TC518128B
Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
Text: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes
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TC518128B
TC5181
TC518128BPL
SPL/BFL/BFWL/BFTL-70/80/10
TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1
TRANSISTOR BFW 11 pin diagram
TC518128
TC518128bfl
pin diagram of TRANSISTOR BFW 11
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TC518128BPL
Abstract: No abstract text available
Text: TOSHIBA TC518128BPI/BFVBFW I/BFTL-70V/80V/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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TC518128BPI/BFVBFW
I/BFTL-70V/80V/10V
TC518128B-V
TC518128B-V
-70V/80V/1
TC518128BPL/BFL/BFWUBFTL-70V/80V/1OV
TC518128BPL
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TC518128
Abstract: 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263
Text: TOSHIBA TC518128BPiyBFiyBFWiyBFIlr70V/æV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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TC518128BPiyBFiyBFWiyBFIlr70V/
TC518128B-V
TC518128BPL/BFL/BFWL/BFTL-70V/80V/1OV
TC518128
518128
TC518128bfl
tc518128bftl
80D-80
TC518128B
TC518128bfwl
A8263
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transistor D128
Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
TheTC518129B
D-132
TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL
D-133
transistor D128
TC518129
D128 transistor
transistor d133
ksh 200 TRANSISTOR equivalent
TRANSISTOR 80l
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
D-133
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T C 5 1 8 1 2 9 B P iy B F L /B F W I7 B F T L r 7 0 V /8 0 V /1 0 V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 w ords by 8 bits. The TC518129B-V
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TC518129B-V
TC518129B-V
risBFTL-70V/80V/1OV
D-147
TC518129BPL/BFL/BFWL/BFTL-70V/80V/1OV
D-148
TCn724fi
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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TC518129BFW
Abstract: D147 ic dip d143 T transistor TC518128 BFL 147
Text: TOSHIBA TC518129BPL/BFiyBFWI7BFrL-70V/8ÖV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC 518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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TC518129BPL/BFiyBFWI7BFrL-70V/8
518129B-V
TC518129B-V
D-146
TC518129BPL/BFL/BFWL/BFTL-70V/80V/10V
D-147
TC518129BPL/BFL/BFWL/BFTL-70V/80V/1OV
2SA1015
TC518129BFW
D147 ic dip
d143 T transistor
TC518128
BFL 147
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T C 5 1 8 1 2 8 B P iy B S P I/B F iy B F W iy B F T L - 7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W L /B F IIr 7 0 L /8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TC518128B utilizes
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TheTC518128B
TC518128B
TC518128BPL/BSPL/BFL/BFWL/BFTL-70/80/10
TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1
TCH724A
002b52b
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TC511632
Abstract: TC518128 BTRL FL 16.0
Text: Pseudo Static RAM C apacity 256KB» T yp e N o . X6 O fgt^za^on Active 115 385 85 135 303 TC51832AP/ASP/AF-10 100 160 248 TC51832APUASPL/AFL-70 70 115 385 TC51832APL/ASPL/AFL-85 85 135 303 TC51832APUASPL/AFL-10 100 160 248 32,768 X 8 5V±10% 85 135 385 100
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TC51832AP/ASP/AF-70
TC51832AP/ASP/AF-85
TC51832AP/ASP/AF-10
256KB»
768x16
072x8
FL/BFWL/BFTL/BTRL-70V
TC511632
TC518128
BTRL
FL 16.0
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