TEN GERMANIUM Search Results

AD149

Abstract: ad 149 valvo transistoren valvo OC 74 germanium transistor valvo oc 26 valvo transistor valvo transistoren germanium AD-149 valvo germanium
Contextual Info: AD 149 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR Mechanische Da ten; Gehäuse: Metall, JEDEC T0-3 3 A 2 DIN 41 872 Der Kollektor ist mit dem Gehäuse leitend verbunden. Für isolierten Einbau können Gl immerscheibe Typ P und Isolier­ buchsen (Typ C) gelie­

tunnel diodes

Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Contextual Info: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

germanium transistor pnp

Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Contextual Info: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e­

Germanium Power Devices

Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Contextual Info: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)

germanium power devices corporation

Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Contextual Info: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■

ac188k

Abstract: Transistor AC 188 ac188 AC 188 pnp transistor TO 1 valvo valvo transistoren valvo transistor AC 188 Transistor AC 188 k germanium transistor ac 188
Contextual Info: N ICH T FÜR N E U E N T W I C K L U N G E N GERMANIUM - P NP - NF - TRANSISTOR fUr Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit A C 18? E als komplementäres Paar Mechanische Daten: Gehäuse: Metall JEDEC TO-1 bzw. 1 A 3 nach D IN 41 871 in Ktthlklotz

Contextual Info: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM

Contextual Info: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM

Contextual Info: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM

Contextual Info: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium

SSOP16

Abstract: T0786 IF SSOP16
Contextual Info: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the

Contextual Info: Tem ic TST0913 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM

T4512

Abstract: TST0913 TST0913-TJQ TST0913-TJS
Contextual Info: TST0913 SiGe Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM

0603 footprint

Abstract: ATMEL 910 Atmel 710 0603 capacitor terminal footprint rfp 540 LL1608-FSR10J SSO16 SSOP16 T0780 R3R40
Contextual Info: T0780 800-1000 MHz High Linearity SiGe Active Receive Mixer Description The T0780 is a high-linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 10 dB of conversion gain while requiring only 0 dBm input to the

LL1608-FS12NJ

Abstract: SSOP16 T0787
Contextual Info: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the

Contextual Info: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the

Contextual Info: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the

rfp 540

Abstract: ATMEL 940 EHFFD1618
Contextual Info: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the

0603 footprint

Abstract: TOKO transformer t9 0603 capacitor terminal footprint "IF transformer"
Contextual Info: T0781 1700-2000 MHz High Linearity SiGe Active Receive Mixer Description The T0781 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1700 - 2000 MHz. It operates from a single 5 V supply and provides 11 dB of conversion gain while requiring only 0 dBm input to the

ATMEL 740

Abstract: EHFFD1618 SMA 142-0701-851 ATMEL 940 142-0701-851 SSOP16 T0785 0603 footprint atmel 950
Contextual Info: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the

TST0913

Abstract: TST0913-TJQ TST0913-TJS avx microcontrollers PSSOP-16
Contextual Info: TST0913 SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM

Contextual Info: T0782 2200-2700 MHz High Linearity SiGe Active Receive Mixer Description The T0782 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2200 to -2700 MHz. It operates from a single 5 V supply and provides 10 dB of

UL224D30

Abstract: UB880D radio fernsehen elektronik selen-gleichrichter L6516DG15 selengleichrichter L224D U6516dg bauelemente Kombinat D74LS999DK U6516D L6516DG15
Contextual Info: Typbezeichnung u nd K ennzeichnung von H alb le iterb a u e lem e n te n Dipl.-Ing. PETER H A N D R A C K Mitteilung aus dem V EB Kombinat Mikroelektronik Erfurt Ziel der Überarbeitung der TGL 38015 war es, sowohl die bei der A rbeit m it der beste­ henden Ausgabe gewonnenen Erfahrungen