THE JAPANESE DIODE BOOK Search Results

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: The streak camera is an ultra high-speed detector which captures light emission phenomena occurring in extremely shorttime periods. Streak Tube Preface This booklet has been put together in order to introduce the operating principle of streak cameras, show some examples of how streak cameras are used,

MIP51

Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Contextual Info: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 „ Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.

IPD Converter

Abstract: MIP806 MIP814 MIP02 foreign exchange companies MIP2 MA2Z001 MIP501 MIP704 MIP805
Contextual Info: New L a r g e - s c r e e n E L D r i ve r M I P 8 1 4 • Overview Unit : mm Part A 4.3±0.2 0.25±0.1 10 9 8 7 6 123 4 5 0.5±0.07 12˚ 6.3±0.2 MIP814 is an IPD Intelligent Power Device that can drive large-screen EL display units with low current to deliver exceptionally bright pictures. Its

HSC277

Abstract: pin diode application
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

IC sine wave generator for automotive

Abstract: DB2S311 DMT9FK01
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features  Package  Two elements incorporated into one package (SBD + Tr)

MTM15624

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package  Overview  Code Mini5-G1  Pin Name 1: Cathode 2: Drain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features  Package  Two elements incorporated into one package (SBD + Tr)

MTM76720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package

MIP2L4MY

Abstract: mosfet MIP2L4MY MIP2L40MY 20/mosfet MIP2L4MY mip0 mip2e mip2L
Contextual Info: MIP2L40MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction

mosfet MIP2L4MY

Abstract: MIP2L40MY MIP2L4My MIP2L
Contextual Info: MIP2L40MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D61 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1

MA3ZD12

Abstract: XN09D58
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11

UN234

Contextual Info: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar type 4 elements Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 12° 0.3±0.1 16 151413121110 9 12 345678

MTM86627

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky

Contextual Info: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 „ Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)

mip2e

Abstract: mip2l3
Contextual Info: MIP2L30MS Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction

mip2l3

Abstract: mip2e 1/mip2l3 MIP2L30MS
Contextual Info: MIP2L30MS Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction