TC55VCM216ASGN40 Search Results

TC55VCM216ASGN40

Abstract: TC55VCM216 TC55VCM216asgn
Text: TC55VCM216ASGN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to