TC-L 11W Search Results

711m

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Contextual Info: SEMI-PRECISION POWER WIREWOUND LAS/AS A lla y resistance: w ire w o und lo sp ecific p a ram e ters in clu din g TC R 's fro m ±20 to •+S500 ppm /" C SERIES* A lp h a - D igital M arking S ilico n e co nfo rm a l coating All w e ld ed cap and lead assem bly

11W60C3

Contextual Info: PowerMOSFET OUTLI NE FP11W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V11A 22 管理番号 （例） Control No. 品名 Type No. 0000 11W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S

Contextual Info: PKF 5113 I DC/DC power module 12V/ 0.92A / 11W • SMD with ultra-low component height 8.0 mm 0.315 in. • 81% efficiency at full load • 1,500 Vdc isolation at full load • Switching frequency synchronization • MTBF >10 million hours at +50°C case temperature

Contextual Info: PKF 5113 I DC/DC power module 12V/ 0.92A / 11W • SMD with ultra-low component height 8.0 mm 0.315 in. • 81% efficiency at full load • 1,500 Vdc isolation at full load • Switching frequency synchronization • MTBF >10 million hours at +50°C case temperature

impatt diode

Abstract: impatt diode operation AN961 5082-0710 IMPATT
Contextual Info: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating

MIG200J201H

Abstract: TLP559
Contextual Info: TOSHIBA MIG200J201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG200J201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

TLP559

Abstract: MIG200J201H
Contextual Info: TOSHIBA MIG200J201H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG200J201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD7 0 2 0 8 H , 7 0 2 1 6 H V40HL , V50HL™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The ¿¡PD70208H V40HL is a high-speed, low-power 16-/8-bit microprocessor based on the ¿¡PD70208 (V40™) with 16-bit architecture, 8-bit data bus, and general-purpose peripheral functions.

transistor 415

Abstract: diode 500A transistor working principle STTA806D AN-603 STTA2006P transistor 600v 500a transistor 2N2
Contextual Info:  APPLICATION NOTE TURBOSWITCH TM IN A PFC BOOST CONVERTER B. Rivet 1.INTRODUCTION 2.PARAMETERS DEFINITION SGS-THOMSON offers two families of 600V ultrafast diodes TURBOSWITCH”A” and ”B” having different compromises between the forward c h a ra ct e ris t ic s a n d t h e re v e rs e re c ov ery

STTA806D

Abstract: AN603 diode 400v 2A ultrafast TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STTA2006P transistor Ip transistor working principle transistor 600v 500a 600V 20A 50KHz MOSFET
Contextual Info: AN603 APPLICATION NOTE TURBOSWITCH IN A PFC BOOST CONVERTER INTRODUCTION STMicroelectronics offers two families of 600V ultrafast diodes TURBOSWITCH"A" and "B" having different compromises between the forward characteristics and the reverse recovery characteristics.

Contextual Info: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM HITACHI Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword x 8-bit dynamic RAM and a 512-word x 8-bit SAM full-sized SAM . Its RAM and SAM operate independently and

POWER SUPPLY BTS SIEMENS

Abstract: siemens pwm 12v E3230 application note BTS
Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

11W60C3

Abstract: 11w60 s01z
Contextual Info: PowerMOSFET •外観図 FP11W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V11A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000

213H

Contextual Info: TO SHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

amd 8086

Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 88 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit

rca 3069

Abstract: Avansys Power rca power transistor 3069 astec custom power RCA 432 CISPR22 AV60A-048L-033D025 AV60A-048L-033D Common Mode Choke 1mH, 12A k 3531 transistor
Contextual Info: AV 6 0 A D u a l O u t p u t H a l f - b r i c k Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V and 3.3V/2.5V Dual Output 75W DC-DC Converter REV 01 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355

2SC1781

Abstract: t70012 2SA880 138D 2SA1123
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

lucent DC-DC POWER MODULE

Abstract: 50-150W
Contextual Info: AV 6 0 C H a l f - b r i c k S e r i e s Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 3.3V Output 50-150W DC-DC Converter Rev01 -1TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426

lucent DC-DC POWER MODULE

Contextual Info: AV 6 0 C H a l f - b r i c k S e r i e s Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V Output 50-150W DC-DC Converter Rev01 -1TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426

Contextual Info: AV 6 0 C H a l f - b r i c k S e r i e s Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 3.3V Output 50-150 Watt, DC-DC Converter -1TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com

N80C186-16

Abstract: n80c186-12 N80C186-20 N80C188-16 80C186 80C188 80C188 amd microprocessor N80C188-20 IRL PIC N80C18612
Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 8 8 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • O peration M odes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit

N80C188-20

Abstract: N80C186-16 N80C188-12 80C186 N80C188 IN80C188-20 n80c1 80*186 800188 application note 80C186 programming
Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 8 8 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • O peration M odes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit