TCA 290 D Search Results
TCA 290 D Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 10058831-211LF |
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Micro-TCA Card Edge Connectors,Pressfit termination,170 contacts, 30u\\. GXTplating,Matte Tin tail plating. | |||
| 10058835-1002LF |
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Micro-TCA Card Edge Connectors,Surface Mount termination,170 contacts30u\\. Gold plating.Matte Tin tail plating. | |||
| 10058831-111LF |
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Micro-TCA Card Edge Connectors,Pressfit termination,170 contacts,30u\\. GXTplating, GoldMatte Tin tail plating. | |||
| 10084423-103LF |
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Micro-TCA Card Edge Connectors, Storage & Server System, 70 Position Right Angle card edge connector, 0.76um Gold plating. | |||
| 10084423-203LF |
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Micro-TCA Card Edge Connectors, Storage and Server System, Right Angle, Surface Mount, 70 Position, 0.80mm (0.031in) pitch. |
TCA 290 D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung |
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KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns | |
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Contextual Info: TSG400 Manual Time Signal Generator Time Signal Generator TSG400 Version P161.01 Serial number XXXX-XXXX SPEC No. Revision State C-MAX printed Version Page TSG400 P161.01 14.07.2005 03.05.2007 English 1 of 24 C-MAX Time Solutions Manual TSG400 Technical data |
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TSG400 250mA 500mA | |
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Contextual Info: Manual TSG800 Time Signal Generator Time Signal Generator TSG800 Version P143.03 SPEC No. Revision State C-MAX printed Version Page TSG800 P143.03 23.11.04 03.05.2007 English 1 of 41 C-MAX Time Solutions Manual TSG800 Application: o o o o o Simulation of time signals DCF, MSF, WWVB, HBG and JJY |
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TSG800 | |
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Contextual Info: T O S H IB A UNDER DEVELOPMENT TMP90CH45 CMOS 8-BIT MICRO CONTROLLERS TMP90CH45N/TMP90CH45F 1. OUTLINE AND CHARACTERISTICS TMP90CH45 is a high speed, high performance 8-bit microcontroller developed for application in the control of various devices. TMP90CH45, CMOS 8-bit microcontroller, integrates an 8-bit CPU, RAM, A/D |
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TMP90CH45 TMP90CH45N/TMP90CH45F TMP90CH45 TMP90CH45, TMP90CH45N TMP90CH45F TMP90CH45: MCU90-297 A8-15 | |
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Contextual Info: TOSHIBA TMP90CH45 CMOS 8-BIT MICRO CONTROLLERS TMP90CH45N/TMP90CH45F 1. OUTLINE AND CHARACTERISTICS TMP90CH45 is a high speed, high performance 8-bit microcontroller developed for application in the control of various devices. TMP90CH45, CMOS 8-bit microcontroller, integrates an 8-bit CPU, RAM, A/D |
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TMP90CH45 TMP90CH45N/TMP90CH45F TMP90CH45 TMP90CH45, TMP90C845A. TMP90CH45N TMP90CH45F A8-15 MCU90-506 | |
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Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and |
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KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns | |
t04 68 3 pin diode
Abstract: 16MHz quartz RESONATOR t04 68 3 pin transistor t04 68 diode t04 p6 TMP90C041A TMP90C041AN TMP90CM40F
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TMP90C041A TMP90C041AN. TMP90CM40F. 90C841A TMP90C041A TMP90C841A TMP90C840A) P01CR t04 68 3 pin diode 16MHz quartz RESONATOR t04 68 3 pin transistor t04 68 diode t04 p6 TMP90C041AN TMP90CM40F | |
TMP90C041F
Abstract: t04 68 diode TLCS-90 TMP90C041A TMP90C041AF TMP90C041AN TMP90CM40F 16MHz CMOS resonator tmp90c04
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TLCS-90 TMP90C041A TMP90C041N/TMP90C041F TMP90C041A TMP90C041AN 64-pin SDIP64-P750) TMP90C041AF TMP90C041F t04 68 diode TMP90CM40F 16MHz CMOS resonator tmp90c04 | |
TMP90C051F
Abstract: toshiba microprocessor 8x TMP90C051
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TMP90C051F TMP90C051 TLCS90) 16-bit MCU90-344 toshiba microprocessor 8x TMP90C051 | |
k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
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FM18L08
Abstract: FM20L08 FM20L08-60-TG
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FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG | |
FM18L08
Abstract: FM20L08 FM20L08-60-TG
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FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG | |
TCA 290
Abstract: FM20L08-60-TG1 FM20L08-60 FM18L08 FM20L08 FM20L08-60-TG
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FM20L08 128Kx8 33MHz 128Kx8 TCA 290 FM20L08-60-TG1 FM20L08-60 FM18L08 FM20L08 FM20L08-60-TG | |
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Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules |
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FM20L08 128Kx8 33MHz 128Kx8 | |
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Contextual Info: Prelim inary HB56D236BW/SBW-6B/7B/8B 2,097,152-Word x 36-Bit High D ensity D ynam ic RAM M odule Rev.O Dec.20. 1993 HITACHI The IIB 5 6 D 2 3 6 is a 2M X 36 d yn am ic R A M module, mounted 16 pieces of 4 M b it D R A M H M 5 1 4 4 0 0 BS sealed in S O J package and 4 |
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HB56D236BW/SBW-6B/7B/8B 152-Word 36-Bit 72-pin HB56D23s 294/50/Klnkos/MFM M11T226 | |
TLCS-90
Abstract: TMP90C441F tlcs90 opcode TMP90C441N tlcs-90 cpu 90c441
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TLCS-90 TMP90C441 TMP90C441N/TMP90C441F TMP90C441 TMP90C441N 64-pin SDIP64-P750) TMP90C441F tlcs90 opcode tlcs-90 cpu 90c441 | |
TLCS-90
Abstract: TMP90PH02M TMP90PH02P TMP90
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TLCS-90 TMP90 TMP90PH02 TMP90CH02 TMP90C802A TMP90PH02 TMP90C802A TMP90C802A. TMP90PH02P/TMP90PH02M TMP90PH02M TMP90PH02P TMP90 | |
TMP90C845
Abstract: TLCS-90 TMP90CH45F TMP90CH45N Toshiba TLC
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TLCS-90 TMP90CH45 TMP90CH45N/TMP90CH45F TMP90CH45 TMP90CH45N 64-pin TMP90CH45F TMP90CH45: TMP90C845 Toshiba TLC | |
GR-30-CORE
Abstract: SEL24 SIN227 ezm37010 geminax PEB 3265 IOM-2 IOM2 PCM-32 0.35 um CMOS technology
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10BaseV® 10BaseVX® 10BaseSTM, GR-30-CORE SEL24 SIN227 ezm37010 geminax PEB 3265 IOM-2 IOM2 PCM-32 0.35 um CMOS technology | |
16C256
Abstract: KM416C256DJ
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1C256D 256Kx16 40SOJ KM416C256DJ 16C256 KM416C256DJ | |
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Contextual Info: Ordering number : ENJK4915 _ CMOS LSI LC35256AM-15LV No. *4 9 1 5 I SAXYO 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview Package Dimensions The LC35256AM-15LV is an asynchronous silicon-gate CMOS SRAM with a 32K-word by 8-bit organization and |
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ENJK4915 LC35256AM-15LV 32K-word LC35256A -15LV LC35256AM-15LV | |
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Contextual Info: T L CO M PA TIBLE GATED SQUARE WAVE GENERATOR T2L Input and outputs Output wavetrain can be started in sync with random events # 8-pin Space Saver package # Leads - thru-hole, J, Gull W ing or Tucked # Available in frequencies from 2 MHz to 100 MHz # Output frequencies controlled to w ithin ±2% |
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MIL-HDBK-217 SSFGSWG-TTL-10 SSFGSWG-TTL-11 SSFGSWG-TTL-12 C/011593 | |
TMP90CH44F
Abstract: toshiba TLC TMP90CH44N TLCS-90 TMP90C844N TMP90C844
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TLCS-90 TMP90CH44 TMP90CH44N/TMP90CH44F TMP90CH44 TMP90CH44, TMP90CH44N 64-pin TMP90CH44F TMP90CH44: toshiba TLC TMP90C844N TMP90C844 | |
lm 524n
Abstract: 2095H
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THLG645111 THLG645111AFG 288-word 64-bit TC59G1631AFB THLG645111AFG-8 lm 524n 2095H | |