 . COLOR : BROWN TERMINAL - PHOSPHOR BRONZE. FINISH - GOLD FLASH IN CONTACT AREA. I.52um/60uln MIN. TIN IN SOLOER TAIL, BOTH OVER 0.76um/ 30uln MIN. NICKEL OVERALL. 1 - 0.25um /l0uln MIN. GOLD IN CONTACT AREA, l.52um/60uln M[N. TIN IN SOLDER TAIL. BOTH OVER

Contextual Info: 3 .0 5 Ü . 0 0 8 4.45 .175 J riiriinnnnnnnnrii riin □□□□□□□□□□□ nrii ri Ì u iiu u u u u u it it h Y 'l UU 1if f f n n n n n n n n r f 1 U l's[r: Ulll 1H s ^=g^L WITH TWO END CUT r 55.8 8 2 .2 0 0 itiitinnnnnnnrüFT itin— - 50 8 .35

Contextual Info: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such