TB1S Search Results

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

TB8S-05

Abstract: TB1S TB8S PANJIT
Contextual Info: TB1S-05~TB8S-05 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100 ~ 800 Volts CURRENT 0.5 Ampers MICRO DIP / TDI Unit：inch mm Recongnized File #E139973 FEATURES 0.028(0.7) 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

marking TA1S

Abstract: TA1S SMD TA1S SMD Transistor Marking Code F3
Contextual Info: C A L I B E R TA1S SMD , TB1S (Thru Hole) Series Lead-Free RoHS Compliant Electronics Inc. PART NUMBERING GUIDE SineWave (VC) TCXO Oscillator Revision: 1996-C TABLE 1 Operating Temperature TB1S 3 20 C V 10.000MHz Package TA1S = SMD TB1S = Thru Hole Pin One Connection

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm

Contextual Info: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~

TB8S

Contextual Info: TB1S-05~TB8S-05 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100 ~ 800 Volts CURRENT TDI MICRO DIP 0.5 Ampers Unit : inch(mm) FEATURES 0.028(0.7) 0.023(0.6) • Glass passivated chip junciton ~ • Body Thick Very Thin <1.5mm

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TB-S Package Weight mg 100 Product Group Type No. TB1S – TB10S Solder Alloy Leadframe Copper Alloy Plating Matte Tin Encapsulation Tolerance Material Doped Silicon* Die Attach

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Ultra Thin Profile Package for Space Constrained Utilization

Contextual Info: TB1S – TB10S 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features        G Ultra-Slim 1.5mm Max. Case Height Glass Passivated Die Construction High Reliability Low Forward Voltage Drop High Surge Current Capability

TB10S

Abstract: TB6S
Contextual Info: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

SMD MARKING CODE A5

Contextual Info: C A L IB E R TA1S SMD , TB1S (Thru Hole) Series E14 E L E C T R O N IC S IN C . specifications subject to change * revision 3-2003 SineWave (VC) TCXO Oscillator PART NUMBERING GUIDE TABLE 1 Operating Temperature TB1S 3 20 C V 10.000MHz Package TA1S = SMD

TB10S

Contextual Info: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop

TMPM374

Abstract: TMPM373 TMPM374FWUG LQFP-64P ADR-301 TMPM372 3shunt TMPM373FWDUG 3 phase sine wave pwm circuit LQFP48-P-0707-0
Contextual Info: 32-bit RISC Microcontroller TX03 Series TMPM372FWUG TMPM373FWDUG TMPM374FWUG Semiconductor & Storage Products Company Revision History Rev 1 Date 2011/8/1 Description First Release TMPM372 / 373 / 374 *

mitsubishi split ac

Abstract: 013A1
Contextual Info: t U de nd v e er lo pm en Preliminary Specifications REV.A Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M16C / 6NT Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6NT group of single-chip microcomputers are built using the high-performance silicon gate

TFBGA141-P-0909-0

Abstract: E80F PCST40 EJTAG 1.53 204SFC F266 TMP19A23FYXBG
Contextual Info: 32-Bit TX System RISC TX19 Family TMP19A23FYXBG/FG Rev1.2 March 10, 2008 TMP19A23 32-bit RISC RISC Microprocessor - TX19 Family TMP19A23FYFG/XBG 1. Overview and Features The TX19 family is a high-performance 32-bit RISC processor series that TOSHIBA originally

D8279

Abstract: M30840MCT M3084
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TMPM370

Abstract: TMPM370FY emg amp ARM926EJ-S LQFP100-P-1414-0 QFP100-P-1420-0 TMPM370FYFG 08s hall effect sensor TMPM370fyd
Contextual Info: 32-bit TX System RISC TX03 Series TMPM370FYDFG TMPM370FYFG Tentative Semiconductor Company Revision History Date 2009/8/4 2009/10/5 Revision Tentative 1 Tentative 2 First Release Contents Revised Under Development TMPM370 *

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M3062

Abstract: TA2140 csc 2313 m3062lfgpgp u3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

0262F8

Abstract: marking TA1S INV04 p67 marking to-252
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid