TAA 621 Search Results

Contextual Info: CY62128 PRELIM INARY 128K x 8 Static RAM Features feature that reduces power consumption by more than 75% when deselected. • tAA = 70 ns • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable one JEt and write enable (WE) inputs LOW and chip enable

TBA 325 b

Abstract: 14SE 14-SV 12sV TBA 315
Contextual Info: 製品ガイド ◆梱包仕様 ボ ッ ク ス 方 式 B 梱包方法 寸法図 H W 適用仕様 寸 法 W H B TFA TBA （T15、 T25） 5V、7V、9V、9H 325±5 47±3 280±10 TEA、 TFA、 TAA、 TBA （T1、 T15、 T2、 T25） 10V、 12V、 14V、

CYS2128-55

Abstract: CYS2128
Contextual Info: p yp: v « * 1 i. X CY62128 - 128K x 8 Static RAM fe a tu re th a t reduces pow er con sum p tion by m ore than 75% w h en deselected. Features • tAA = 70 ns • C M O S for o p t i m u m s p e e d / p o w e r W riting to the device is acco m p lished b y taking chip enable

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

TAA 621

Abstract: hidden refresh
Contextual Info: ¡ Semiconductor ADDENDUM P ¡ Semiconductor ADDENDUM P E2G0103-17-41 ࣾࣽࣾࣾ ࣽ, , ࣽࣽ ऄँं ँँ ऀऀ ऄऄࣿࣿ ःः ࣿःः ࣿंः,ࣿ ं ँ ऀऀ ऄ ँऀऀ ࣾࣾࣾ ࣽࣽࣽ ࣿऀ, ँँ ࣿࣿ ࣿ DRAM AC Timing Waveforms

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

CY62148

Abstract: CY62148-70SI CY62148L-70SI
Contextual Info: fax id: 1079 1CY 621 48 CY62148 PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max.

62128

Abstract: CY62128-70ZC RAM 62128 CY62128 CY62128L-70SC TAA 621
Contextual Info: fax id: 1072 1CY 621 28 CY62128 PRELIMINARY 128K x 8 Static RAM Features • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 330 mW (max.) (60 mA) • Low standby power (70 ns, LL version) — 110 µW (max.) (20 µA)

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

AS7C512-20JC

Abstract: AS7C512 AS7C512-15pc transistor sb 772 AS7C512-12JC AS7C512L-20JC ES 95 SB Plastic 32-pin 300 mil SOIC 7C256 AS7C512-12PC
Contextual Info: High Performance 64Kx8 CMOS SRAM AS7C512 AS7C512L 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • High speed - 12/15/20/25/35 ns address access time - 3/4/5/6/8 ns output enable access time • Low power consumption - Active: 688 mW max 12 ns cycle

7C34098-20

Abstract: AS7C34098 AS7C4098
Contextual Info: High Performance 256Kx16 CMOS SRAM AS7C4098 AS7C34098 256K×16 CMOS SRAM Preliminary information Features • Organization: 262,144 words × 16 bits • High speed - 15/20/25/35 ns address access time - 8/10/12/15 ns output enable access time • Low power consumption

2M X 32 Bits 72-Pin Flash SO-DIMM

Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
Contextual Info: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194

taa 723

Abstract: concord
Contextual Info: High Performance 32Kx9 CMOS SRAM AS7C259 AS7C259L 32K×9 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 9 bits • 2.0V data retention (L version) • High speed • Equal access and cycle times – 12/15/20/25/35 ns address access time

TAA 761 A

Abstract: AS7C31024 AS7C31024-12PC
Contextual Info: High Performance 128Kx8 3.3V CMOS SRAM AS7C31024 AS7C31024L Low voltage 128K×8 CMOS SRAM Common I/O Features • Organization: 131,072 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

AS7C1024-20PC

Abstract: AS7C1024 7C256
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1024 AS7C1024L 128K×8 CMOS SRAM Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20/25/35 ns address access time - 3/3/4/5/6/8 ns output enable access time • Low power consumption - Active: 770 mW max 10 ns cycle

10v 471k tnr

Abstract: TNR 241K fowx2 TND14SV varistors 152k 61051 AC Varistor varistor 681k TBA 860 TNR 471k
Contextual Info: METAL OXIDE VARISTORS TNRTM SAFETY STANDARDS SAFETY STANDARDS for V Series ?TNR V Series / Recognized safety standards Category Name Standards FOWX2 UL1414 UL1449 3rd. 1 VZCA2 (USA) Title File No. Varistor Voltage Range Across-the-line Capacitors, Antenna-coupling and Line-bypass

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

pd424400

Abstract: d424400
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ , ü P D 4 2 4 4 0 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD424400 is a 1,048,576 words by 4 bits CMOS dynamic RAM. The fast page mode capability realizes high speed access and low power consumption.

SHINDENGEN DIODE

Contextual Info: SHINDENGEN ELECTRIC HFG SHE D • 621^307 00004^3 Ibö ■ S H E J ■ O U T L IN E D IM E N S IO N S D15XBD 600V 15A ■ R A T IN G S A b s o lu te Maximum R atin g s * l e# s Item Sym bol S to ra g e Tem perature O pe ra tin g J u n c tio n T em p e ra tu re

AS7C1028-25PC

Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Contextual Info: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption