TGA8310 Search Results

Contextual Info: S E M I C O N D U C T O R , I N C TGA8310-SCC 2 to 20-GHz Frequency Range 3.5-dB Noise Figure Midband 1.4:1 Typical Input/Output SWR 17.5-dBm Output Power at 1-dB Gain Compr ession 9-dB Typical Gain # 4,115 x 2,362 x 0,102 mm 0.162 x 0.093 x 0.004 in. PHOTO ENLARGEMENT

302203

Abstract: diode 1321 TGA8310 TGA8310-SCC
Contextual Info: T R I Q U I N T S E M I TGA8310-SCC C O N D U C Low-Noise Amplifier ● ● ● ● ● ● 2 to 20- GHz Frequency Range T O R , I N C . 8310 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR 17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain

TGA8310-SCC

Contextual Info: Product Data Sheet May 22, 2001 2 - 20GHz Low Noise Amplifier TGA8310-SCC Key Features and Performance • 2 to 20- GHz Frequency Range • 3.5 dB Noise Figure Midband • 1.4:1 Typical Input/Output SWR • 17.5 dBm Output Power at 1 dB Gain Compression • 9 dB Typical Gain

jammers tg

Contextual Info: TGA8310-SCC 2- TO 20-GHz LOW-NOISE AMPLIFIER APPROVAL 5010 3.5-dB Noise Figure Midband 1.4:1 Typical Input/Output SWR 17.5-dBm Output Power at 1-dB Gain Compression 9-dB Typical Gain Size: 4 ,1 15x2,362x0,102 mm 0 .16 2 x0.093x0.004 in description The T G A8310-SCC low-noise distributed amplifier is suitable for a variety of wide-band electronic warfare systems

TGA8310-SCC

Contextual Info: Product Data Sheet June 12, 2002 2 - 20 GHz Low Noise Amplifier TGA8310-SCC Key Features and Performance • 2 to 20- GHz Frequency Range • 3.5 dB Noise Figure Midband • 1.4:1 Typical Input/Output SWR • 17.5 dBm Output Power at 1 dB Gain Compression

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGA8300-SCC

Abstract: 5.5 GHz power amplifier
Contextual Info: Microwave/Millimeter-Wave Products TGA8300-SCC 2 – 18 GHz Gain Block Amplifier The TriQuint TGA8300-SCC is a GaAs monolithic distributed amplifier designed for use as a multi-octave, general-purpose gain block. Four 189 µm gate-width FETs provide 7.5 dB nominal gain and 5.5 dB noise figure

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

Contextual Info: S E M I C O N D U C T O R , I N C 8310 H 2 to 20-GHz Frequency Range 3.5-dB Noise Figure Midband 1.4:1 Typical Input/Output SWR 17.5-dBm Output Power at 1-dB Gain Compr ession 9-dB Typical Gain # 4,115 x 2,362 x 0,102 mm 0.162 x 0.093 x 0.004 in. PHOTO ENLARGEMENT

531 amplifier

Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Contextual Info: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

GaAs MESFET amplifier

Abstract: TGA8310-SCC TGA8349-SCC 05um
Contextual Info: 0.5-µm Low-Noise, Low-Current MesFET LNLC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection