TF 77 10A 250V Search Results

tf 216 10a 250v

Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
Contextual Info: Type K10B Thermal Cutoff Temperature rated Fuse 10Amp Axial Leaded www.optifuse.com (619) 593-5050 Ratings: Ampere Rating: 10A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113

B1470

Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q

usw-1

Abstract: thermal cutoff fuse USW-104T USW-122T USW-110T f 161 USW-139T USW-102T USW-109T USW-108T
Contextual Info: Thermal cutoff fuse. USW-1 U.S. Electronics Inc Thermal Cutoff Fuses Ph: 314 423 7550 USW-1 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Cutoff Temperature Th USW-102T 72°C(161.6°F) 70°C+2°C-2°C 47°C(116.6°F) USW-105T 77°C(170.6°F) 76°C+0°C-4°C

IRFD224

Contextual Info: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFD224

Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω

sgsp473

Abstract: RS2040 sgsp573 SGSP477
Contextual Info: S G S-THOMSON G?E J> g 7^5^53? dOl?^ ^ g : 73C 17426 D /•3^13 \{\l% S6SP473/P573 1 n Pi N-OHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIOIMS These products are diffused m ulti-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.

mosfet 20a 300v

Abstract: fmi20n50e
Contextual Info: FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmh20n50e

Contextual Info: FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmp20n50e

Contextual Info: FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

mosfet 20a 300v

Contextual Info: FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

IRF624

Abstract: RG-185 9472
Contextual Info: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFI624G

Abstract: diode IN 34A
Contextual Info: International S Rectifier PD-9.833 IRFI624G HEXFET P ow er M O S F E T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage D¡st,= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 250V ^DS on lD = 3.4A

IRFD224

Abstract: 90165
Contextual Info: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer

DF216S

Abstract: DF98S DF280S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

FMV20N50E

Contextual Info: FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

Thermal Cutoff Fuses

Abstract: tf 115 250v 2a thermal fuse 115 250V 2A thermal fuse 5A 250VAC 150C thermal-cutoff thermal fuse 115 thermal cutoff fuse tf 115 250v 15a USW-110T Thermal Cutoffs
Contextual Info: Thermal cutoffs Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW SERIES Fax: (314) 423 0585 PRODUCTS USW -1 Series USW-2 Series OVERVIEW The thermal cutoffs (TCO) are non resetting, thermally sensitive, single pole, normally closed devices and

D64VS3

Abstract: D64VS5 in5626 2N6676 D64VS4
Contextual Info: HIGH VOLTAGE/HIGH SPEED D64VS3 ,4,5 NPN POWER TRANSISTORS 300-400 VOLÍt S 15 AMP, 195 WATTS JEDEC EQUIVALENT - 2N6676, 77, 78 The D64VS series of N P N power transistors is designed for use in power switching applications requiring high-voltage capability, fast switching speeds and low-saturation voltages.

IRFB16N50KPBF

Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free l l l l l VDSS RDS(on) typ. 285m: 500V ID 17A

22mH 400v inductor

Abstract: IRFB16N50K TO-220aB DIODE 11A
Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive

035H

Abstract: IRFP23N50L IRFPE30
Contextual Info: PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement

tf 216 10a 250v

Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Contextual Info: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly

IRFB16N50K

Contextual Info: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive

Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive