TCE 0041 Search Results

Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

3314A

Abstract: SA 20 PLS AT49SN12804 AT49SV12804 PR1-PR16
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

3525a

Abstract: MRC D17 AT52SQ1283J PA30 PA31
Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •

AT49SN6416

Abstract: AT49SN6416T Hardlock drive CSA43
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

AT49SN6416

Abstract: AT49SN6416T SA21D 56c2 2F360
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

W27e256

Abstract: W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256
Contextual Info: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27EOlO provides an electrical chip erase function.

PA30

Abstract: PA31
Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Asynchronous Access Time – 85 ns – Page Mode Read Time – 30 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout

AT49BV6416

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV640D

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

SA93

Abstract: SA97 AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV640T

Abstract: 21FFFF
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

MRC D17

Abstract: AT52SQ1283J PA31 la 78000 A7A1 SA135
Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •

MRC D17

Abstract: AT52SC1283J atmel 532 atmel 614
Contextual Info: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.7V to 1.95V VCC 1.8V to 1.95V for VCCQ and PVCC 128-Mbit Flash Features • 8M x 16 Organization • High Performance •

2481D

Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz

AT49BV128

Abstract: PA30 PA31
Contextual Info: Features • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout

SA97

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

3B8000

Abstract: SA97 sa92
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49SN3208

Abstract: AT49SN3208T AT49SN6416 AT49SN6416T
Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • • • – Random Access Time – 90 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 54 MHz

AT49BN6416

Abstract: AT49BN6416T AT49BV6416 AT49BV6416T Hardlock drive
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz

Atmel 3204

Abstract: AT49BN3204 AT49BN3204T AT49BN6408 AT49BN6408T AT49BN6416 AT49BN6416T AT49BV641 AT49BV641T BV641
Contextual Info: Features • 64-megabit 4M x 16 and 32-megabit (2M x 16) Flash Memories • 2.7V - 3.1V Read/Write • High Performance • • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz

SA97

Abstract: AT49BV6416 AT49BV6416T AT49BV642D AT49BV642
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV6416

Abstract: AT49BV6416T
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout