TC55NEM216ASGV Search Results
TC55NEM216ASGV Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TC55NEM216ASGV55 |
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262,144-Word BY 16-BIT FULL CMOS STATIC RAM | Original | 216.33KB | 12 | ||
TC55NEM216ASGV70 |
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262,144-Word BY 16-BIT FULL CMOS STATIC RAM | Original | 216.33KB | 12 |
TC55NEM216ASGV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TC55NEM216ASGV55Contextual Info: TC55NEM216ASGV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ASGV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to |
Original |
TC55NEM216ASGV55 144-WORD 16-BIT TC55NEM216ASGV 304-bit | |
tsop-56 samsung
Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
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576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga |