EDI88128CS
Abstract: No abstract text available
Text: EDI81256C HI-RELIABILITY PRODUCT 256Kx1 High Speed Monolithic SRAM CMOS FEATURES • 128Kx8 bit CMOS Static The EDI88128CS is a high speed, high performance, megabit density Monolithic CMOS Static RAM organized as 128Kx8. ■ Random Access Memory • Fast Access Times of 35, 45, 55ns
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EDI81256C
256Kx1
128Kx8
EDI88128CS
128Kx8.
128Kx8
MIL-STD-883
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EDI81256C35QI
Abstract: No abstract text available
Text: EDI81256C 256Kx1 Static Ram 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks or refreshing for operation.
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
01581USA
EDI81256C35QI
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Untitled
Abstract: No abstract text available
Text: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip
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EDI8M16256C
256Kx16
EDI8M16256C
4096K
256Kx16bit)
EDI81256C
256Kx1)
EDI816H64C
1024K
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256kx1
Abstract: EDI81256C45QB EDI81256C45LB EDI81256C55QB EDI81256C
Text: ^EDI _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
Q-74Q
EDI81256C45QB
EDI81256C45LB
EDI81256C55QB
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EDI81256C35QM
Abstract: No abstract text available
Text: moi, E D Ì8 1 2 5 6 C 256Kx1 Static Ram ELÉCTRONC DOfâNS. HG 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory
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256Kx1
EDI81256C
256Kx1.
EDI81256LP
MIL-PRF38535.
EDI812S6C
EDI81256C35QM
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI81256CA/LPA/PA Electronic D« cign i Inc. High Speed 256K Monolithic SRAM G ^ ilO iO lM O T 256Kx1 Static RAM CATOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per formance, low power CMOS Static RAM organized as 256Kx1.
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EDI81256CA/LPA/PA
256Kx1
EDI81256CA/LPA/PA
256Kx1.
ED181256CA
EDI81256CA
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D313E
Abstract: 316A103 D313-E spf 316 EDI81256C45QB EDI81256C-35 EDI81256C35QB EDI81256C55QB
Text: ELECTRONIC DESIGNS INC ^ E D SIE D • 3230114 OOOlllL 271 M E L D I E D I8 1 2 5 6 C B*cfronic D«*ignt Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic T -H G -Z 3 -0 5 Features The EDI81256C is a 262,144 bit high performance, low
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
T-HG-Z3-05
323VDD-o
EDI81256C35QB
D313E
316A103
D313-E
spf 316
EDI81256C45QB
EDI81256C-35
EDI81256C55QB
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Untitled
Abstract: No abstract text available
Text: EDI81256C/P35/45/55 W D\ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It is available in Standard C and Low Power (P) versions.
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EDI81256C/P35/45/55
256Kx1
EDI81256C/P
256Kx1.
MILSTD-883C,
EDI81256P
Pin45/5S
EDI81256P
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D010
Abstract: TDQ10 256KX16
Text: EDI8M16256C 35/45/55/70 _ Module m o \ The fu tu re. . . A P V A N G E ONFORMATIIOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadiess chip
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EDI8M16256C
256Kx16
EDI8M16256C
4096K
256Kx16bit)
EDI81256C
256Kx1)
EDI816H64C
1024K
D010
TDQ10
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256Kx1 bit
Abstract: No abstract text available
Text: moi _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
EDI81256LP45QB
EDI81256LP55QB
256Kx1 bit
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Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI81256C Electronic Designs Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The ED181256C is a 262,144 bit high performance, tow 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1.
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EDI81256C
256Kx1
ED181256C
256Kx1.
EDI81256C
EDI81256LP,
EDI81256C55LB
EDI81256C35FB
EDI81256C45FB
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Untitled
Abstract: No abstract text available
Text: WD\ EDI81256C 256Kx1 Static Ram ELECTRONIC DESIGNS, INC. 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory Fully asynchronous, the EDI81256C requires no clocks or
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EDI81256C
256Kx1
EDI81256C
256Kx1.
I81256LP
7/96ECO
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p3545
Abstract: No abstract text available
Text: EDI81256C/P35/45/55 m o \ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It 256Kx1 bit CMOS Static Random Access Memory
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EDI81256C/P35/45/55
256Kx1
EDI81256C/P
256Kx1.
MIL-STD-883C,
EDI81256PATA
181256C/P35/45/5S
EDI81256P
p3545
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army
Abstract: GNS 3011 T1IS EDI81256CA
Text: ELECTRONIC DESIGNS INC 30E D m 3230114 00005=11 S • m D i EDI81256CA/LPA/PA H » c t r « ilo O n l g n i In o . i High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per formance, low power CMOS Static RAM organized as
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EDI81256CA/LPA/PA
EDI81256CA/LPA/PA
256Kx1.
MIL-STD-883,
T-46-23-05
army
GNS 3011
T1IS
EDI81256CA
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Untitled
Abstract: No abstract text available
Text: 23EDI L Electronic D *lg n * EDI81256C/LP/P High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/LP/P is a 262,144bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, 1he EDI81256C/LP/P requires no
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23EDI
EDI81256C/LP/P
256Kx1
EDI81256C/LP/P
144bit
256Kx1.
MIL-STD-883,
EDI81256C
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A14-A6
Abstract: No abstract text available
Text: ELECTRONIC D E S I G N S INC 3QE D • 323G114 OQQQSÖS T ■ EDI81256C/LP/P _ ß«olronle Dtilgnt Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS High Speed Monolithic , Features The EDI81256C/LP/P is a262,144bithighperformance, low power CMOS Static RAM organized as 256Kx1.
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323G114
EDI81256C/LP/P
256Kx1
EDI81256C/LP/P
144bithigh
256Kx1.
MIL-STD-883,
EDI81256CA
A14-A6
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI81256C Electronic D tilg n i Ine« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power C M O S Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks
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EDI81256C
256Kx1
EDI81256C
256Kx1.
EDI81256LP,
MIL-STD-883,
EDI81256C35QB
EDI81256C45QB
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edi8832
Abstract: EDI8834
Text: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead ing international supplierof high-performance, high-reliability Static RAM products to all seg
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EDI8M8512L
Abstract: No abstract text available
Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28
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EDH816H64CX2
EDI88128PXXNM
EDI88130CSXXNB
188130LPSXXNB
EDI88130PSXXNB
188128CXXLB
EDI88128CXXLM
EDI88128LPXXLB
EDI88128LPXXLM
EDI88128PXXLB
EDI8M8512L
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dram zip 256kx16
Abstract: I8833C
Text: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2
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256Kx4 SRAM
Abstract: 256Kx4 EDI8M4257C
Text: EDI8M4257C m 35/ 45/55 Module o \ The fu tu r e . . . today, i 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/output lines. The module is constructed of four
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EDI8M4257C
256Kx4
EDI8M4257C
256Kx4-bit)
256Kx1
EDI81256C
MIL-STD-883
1600mW
256Kx4 SRAM
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.
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6Y440
OBK02
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64kx4 DRAM
Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static
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EDI8833C/LP/P
32Kx8
EDI8833C/LP/P
144bit
32Kx8.
MIL-STD-883,
64Kx4
EDI8466CB.
256Kx1
EDI81256C/LP/P.
64kx4 DRAM
SRAM 6T
PS-136
4Kx1 DRAM
EDI8F8512LP MILITARY
4Kx1 SRAM
5962-89598
EDI8833LP
32kx8 bit low power cmos sram
edi84256
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24PIN
Abstract: CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001
Text: - 106 2 5 6 K m t, tt £ ïSKiÊSl CC X TAAC max ns) TCAC max (ns) CMOS 4 7 TOE max (ns) TOH (ns) / f TOD max (ns) S t a t i c RAM (2 6 2 14 4 x 1 ) 7' i l t t TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) ma ÏÏI3X (ns i V D D or V C C (V) 2 4 P I N
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24PIN
CY7B193-12
CY7B193-15
CY7B193-20
CY7B197-5
HM6207HP-35
HM0207HP-45
HM6707JP-20
HM6707
JP-25
CY7B197-12
CY7B197-15
CY7B197-20
EDI81256C-35
24PIN 1800
Hitachi Scans-001
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