TGA1073G Search Results

TGA1073G

Contextual Info: Advance Product Information 19 - 27 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm

TGA1073G

Abstract: D549 TGA91073G
Contextual Info: TriQuint <% SEMICONDUCTOR, Advance Product Information 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA

TGA1073G

Abstract: GaAs pHEMT MMIC medium power amplifier TGA1073G-SCC
Contextual Info: Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

TGA1073G

Abstract: TGA1073G-SCC
Contextual Info: Product Datasheet January 16, 2001 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

bond

Abstract: g2411 TGA1073G
Contextual Info: TriQuint % Advance Product Information SEMICONDUCTOR, 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB * ^ Bias 5-7V @ 220 mA

TGA1073G

Contextual Info: TriQuirit <<Ê Advance Product Information BEMfWNDUGTQM» 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA

Contextual Info: Product Datasheet February 4, 2003 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

TGA1073G-SCC

Contextual Info: Product Datasheet February 4, 2003 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGA1073G

Abstract: 75TH TGA1073A TGA1073B TGA1073C
Contextual Info: TriQuint mmWave MMICs Statistical Performance Summary September 11, 2000 TGA1135 statistical performance summary Page 1 TGA1073A Statistical On-Wafer Performance Summary 24 22 -5 20 5th 18 25th 50th 16 75th 14 95th Input Return Loss dB Gain (dB) 3 Lots, 14 Wafers, 11792 Samples

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

100PF capacitor

Abstract: 34063 application note TGA1073G 311560 166466
Contextual Info: Application Note - Elimination of Bias Circuit Induced Oscillations Introduction TriQuint GaAs MMICs are designed to be stable across all operating conditions when biased and assembled per factory recommended methods. Careful characterization of each new device is performed during design verification