TCI AT DIODE Search Results

oIR 503

Abstract: Tektronix schematic schottky transistor spice
Contextual Info: TEKTRONI X INC/ INTEGR AT ED TCI/ INTEGRATED EIE D fiTDtilEM Q G G O n b CIRCUITS OPERATION , I L l f \ l. BIPOLAR PRODUCTS .ri. B “- r s p e c if ic a t io n s ! ORDERING INFORMATION j T -V 2 -2 Ï QUICKCHIP 6 FAMILY OF INTEGRATED CIRCUIT ARRAYS The QuickChip 6 family of Inte­

SLAU056

Abstract: SLAA222 MSP430 SLAA288 TCI diode Code Example for MSP430x4xx SIF1
Contextual Info: Application Report SLAA321 – August 2006 MSP430FW42x Scan Interface SIFDACR Calibration Robert Sabolovic . MSP430 - Advanced Embedded Controls ABSTRACT With this document, the user will become familiar with the features implemented in the

TFT panel power supply

Contextual Info: AT1731 Preliminary Product Information DC-DC Power IC for TFT Panel Feature • 2.6V to 5.5V Supply Voltage Operating Range. • 1.2MHz Fixed Switching Frequency. • Current-Mode PWM Step-Up Regulator • • • • • • • • Description The AT1731 DC-DC converter supply a compact and

Contextual Info: HOLTEK r n r ^ HT47C20 8-Bit Microcontroller Features • • • • • • • • • • • • • • O perating voltage: 2.4V~3.6V E ig h t bidirectional I/O lines Four in put lines One in terru p t in put One 16-bit program m able tim er/event counter w ith PFD program m able

iron constantan temperature sensor

Abstract: ULN2003A ULN2068B
Contextual Info: Technical Paper TP 80-2 GENERAL INFORMATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable

type k thermocouple input characteristics profile

Abstract: thermal resistance Thermocouple circuit type t Thermocouple Type K material TCI model 571 electronic oven control oven temperature sensors transistor subtitution ULN2003A ULN2068B
Contextual Info: THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability

ULN2003A

Abstract: ULN2068B
Contextual Info: THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability

oven temperature sensors

Abstract: thermal resistance measurement ULN2003A ULN2068B ALLEGRO MICROSYSTEMS
Contextual Info: APPLICATIONS INFORMATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability

LF50

Contextual Info: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)

LN1871Y5TRP

Contextual Info: Approved Checked Designed DEVELOPMENT SPECIFICATION P /N : LN 1871Y5TRP Y T A P P L I CAT I ON Soft Orange Light E l i t t i n g Diode M A T E R I A L GaAsP N At tached O U T L I Indicators E A B S O L U T E P M A X I M U M 60 R mW A T I N G S C O N D I T I O N

tm-1017

Abstract: JESD31 marking code ny SMD Transistor npn JEDEC JESD31 Automated Guided Vehicles project A434 RF MODULE MIL-I-46058 ASTM E104 M38510 cross index semiconductors cross index
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 September 2007. INCH-POUND MIL-PRF-38535H 16 March 2007 SUPERSEDING MIL-PRF-38535G 7July 2006 PERFORMANCE SPECIFICATION INTEGRATED CIRCUITS MICROCIRCUITS MANUFACTURING,

CMP02CJ

Abstract: CMP02CP CMP02CS CMP-02C 02cj CMP-01 CMP-02 CMP-02E CMP02EP CMP 02GR
Contextual Info: Low Input Current Precision Comparator CMP-02 ANALOG ► DEVICES G EN ER AL DESCRIPTION FEATURES • • • • • • • • The CMP-02 is a monolithic low input current comparator Low Offset V ö llig e 0.3mV Typ, 0.8mV Max using an advanced NPN-Schottky Barrier Diode process. It

Contextual Info: TCI 06-1 2592 X 1 CCD LINEAR IMAGE SENSOR 0 2 9 9 2 , SEPTEMBER 1 9 8 6 -R E V IS E D JULY 1 989 • 2 5 9 2 x 1 Sensor Element Organization • Virtual-Phase N-Channel Silicon MOS Technology • High Quantum Efficiency TOP VIEW C 1 OSC Enhanced Blue Response

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

IR 529

Abstract: diode Sr 203 Q62703-Q148 Q62703-Q833 ir 271
Contextual Info: LD 271 LD 271 L GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271 LD 271 L Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-LED, hergestellt im ● GaAs infrared emitting diode, fabricated in a

GMO06983

Abstract: Q62702-P5053 marking code diode 04 to-18
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 1 0.9 .1 (2.7) 4.05 3.45 Flat glass cap ø2.54 5.5 5.2 fmo06983 Cathode 1.1 .9 ø4.8 ø4.6 2.54 mm spacing ø0.45 14.5 12.5 GMO06983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

GEO06137

Abstract: OHRD1938 Q62702-P835
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

d 331 TRANSISTOR equivalent

Abstract: C 3311 transistor la 4142 74143
Contextual Info: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

GMO06983

Abstract: Q62702-P5053
Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

Contextual Info: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

3LD261

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

GEO06021

Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

Contextual Info: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 80-Serie • Miniatur-Gehäuse Features • GaAs infrared emitting diode