TFK A 6 Search Results

TFK 305

Abstract: tfk 226 0/TFK 036
Contextual Info: A tfK c m "INTERCONNECT DIVISION OSX Microminiature Snap-On Connectors and Adapters OSX subminiature snap-on connectors from M/A-COM are an excellent blend of size, weight, durability and performance for applications such as GPS, automotive and wireless communications. OSX connectors are 30% smaller

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

ic ta 7699

Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
Contextual Info: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)

DSX151G

Contextual Info: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out­ standing stability and high reliability. Xs DV/K-Xu

Contextual Info: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o­ m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF

tfk 914

Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n

TFK 175

Contextual Info: A tfK Ô M m an A M P com pany 10W GaAs SPDT Switch DC-3 GHz MASW2020G V 2 .0 0 Features QNO 1 B1 COM RF1 GND 2 • V e r y l l i g l i P o w e r, l W atts I tl H C o m p r e s s i o n <f«-l()V • l.o w In s e r tio n Loss, 0. I d B T y p i c a l @ I C iH z

TFK U B

Abstract: R75n
Contextual Info: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl

tfk 140

Abstract: 3 TFK 140 TFK 400 EFNF-10 6 TFK 140 wire awg 18 TFK S 2X2200 Evox EFNF-3 filter tfk3
Contextual Info: TFK EFN EFN, TFK Inside apparatus mounted filter for industrial applications General-purpose single stage filters EFN and TFK-1 with solderable faston connectors at both ends; TFK 3, 6 and 10 with either solderable faston connectors or wires at both ends. EFN gives good protection against both common

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

IR diodes TFK 4

Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for auto­

tfk bpw 77

Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.

IR diodes TFK 4

Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
Contextual Info: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.

TFK 03 diodes

Abstract: tfk 605 TFK diodes tfk smd TFK 03 47 TFK 03 catalog telefunken TFK 03 160 2Z SOT23 TFK Label
Contextual Info: T e m ic TELEFUNKEN Semiconductors Tape and Reel Standards TEMIC offers T-l 3 mm and T-l3/4 (5 mm) LEDs pack­ aged on tape. The following specification is based on IEC publication 286, taking into account the industrial re­ quirements for automatic insertion.

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

B861

Abstract: TFK S 1 86 P
Contextual Info: 3 TM2S DRAKJM3 iS LNPISLJSHED. C0PYR2GHT IS Sf AMP JhCORPCW/MfD. D A AMP J4?J-â ftfV 03WAY94 i_X-JUN-96 15i58r25 oqpZMSJ /fJl^dâpttt23/d^]?23Aj.Æipoi«r/U,i?jfc*-d fiC 1 2 REVISIONS b 86 E R E V IS E D £ REDRAWN PER 0 7 2 0 - 0 8 5 6 - 3 5 17JUNSE QfCS WJV

Contextual Info: PART NO. NO. OF POS 20014-020-& 20P » -030-8* 30P n — 040-8* 40P " -050-8* SOP h ” 060—8* 60P m -080-8* 80P // -100-8* 100P 20076-020-* 20P —030— 30P '* -040-8* 40P f/ — 050—8* SOP ft — Q60—8* 60P " -080-8* 80P i f —100“ 8* 100P A 11.43

e1030

Contextual Info: A T 2 3 LO OD fO N 27 .6 O / 7t 7i E T3 o 2mmcoizmX'&']æ t? i > ^ n 3 [^] sr £ f/tS^O vfSSjÆ L “C «fe-â-C* £ i, 'J -t 7' ^ ^ 'V 3> ^ ± ^ ^ h ¿± sy =& 1 7 3 6 3 0 , 7 73637 O »— I cc NOTE ; /J^TO BE M E A S U R E D B E T W E E N P a ^ AND 2 ¿ ^ T O BE M A TE WI TH C A P HSG S M O O T H L V

BA532

Abstract: IS002 BA521U BA-532 ba521
Contextual Info: 1 3 .2 V • BA521U, t -ZV7i. ft - 7 > 7 ” Physical Dimensions) IC'C^o 6W O-y AO-iM v h /\° 7 I fflic ¡ft St L A : • - 5 .8 W BA521 QUALITY RELIABILITY ì f i U G O £ t -, -f=?* y yO *: - * K (!£•(£ : imi) 3.6±C.2 M (Features) 1. ^ m * 5 .8 W (T M D = IO % )x ,V:;ii!i!>(r>5dB)T'«te^„

Diode BAY 54

Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Contextual Info: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW