TEKELEC TE 10 75 Search Results

PF5102

Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
Contextual Info: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w

Contextual Info: TEKELEC COMPONENTS bôE T> WM T Q 0 3 7 Û 7 DDGG141 7TS • DOUBLE BALANCED MIXERS Package Type Model n‘ BMH 158 Relay H eader F 56 677 Frequency ran ge RF LO 1 - 750 MHz IF DC - 750 MHz LO Level 7 dBm Tem perature ran ge - 5 5 / 100‘ C min max units

DH493

Abstract: 40144 DH-493 EH40144 DH40144
Contextual Info: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s

MX0912B350Y

Contextual Info: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high

equivalent of SL 100 NPN Transistor

Abstract: MX0912B250Y
Contextual Info: Data sha e t status Preliminary specification data o f Issue July 1990 MX0912B250Y NPN silicon planar epitaxial microwave power transistor APPLICATION DESCRIPTION • Interdigitated structure; high Intended for use in co m m on base em itter efficiency. • Diffused em itter ballasting

NPN Silicon Epitaxial Planar Transistor

Abstract: IEC134 MZ0912B100Y transistor Common Base amplifier NNN1
Contextual Info: blue binder, tab 12 Data sheet status Preliminary specification dats o f Issus July 1990 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting

Contextual Info: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n

Contextual Info: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N

transistor A968

Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB
Contextual Info: Philips Semiconductors M 00 ^ 3 106 PHILIPS INTERNATIONAL bSE D UHF power transistors FE A T U R E S • High input and output im pedances prom ote easy m atching BLV101A/BLV101B Q U IC K R E F E R E N C E DATA R F perform ance at T h = 2 5 °C in a com m on em itter test circuit. M o d e of

Hyde Park Electronics

Abstract: 4001 PA PIONEER
Contextual Info: /AN Ü ^ Sales Offices, Distributors & Representatives September 1991 Altera U.S. Sales Offices N O R TH ER N C A LIFORNIA C O R PO R A TE H EAD Q U A R TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408) 984-2800 FAX: (408) 248-7097

TEKELEC* te 358

Abstract: TEKELEC te 358 Tekelec sem 2005 0732 TEKELEC te 360 29718* intel
Contextual Info: intei INTEL 2/4 Mbit BOOT BLOCK FLASH MEMORY ERRATA This document describes all errata relating to the Intel 2 and 4 Mbit Boot Block Flash Memories. Two separate errata are described: 1. Errata 1: Erase Suspend Errata 2. Errata 2: Vlko Specification Errata

DELL 1525

Abstract: STR 456 D-73230 TEKELEC* te 358 Tekelec TE 10 75 HATTELAND TRANSISTOR c 5578 B SF 119 D H1088 nissei bv
Contextual Info: 23-013Q HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations Sept. 1997 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors & Microcontrollers Smart Card ICs

nsk Crystal osc

Abstract: NSK oscillator 1N1426 WB1333 airtronic capacitor bitek VDO ecu Tekelec airtronic
Contextual Info: 1CWORKS WB1333-1 Dual Serial Input PLL With 510 MHz Prescalers INFORMATION SEPTEMBER U9S THIS INFORMATION IS SUBJECT TO CHANGE UPON COMPLETION OF PRODUCT CHARACTERIZATION IC WORKS 3725 N. 1st STREET SAN JOSE, CA 95134 PH. 408-922-0202 FAX 408-922-0833 PIN ASSIGNMENT

UP62-90

Abstract: 55933 amcc pci matchmaker amcc s5933 data acquisition DMA Tekelec HTC
Contextual Info: S5933 32-Bit PCI MatchMaker F e b ru a ry 12, 1997 R evised O c to b e r 1998 Features A p p l ic a t io n s • • • • • • • • • • • PCI 2.1 Compliant Master/Slave Device Full 132 Mbytes/sec Transfer Rate PCI Bus Operation DC to 33 Mhz

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: V SIERRA SEMICONDUCTOR SCU024 2400 Bit Per Second Modem Analog Peripheral The SCI1024 is a complete 2400 bps5 V only modem IC containing all modem functions except the adaptive equal­ izer. It is used in conjunction with an external controller, such as the Sierra

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

6389G50

Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
Contextual Info: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.

Contextual Info: ì | N ic works ,li# Advance Information W42B930/931 3.3V PLL-Based System Clock Driver Function Table Features • Pin for pin com patible with Motorola MPC930/931 Reference/Status • Six LVCM OS/LVTTL clock outputs Parameter • Internal PLL circuit allows input frequency m ultiplication

422250

Abstract: elcom synthesizer TEKELEC te 360 95-5322 16 pin of IC 4520 HIGHWAY 09 20 PIN IC PIN DIAGRAM
Contextual Info: IC S1522 Integrated Circuit Systems, Inc. Product Preview User-Programmable Video Clock G enerator/ Line-Locked Clock Regenerator Description Features Serial programming: Feedback and reference divisors, VCO gain, phase comparator gain, relative phase and test

F0513 t

Contextual Info: FlashFlex51 MCU SST89F54 / SST89F58 Prelim inary Specifications FEATURES: • 8051 Compatible Multi-Purpose 8-bit Microcontroller Unit MCU with Embedded SuperFlash Memory for Design Flexibility Support External Address Range up to 64 KByte of Program and Data Memory

31-6733

Contextual Info: O SIERRA SEMICONDUCTOR S e p t e m b e r 1986 sciföö!7sciioi4 300/1200 Bit Per S econ d M od em s FEATURES BENEFITS • FSK an d PSK m odulators and dem odulators, high-band and low -band filters w ith com pro­ m ise am p litu d e and g roup delay equalizers