TG 988 Search Results

tg9e

Abstract: tg 988
Contextual Info: 64*-4 >@097:7/?@=3 6756 <;B3= =38/C 4GDQROGP Jeha Qk6BI9;<=9? , , , , Vi]hh ]j` bkn ie_nks]ra kraj :8E osep_dejc _]l]^ehepu 96=LS :=8YEG ]llnkra` ^u XO op]j`]n` =gY eilqhoa sepdop]j` rkhp]ca 2^apsaaj _keh ]j` _kjp]_po3 , SGF 1 TG h]ukqpo , Ijrenkjiajp]h bneaj`hu lnk`q_p 2UkLV _kilhe]jp3

leg-5

Abstract: GK64 tg 988
Contextual Info: 64*-4 >@097:7/?@=3 6756 <;B3= =38/C 4GDQROGP Jeha Qk6BI9;<=9? , , , , Vi]hh ]j` bkn ie_nks]ra kraj :8E osep_dejc _]l]^ehepu 96=LS :=8YEG ]llnkra` ^u XO op]j`]n` =gY eilqhoa sepdop]j` rkhp]ca 2^apsaaj _keh ]j` _kjp]_po3 , SGF 1 TG h]ukqpo , Ijrenkjiajp]h bneaj`hu lnk`q_p 2UkLV _kilhe]jp3

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e

3M 9890

Abstract: 9885 7007-048
Contextual Info: 162873 9890 4/19/99 12:54 PM Page 1 (Process Black plate) 3 Technical Bulletin TM System Design and Performance for 3M Thermally Conductive Tapes 9882, 9885, 9890 April, 1999 Notes on System Design and Performance This publication is intended to aid the user in optimizing the design and performance

TC-2707

Abstract: DP190 5589H Outgassing
Contextual Info: Technical Data January, 2010 3M Thermally Conductive Epoxy Adhesive TC-2707 Product Description 3M™ Thermally Conductive Epoxy Adhesive TC-2707 is an aluminum metal filled, two-part, thermally conductive epoxy adhesive. Key Features • Improved thermal conductivity.

DP460

Abstract: D1876 epoxy thinner Outgassing 5589H Outgass DP-460 ADHESIVE GAP PAD TC2810+37ML
Contextual Info: Technical Data January, 2010 3M Thermally Conductive Epoxy Adhesive TC-2810 Product Description 3M™ Thermally Conductive Epoxy Adhesive TC-2810 is a boron nitride filled, two-part, thermally conductive epoxy adhesive. Key Features • Improved thermal conductivity.

hp dv5 schematic diagram free

Abstract: schematic hp dv7 hp dv5 U804 u806 HOLTEK MICROELECTRONICS RTC001 U807 D ECHO schematic diagrams n117
Contextual Info: Workview Design Kit User's Manual July 1998 Version 1.00 Preliminary Holtek Microelectronics Inc. TABLE OF CONTENT Chapter 1. Introduction Chapter 2. Installation Chapter 3. Before you start Chapter 4. Viewdraw – Workview schematic capture tool Chapter 5.

490.2159

Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
Contextual Info: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer

tm 1628 smd

Abstract: AN598 78610 3002 ic equivalent cte table epoxy IC 3004 200B hear HEINEMANN
Contextual Info: AN598 Plastic Packaging and the Effects of Surface Mount Soldering Techniques Author: John Barber Surface Mount Technology Team PURPOSE This application note is intended to inform and assist the customers of Microchip Technology Inc. with Surface Mount Devices SMD’s . The process of

1n4733 smd

Abstract: moisture during operation triac scr schematic AN599 capacitors coefficient of thermal expansion soft solder die bonding TP2222A triac triggering ic DS00598A-page Triac soft turn on
Contextual Info: AN598 Plastic Packaging and the Effects of Surface Mount Soldering Techniques Author: John Barber Surface Mount Technology Team PURPOSE This application note is intended to inform and assist the customers of Microchip Technology Inc. with Surface Mount Devices SMD’s . The process of

N458

Abstract: 8e89 C887 6ba9 G4EG 74G4 HC74G 0WQ1 A68g
Contextual Info: `echlmjmgr fmn hpkal beilg ald elqinmlkelo MK?J F;GM;E IJHAJ;FF;<E? FHLCHG =HGLJHEE?J 4d51;PCK BCAB KI?> KL;G>1;EHG? K?JC?K 6d748\RY =RPQ FWNNM @VZRVU 9VUZXVSSNX 2C@946=F5C@947=F3 -C_ W^ [\_W[ZRX2. 9 IF=1BK FRWZ VUR_`]U^ : g48G@EJH 8B>EG@I?CH 9N I?< :EC9@D8I@ED E= pq :ECC8D;H

TGC100

Abstract: TGC103
Contextual Info: 0 ^1723 7 ~ 4 Z -!/-O Y TGC100 SERIES 1-/tm CMOS GATE ARRAYS It u s ^32 DD7ÔD31 D 3 0 1 5 , OCTOBER 1 9 8 7 -R E V IS E D OCTOBER 1 98 8 Six Arrays with Up to 16,758 Useable Gates AC PERFORMANCE TEST STRUCTURE CELL COLUMN W |R|NQ CHANNEL Fast Prototype Turn-Around Time

2SA1610

Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
Contextual Info: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o

TSC 78L05

Abstract: pin diagram OF IC mt 8870 LM358 voltage comparator thermistor 10k ohm CURVE 2N3904 EB 545 BT 816 manual ammeter Block diagram thermistor 10k 25c ammeter calibration method comparator schematic
Contextual Info: Calibrating the MTA11200 System AN570 TM Calibrating the MTA11200 System INTRODUCTION Notes and Precautions: This application note analyzes the calibration algorithm from theoretical and numerical approaches. It includes two calibration procedures, including information on

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

Contextual Info: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes

R300 diodes

Abstract: international rectifier R300 10B0 R300 R30D HIN35 cf rh ir R300
Contextual Info: INTERNATIONAL RECTIFIER ^ 3C 0 7 2 G 4 d 'T - o / ^ II O R I i n t e r n a t i o n a l , r e c t i f i e r - •- Data Sheet n o . ku-z.i40 “ - - 73 D | 4A5545E 00u7dD4 3 ■ ■ R30D & R30DR SERIES 1000 - 400 VOLTS RANGE 450 AMP AVG STUD MOUNTED

Contextual Info: EDI8L32128C ^ E D I 128Kx32 SRAM Module aecFBONC o e s g n i nc.1 128Kx32CMOSHighSpeed StaticRAM F e a tu re s The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. Four Chip Enables, Write Control, and Output Enable

71001 EB

Abstract: EIA 481-E "8 bc" regulator 1297 4701 dr 8538 BR11-BR14 Transistor AC 51 0865 75 834 940 629 MOTOROLA 220 BB 8615 an 7591 power amp
Contextual Info: MOTOROLA Order this document by MC145540/D SEMICONDUCTOR TECHNICAL DATA MC145540 Advance Information MC145540 ADPCM Codec This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 0

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type

Contextual Info: COM’L: -12/15/20,0-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges ■

OA210

Abstract: 10BS IR FAST RECOVERY
Contextual Info: 4855452 INTERNATIONAL RECTIFIER 02E 07924 D E 4fl55452 DQOVTEM 4 03-J23 Data Sheet No. PD-2.108 in t e r n a t io n a l , r e c t i f ie r IO R D | R30DF AND R30DFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 210 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES

Contextual Info: S FRS244D, FRS244R, FRS244H S e m ico n d ucto r y y 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs Jun e 1998 Features Package • 9A, 250V, RDS on = 0.41 5Q. TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

uPC1653

Contextual Info: SILICON MMIC NEC UPC1653A/P General Purpose Wide-Band Amplifier FEATURES DESCRIPTION AND APPLICATIONS • BROAD FREQUENCY RESPONSE : 1300 MHz TYP AT 3 dB DOWN The UPC1653 Silicon Monolithic IC is designed as a wideband amplifier covering the HF through UHF bands.