TAA 436 Search Results

Contextual Info: ta0 E J> • aS3Sb05 D D M ^ ci37 ST1 « S I E G SIEMENS SIEMENS AKTIEN GESELLSCH AF T - 'f H Æ - i o Single Operational Amplifiers TAA 762 TAA 765 Features Bipolar 1C • W ide common-mode range • Large supply voltage range • Large control range • W ide temperature range TAA 762

Contextual Info: CY7C1061AV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max)

R5C833

Abstract: pinout dell battery BCM5880 schematic lcd inverter dell SLG8LP554VTR SLG8LP554 schematic diagram lcd monitor dell camera pinout JAL10 broadcom BCM5880
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL10 PCB NO : LA4151P DAA00000Q1L BOM P/N : 1 M09 Lola UMA uFCBGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-07-4 REV : 1.0 @ : Nopop Component 1@ : Use TCM only 2@ : Use TAA only 3@ : Use BROADCOM TPM only

TCA 430

Abstract: 431lg
Contextual Info: LG Semicon 1M/4M Base FPM Timing Timing Waveforms -1 tRC ÌRAS ÎRP \ RAS .2 ÌRCD tRSH tCAS tT CAS 7 •<L tRAJL tRAD tASR ADDRESS \ tcRP tcSH U se. tRAH ROW t e AH. COLUMN , tRRH , t»CH tRCS WE tCAC tAA tRAC tOFF Doirr /< -^ D our y ■'v_ ?

IBM0164165B4M

Abstract: IBM0164165P4M TSOP-54
Contextual Info: IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:

J031

Contextual Info: i 6 5 9 I £ 0 PS ’O N %-ñ W ï ïB FJfcl kf t] RE V. 0NIMVHQ DATE DON M. F*J S & NO. m DESCRIPTION 2 9. F e b . 1999 43609 REV I SED 3 16.J a n . 2004 054028 DELETE COLOR DIMENSION * fi É CHK. DR. H.SAKURADA K.HASEBE H.SAKURADA K.HASEBE & r W> A PPD.

V53C365805A

Abstract: WL12
Contextual Info: MOSEL VITELIC V53C365805A 3.3 VOLT 8M X 8 EDO PAGE MODE CMOS DYNAMIC RAM V53C365805A 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

Contextual Info: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm

Contextual Info: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS

8m x 36

Contextual Info: Discontinued 7/00 - last order; 9/00 - last ship IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480BG IBM11E8480BG 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

Contextual Info: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480BG IBM11E4480BG 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

8m x 36

Contextual Info: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm

SA14-4328-01

Contextual Info: IBM11D2480BA2M x 36 EOS10/10, 5.0V, Sn/Pb. IBM11E2480BA2M x 36 EOS10/10, 5.0V, Au. IBM11D2480B IBM11E2480B 2M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm

Contextual Info: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm

Contextual Info: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

Contextual Info: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490B IBM11D4490B IBM11E8490B IBM11D8490B 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:

66 1104

Contextual Info: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line

Contextual Info: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.

Contextual Info: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

Contextual Info: ÂS7CÏ64 AS7 C IÇ 4L CMOS SHAM 1F E A T U R E S • Organization: 8,192 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times • Automatic power-down when de-selected • For high density, a slim 300 mil. 28-pin package

AT75C310

Abstract: AT75C310-Q160 PQFP160
Contextual Info: Features ARM7TDMI ARM Thumb® Processor Core Two 16-bit Fixed-point OakDSPCore® Cores 256 x 32-bit Boot ROM 88K Bytes of Integrated Fast RAM for Each DSP Flexible External Bus Interface with Programmable Chip Selects Dual Codec Interface Multi-level Priority, Individually Maskable, Vectored Interrupt Controller

I1244

Abstract: D42S18165 LH 446
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page

RAS 05

Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
Contextual Info: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )