TC249 Search Results

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

2SJ357

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d1308

Abstract: D1297 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ358

Abstract: MEI-1202
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2413

Abstract: IEI-1213 MEI-1202 MF-1134 TC-2494
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2353/2SK2354 is N -C hannel M O S Field E ffect T ra n s is ­ PACKAGE DIM EN SIO N S to r d e sig ne d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package D raw ings unit: m m T he 2S J358 is a P -channel v e rtic a l M O S FET th a t can be used as a s w itc h in g e le m e n t. The 2S J358 can be d ire c tly d riv e n by an 1C o p e ra tin g at 5 V.

2SK2412

Abstract: IEI-1213 MEI-1202 MF-1134 TC-8031
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2

2SJ358

Abstract: MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1

2SK2415

Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.

IEI-1209

Abstract: 2SK2358 2SK2357
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transis- PACKAGE DIMENSIONS in millimeters tor designed for high voltage switching applications.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TC-2419

Abstract: TC-527 TC-447 TC-527HB LB 2 resin compound TC-564-1 Tc 521 A latex TC530
Contextual Info: Techform Products E L E C T R O N I C S, I N C. Temporary Solder Masks and Adhesives are now available through Kester's Techform line. The solder masks are applied to printed circuit boards to prevent solder from flowing onto edge connectors, gold fingers, or empty through-holes. The adhesives are designed to form a bond that will maintain

Transistor D 2494

Abstract: 2SK2413 IEI-1213 MEI-1202 MF-1134 TC-8032
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- in millimeter signed for high speed switching applications. FEATURES • Low On-Resistance

d1297

Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2411

Abstract: 2SK2411-Z IEI-1213 MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor de- in millimeter 10.6 MAX. 10.0 • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)

2SK2412

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ357

Abstract: C11531E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ PACKAGE D IM ENSIONS in m illim eter sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N PACKAGE DIMENSIONS T he 2SK2410 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .

2SK2353

Abstract: 2SK2354 IEI-1209
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- PACKAGE DIMENSIONS tor designed for high voltage switching applications. in millimeters

K2415

Abstract: NEC 2415 NEC JAPAN 2415 K 2415 mp32
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _ 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S K 2415 is N -C hannel M O S Field Effect Transistor designed for high PACKAGE DIMENSIONS {in m illim eters v o ltag e sw itching applications.