THE FIELD STOP IGBT FS IGBT Search Results

THE FIELD STOP IGBT FS IGBT Result Highlights (5)

Part	Manufacturer	Description
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS

THE FIELD STOP IGBT FS IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FGH40T120SMD Contextual Info: FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum	Original	FGH40T120SMD	PDF
FGH15T120 Contextual Info: FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum	Original	FGH15T120SMD FGH15T120	PDF
Contextual Info: FGH25T120SMD 1200 V, 25 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum	Original	FGH25T120SMD	PDF
Contextual Info: FGH40T120SMD 1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar	Original	FGH40T120SMD	PDF
Contextual Info: FGH25T120SMD_F155 1200 V, 25 A FS Trench IGBT Features General Description • • • • • • Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar	Original	FGH25T120SMD	PDF
Contextual Info: FGH15T120SMD_F155 1200 V, 15 A FS Trench IGBT Features General Description • • • • • • Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar	Original	FGH15T120SMD	PDF
Contextual Info: NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB50N60SWG NGTB50N60SW/D	PDF
15N120L Abstract: 15N12 NGTB15N120LWG Contextual Info: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB15N120LWG NGTB15N120L/D 15N120L 15N12	PDF
MJ1000 Contextual Info: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120LWG NGTB25N120L/D MJ1000	PDF
20N120L Abstract: NGTB20N120LWG Contextual Info: NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB20N120LWG NGTB20N120L/D 20N120L	PDF
Contextual Info: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D	PDF
Contextual Info: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB40N120FLWG NGTB40N120FLW/D	PDF
30N120IHL Abstract: NGTB30N120IHLWG Contextual Info: NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB30N120IHLWG NGTB30N120IHL/D 30N120IHL	PDF
NGTB30N60IHLWG Contextual Info: NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB30N60IHLWG NGTB30N60IHLW/D	PDF

Contextual Info: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB20N120IHLWG NGTB20N120IHL/D	PDF
20N120IHL Abstract: NGTB20N120IHLWG 20n12 20N120 Contextual Info: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL 20n12 20N120	PDF
25N120L Abstract: 25N120 NGTB25N120LWG Contextual Info: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is	Original	NGTB25N120LWG NGTB25N120L/D 25N120L 25N120	PDF
25N120IHL Abstract: NGTB25N120IHLWG NGTB25N120IHL 067147 Contextual Info: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N120IHL 067147	PDF
30N60S Contextual Info: NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB30N60SWG NGTB30N60SW/D 30N60S	PDF
Contextual Info: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB15N120LWG NGTB15N120L/D	PDF
Contextual Info: NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB30N65IHL2WG NGTB30N65IHL2W/D	PDF
45N60 Contextual Info: NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB45N60SWG NGTB45N60SW/D 45N60	PDF
NGTB60N60SWG Contextual Info: NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB60N60SWG NGTB60N60SW/D NGTB60N60SWG	PDF
40n60 Abstract: V8140 NGTB40N60IHLWG 40N60IHL Contextual Info: NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB40N60IHLWG NGTB40N60IHLW/D 40n60 V8140 40N60IHL	PDF

THE FIELD STOP IGBT FS IGBT Search Results

THE FIELD STOP IGBT FS IGBT Result Highlights (5)

THE FIELD STOP IGBT FS IGBT Datasheets Context Search

FGH40T120SMD

FGH15T120

15N120L

MJ1000

20N120L

30N120IHL

NGTB30N60IHLWG

20N120IHL

25N120L

25N120IHL

30N60S

45N60

NGTB60N60SWG

40n60