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    Abstract: No abstract text available
    Text: NT56V1616A0T 1,048,576-word x 16-bit Synchronous DRAM DESCRIPTION The NT56V1616A0T is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM fabricated in NANYA CMOS silicongate process technology. The device operates at 3.3V. The input and output are LVTTL compatible.


    OCR Scan     		PDF NT56V1616A0T 576-word 16-bit NT56V1616A0T 288-word 16-bit PC100 TDELQ25