TC5117440BSJ60 Search Results

TC5117440BSJ60

Abstract: TC5117440BSJ TC5117440BSJ/BST-70
Contextual Info: TOSHIBA TC5117440BSJ-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117440BS J-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both