TFO 5V Search Results

Contextual Info: r TOSHIBA -CDISCRETE/0PT039097250 TOSHIBA tfo S n b n ~TD »TJiOIVdiiü 90D <DISCRETE/OPTO> SEMICONDUCTOR üüiibdbd D7 -3 3 -35 " 16363 TOSHIBA GTR MODULE ' MG 3 0 0 M 1 F K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

fuse T2,5A250V

Abstract: molex 41791 s47k SN230 MPS-30 MPS-30-12 MPS-30-15 MPS-30-24 MPS-30-27 MPS-30-48
Contextual Info: MW [" ban w e MPS-30 3 0 W S in g le O u tp u tfo r Medical Type series I Features : Universal AC input / Full range Low leakage current £ 0.3mA Protections: Short circuit / Overload / Over voltage / Over temperature Fixed switching frequency at 100KHz

BA6v

Contextual Info: TOSHIBA {DISCRETE/OPTO} il TO »E| 9097250 TOSHIBA DISCRETE/OPTO tfoîiubn D D lb S f if l 90D 16288 D T - 33-35 TOSHIBA GTR MODULE SEMICONDUCTOR MG 300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE TECHN ICAL D AT A HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

transistor 2Sc 2053

Contextual Info: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '

IC 74HC00

Abstract: tPHL 74hc00 5V 74HC00 74HC00 74hc00 equivalent 74HC00 B1 74hc00 tphl tplh SGS-Thomson 74hc00
Contextual Info: M54HC00 M74HC00 S G S -T tfO M S O N QUAD 2-INPUT NAND GATE HIGH SPEED tpD = 8 ns TYP. at V c c = 5V LOW POWER DISSIPATION Ice = 1 (MAX.) at T a = 25°C HIGH NOISE IMMUNITY V n ih = V n i L = 28% V CC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS vu 1 B1

design of 4-20mA transmitter for abridge type transducer circuit diagram

Abstract: IC ADM 866 REF19x Series
Contextual Info: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '

T1693M

Abstract: TL593M TL-694 TL593 ic TL694C TL495 TL493 ST TL493 TL593 tl693
Contextual Info: TEXAS S9S1724 INSTR TEXAS -CLIN /IN TFO IN ST R SS D Ë J ÖTblTEM 0D34t54 <LIN/INTFC 55C 1 |~ 34624 T-5 8-1 1 -3 1 TYPES TL593, TL594, TL595 PULSE-WIDTH-MODULATION CONTROL CIRCUITS LINEAR INTEGRATED CIRCUITS D2712, APRIL 1983-REV1SED DECEMBER 1983 Complete PWM Power Control Circuitry •

KEYBOARD IBM PC XT

Abstract: densitron lcd duck
Contextual Info: □ENSITRON CORPORATION D.U.C.K. * —TH E IB M * PC PLA TFO R M FO R A LL FLAT PANEL A P P LIC A TIO N S CATALOG NO. D.U.C.K. The D.U.C.K. is a low power, high performance IBM XT compatible single board computer with a direct interface to Densitron's large graphic flat panels.

OKI g3 gs lead free

Contextual Info: 31E P COP888CF NATL S E M I C O N D CUP/UCJ b S O l l S Ö 0 0 b ? 7 0 ci 1 National PRELIMINARY Semiconductor T - tf- tfo Z COP888CF Single-Chip microCMOS Microcontroller i Two 16-bit timers, each with two 16-bit registers sup­ porting: — Processor Independent PWM mode

MPA-S-112-A 12V

Contextual Info: 5 | M IT E L SP5655 _ 2-7GHz Bidirectional l2C Bus Controlled Synthesiser SEMICONDUCTOR a u v n u u i^ u u iu n *• n A d v a n c e In tfo rm a tio Supersedes July 1996 version, DS3743-4.3 T he S P 5 655isasinglechipfrequency synthesiser designed

cp 5611 a2

Contextual Info: 5 | M ITEL SP5611 _ 1-3GHz Bidirectional l2C Bus Controlled Synthesiser *• n A d v a n c e In tfo rm a tio SEMICONDUCTOR a u v n u u i^ u u iu n Supersedes February 1997 version, DS3758-4.1 The SP5611 is a single chip frequency synthesiser d e ­

BA10393

Abstract: BA10393N BA10393F 00370-42-LSI662
Contextual Info: BA10393/BA10393F/BA10393N BA10393/BA10393F BA10393N • Dual Comparators \ti£ 0 /D im e n s io n s U n it: mm BA10393, BA10393F, BA10393N l i , f i l 7; U 3 > / t U 7 -T + - K O R iiS c tfo Is g T 'to 36V, li 1 ~ ± 18V T '-fo M - y ' r - v DIP8pin(BA10393),

Contextual Info: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­

Contextual Info: r = J S G S -T tfO M S O N ST5451 ISDN HDLC AND GCI CONTROLLER A D V A N C E DATA . • ■ ■ ■ . . ■ MONOLITHIC ISDN ORIENTED HDLC AND GCI CONTROLLER. GCI AND |iW/DSI COMPATIBLE. FULLY CONTROLLING GCI AND GCI-SCIT M & C/I CHANNELS MANAGEMENT. FULLY SUPPORTING LAPB AND LAPD

sk42

Abstract: 1r1h
Contextual Info: ^ TOSHIBA {DISCRETE/OPTO> 9 0 9 7 2 5 0 T O S H IB A DE I clQci7550 0QlL n74 99D 166 74 < D IS C R E T E / O P T O D jr-2.îT T - tfoÀiiìht SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 4 2 2 SILICON N CHANNEL MOS TYPE < TT- M O S ) INDUSTRIAL APPLICATIONS

CD 75232

Abstract: cd 75233 D2433 AM26LS31C AM26LS31M RS-422-A 75236 2A0710
Contextual Info: TEXAS INSTR -C LI N/IN TFO il 8961724 TEXAS »e | 0 ^ 1 7 2 4 IN ST R L IN /I NT FC D07S231 0 91D 75231 AM26LS31M, AM26LS31C QUADRUPLE DIFFERENTIAL LINE DRIVERS D 2 4 3 3 , JA N U A R Y 1 9 7 9 -R E V IS E D OCTOBER 1986 T-7S-V$-05' Meets EIA Standard RS-422-A

2SK794

Abstract: C1B capacita
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A tfo à itib a TT DE I t D T T S S O D IS C R E T E /O P T O 99D 16769 □ □ l t 7 b cl D T -3 9 ~ \3 SEMICONDUCTOR T OSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 7 9 4 (7T-M0S)

CXA1158P

Abstract: cxa1158 sawtooth CXA1268P ltzt
Contextual Info: s o n y C X A 1 2 6 8 P For the availability of this product, please contact the sales office.l : mm CXA1268P}*, ' f a ? * . ? •> 3 hl/- 28 t*> DIP ic ? t, d ic ic < k -it, L'i>x h u - '> 3 > tfo S fid ^aS 9 K . « , M X M o B V tttc J ;<9, h ^ ; i / o x h

Diode LT 450

Abstract: LT13 2x33 LTC1267
Contextual Info: LTC Battery-Powered DC/DC Conversion Solutions T h e follow in g tables fo r m a s h o r tfo r m c o m p o n e n t selection guide fo r a collection o f c o m m o n l y used batterypow ered D C / D C c o n ve rsion applications. N o design is required since inductor, capacitor and resistor values are

MN3206

Abstract: AF-5 Low Noise BBD 128-Stage Clock frequency range
Contextual Info: MOS 1C, LSI MN3206 MN3206 12 8 $ s n & w i ± n t t 7 - - □ □ - / -r x b b d 1 2 8 -S ta g e Low V oltage O peration, Low N oise BBD for Analog Signal D elays • ^/D escrip tio n MN3206 U n it ^ mm i M 5 i | S | g c l 2 8 I S I r i r T S i a £ i & f ^ V DD = 5V)tfO

Contextual Info: XI 7 ^0 M OT S C M .E 1" •'• ' u p " . * .«. f c i l i E * f * 0 !« s ill >mm ., . T i a mm ■» «— ■>' ANSUE -I, N0T»S:4i-*WTERUL: HtAOER- m xw 4.6 94 V-0. HtNO - U tfo ESTMHADO 9 fcvi» U k t M S 1 N/CKEL? •-v•■-¿.¡l:ii$&i>"" <■

Contextual Info: T O S H I B A -CDISCRETE/OPTOJ 9097250 TOSHIBA tfoÀìtìht D ^ | t O T 7ESD D O l L b ö T CDI S C R E T E / O P T O 99 D 16689 DT'S^-lj SEMICONDUCTOR T O S H I B A FIELD EFFECT T R A N SISTOR TECHNICAL DATA SILICON N C H A N N E L MOS TYPE 2 S K 5 2 6

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS tfo à ìub a 4096 WORD x 8 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ROM T M M ? 7 ^ ? D I 1 T M M 2 7 3 2 D I-2 N C H A N N E L S IL IC O N S T A C K E D G A T E M O S DESCRIPTION T h e T M M 2 7 3 2 D I ,5 a 4 0 9 6 w o m

AN3592K

Abstract: AN3592S phase shift detector V01D
Contextual Info: AN3592K, AN3592S AN 3592K, AN3592S P A L V T R Ï E Î I I Ï S / P A L V T R J u m p i n g C o r r e c t i o n C ir c u its • let AN3592K w A N 3592K , A N 3 5 9 2 S !i, PA LA 'iSV TR tfO L Pi - m & Unit : mm K t t W S W U ft m • A N 3592K , A N 3 5 9 2 S i; ; ^ } * iig £■ff L T i ‘ 5 ,