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    TAA 293 A Search Results

    TAA 293 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R7F7010293AFP Renesas Electronics Corporation High-end In-vehicle Microcomputers for Body Applications Visit Renesas Electronics Corporation
    2SK1293-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    CAD06W1293A Amphenol Communications Solutions Smart Card connector, Reel Packaging, 6 Positions. Visit Amphenol Communications Solutions
    LM293ADGKR Texas Instruments Dual Differential Comparator 8-VSSOP -25 to 85 Visit Texas Instruments Buy
    LM293ADGKRG4 Texas Instruments Dual Differential Comparator 8-VSSOP -25 to 85 Visit Texas Instruments Buy

    TAA 293 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2103  131,072 x 18/262,144 x 9 IDT72V2113  262,144 x 18/524,288 x 9


    Original     		PDF IDT72V2103 IDT72V2113 IDT72V255LA/72V265LA IDT72V275/72V285 drw37

    IDT72V2103

    Abstract: IDT72V2113 BC100-1
    Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2103 ⎯ 131,072 x 18/262,144 x 9 IDT72V2113 ⎯ 262,144 x 18/524,288 x 9


    Original     		PDF IDT72V2103 IDT72V2113 IDT72V255LA/72V265LA IDT72V275/72V285 IDT72V2103 IDT72V2113 BC100-1

    72V273

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 IDT72V223, IDT72V233 IDT72V243, IDT72V253 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 IDT72V263, IDT72V273 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9 IDT72V283, IDT72V293


    Original     		PDF IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 IDT72V223 72V273

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9


    Original     		PDF IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 IDT72V223

    IDT72V223

    Abstract: IDT72V233 IDT72V243 IDT72V253 IDT72V263 IDT72V273 IDT72V283 IDT72V293 72V273
    Text: PRELIMINARY 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9


    Original     		PDF IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 IDT72V223 IDT72V223 IDT72V233 IDT72V243 IDT72V253 IDT72V263 IDT72V273 IDT72V283 IDT72V293 72V273

    colour tv circuit diagram

    Abstract: colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit
    Text: TAA 630S LINEAR INTEGRATED CIRCUIT SYNCHRONOUS DEMODULATOR FOR PAL COLOUR TV SETS The TAA 630 S is a silico n m on olithic integrated c irc u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: — active synchronous dem odulators fo r F B-Y and ± F (R-Y) signals


    OCR Scan     		PDF 16-lead colour tv circuit diagram colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit

    Untitled

    Abstract: No abstract text available
    Text: a CD © rs— LD 3 -3 C JE A TERMINAL ' 0.8 ID CM (tAA) LD 6 A D tE NOTES I. (iESTWMATERIAL I lOvIvST : E P S . U L 9 4 V - 0 3 - 2.CJL I UyW M ( t = 0 . 3 2 ) A 'ZT I i lt 2.4 3 ,.3,X7'7 =L I UCraiN ( t = 0 . 2 ) >20+ I §§3 'T'+ 3.75 0.4 E (PITCH)


    OCR Scan     		PDF UL94V-0 SD-52557-009

    Untitled

    Abstract: No abstract text available
    Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CM O S): 100 mA (Max.) Operating KM68V257C-15 : 90 mA (Max.)


    OCR Scan     		PDF KM68V257C 32Kx8 KM68V257C-15 KM68V257C-17 KM68V257C-20: KM68V257CP 28-DIP-300 KM68V257CJ 28-SOJ-300 KM68V257CTG

    514402A

    Abstract: 26-PIN ZIP20-P-400-W1 5V110 5424G
    Text: O K I S em iconductor M SM 514402A /A L_ 1,048,576-Word x 4-B it DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514402A/AL_ 576-Word MSM514402A/AL cycles/16ms, cycles/128ms MSM514402A/AL b7SM24D 514402A 26-PIN ZIP20-P-400-W1 5V110 5424G

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM641003 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003 uses four common input and output lines and has an output enable pin which operates


    OCR Scan     		PDF KM641003 KM641003 576-bit 32-pin

    KM641003J-15

    Abstract: KM641003J-20
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)


    OCR Scan     		PDF KM641003 KM641003J-15 KM641003J-17 KM641003J-20: KM641003J 32-SOJ-4CK) KM641003 576-bit KM641003J-15 KM641003J-20

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan     		PDF KM23C8100AFP2 KM23C8100AFP2 150ns KM23C8100AFP2)

    RA5B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS


    OCR Scan     		PDF KMM332V803AS-L KMM332V803AS-L KMM332V803A 32-pin 72-pin KMM332V803AS-L6/L7 cycles/128ms 60/70ns) RA5B

    44C160

    Abstract: No abstract text available
    Text: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,


    OCR Scan     		PDF KM44C16004A, KM44C16104A 16Mx4 44C160

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532256 Series SEMICONDUCTOR 256KX 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532256 is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532256 256KX 32-bit HY534256 22/iF HYM532256M HYM532256MG 1CA01-20-MAY93

    ca5J

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTION FEATURES The Sam sung KM M 332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM332V803AS-L KMM332V803AS-L 8Mx32 KMM332V803A 32-pin 72-pin KMM332V803AS-L6/L7 cycles/128ms ca5J

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SQJ-300 KM64B261A 144-bit 200mV

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY53C256 Series SEMICONDUCTOR 256K X 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynam ic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C256 300mil 330mil 01-20-APR93 4b75DBB 0DD131S

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536A410A 36-bit HYM536A41OA HY5117400A HYM536A41OAM/ASLM HYM536A410AMG/ASLMG E17-10-AUG95 0005b42

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for


    OCR Scan     		PDF HYM540A400 40-blt HY5116400 HYM540A400M/LM/TM/LTM HYM540A400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG 1CE08-01-FEB94

    A16Q2

    Abstract: No abstract text available
    Text: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM


    OCR Scan     		PDF 131072-word 10OTM 58110OTM 58110OYM XK581100TM 581100YM CXK581 10OTM TSQPO32-P-O02O-A 10OYM A16Q2

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe


    OCR Scan     		PDF MB81CWOOA-70L/-80L/-10L MB81C1000A 26-lead MB81C1000A-70L MB81C1000A-80L MB81C1000A-10L

    Untitled

    Abstract: No abstract text available
    Text: ^E D I _ EDI81256C Electronic Designs Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The ED181256C is a 262,144 bit high performance, tow 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1.


    OCR Scan     		PDF EDI81256C 256Kx1 ED181256C 256Kx1. EDI81256C EDI81256LP, EDI81256C55LB EDI81256C35FB EDI81256C45FB

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV