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    THERMAL PCB D2PAK Search Results

    THERMAL PCB D2PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL PCB D2PAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8x8 64 footprint

    Abstract: thermal PCB D2PAK ipl60r199cp IPL60R199 IPL60R299CP IPL60R385CP DB2010-0003 infineon smd Infineon Standard Power Products ipl60r
    Text: Product Brief CoolMOS in ThinPAK 8x8 The new leadless SMD package for CoolMOS™ Infineon Technologies introduces the ThinPAK™ 8x8, a new leadless SMD package for HV MOSFETs. The new package has a very small footprint of only 64 mm² vs. 150 mm² for the D2PAK and a very low profile with only 1 mm


    Original     		PDF B152-H9469-X-X-7600 DB2010-0003 8x8 64 footprint thermal PCB D2PAK ipl60r199cp IPL60R199 IPL60R299CP IPL60R385CP DB2010-0003 infineon smd Infineon Standard Power Products ipl60r

    MOSFETs

    Abstract: Continuous drain AOD452 A1024* transistor soc fuses TRANSISTOR aoD452 thermal SIMULATION AOD452 Equivalent mosfet THEORY AND APPLICATIONS
    Text: Power MOSFET Continuous Drain current rating and Bonding wire limitation Fei Wang , Kai Liu, Anup Bhalla Abstract Power MOSFET datasheets will usually show maximum values for continuous drain current Id, on the first page of datasheets. For bottom exposed part such as DPAK, TO220, D2PAK, there is always a note besides Id rating saying that Id is


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530S, SiHF530S D FEATURES D2PAK TO-263 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching


    Original     		PDF IRF530S, SiHF530S O-263) 2002/95/EC S-82110-Rev. 15-Sep-08 5M-1994. O-263AB.

    IRF520S

    Abstract: SiHF520S SiHF520S-E3
    Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRF520S, SiHF520S O-263) 18-Jul-08 IRF520S SiHF520S-E3

    SiHF740S

    Abstract: S8302 IRF740S SiHF740S-E3
    Text: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration Single D D2PAK (TO-263) • • • • • • • • Surface Mount Available in Tape and Reel


    Original     		PDF IRF740S, SiHF740S O-263) 18-Jul-08 S8302 IRF740S SiHF740S-E3

    IRF710S

    Abstract: SiHF710S
    Text: IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRF710S, SiHF710S O-263) 18-Jul-08 IRF710S

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9630S, SiHF9630S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF520S, SiHF520S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF510S, SiHF510S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF830S, SiHF830S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9540S, SiHF9540S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 0.55 Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration Single D D2PAK (TO-263) DESCRIPTION G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF740S, SiHF740S 2002/95/EC O-263) 18-Jul-08

    91077

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S 2002/95/EC O-263) 18-Jul-08 91077

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 18-Jul-08

    IRF840S

    Abstract: SiHF840S SiHF840S-E3
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel


    Original     		PDF IRF840S, SiHF840S O-263) 18-Jul-08 IRF840S SiHF840S-E3

    IRF9610S

    Abstract: No abstract text available
    Text: IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 3.0 Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration Single S D2PAK (TO-263) Surface Mount Available in Tape and Reel


    Original     		PDF IRF9610S, SiHF9610S O-263) 18-Jul-08 IRF9610S

    Untitled

    Abstract: No abstract text available
    Text: IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF710S, SiHF710S 2002/95/EC O-263) 18-Jul-08

    IRF840S marking

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 0.85 Qg (Max.) (nC) 63 Qgs (nC) 9.3 Qgd (nC) 32 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF840S, SiHF840S 2002/95/EC O-263) 18-Jul-08 IRF840S marking

    Untitled

    Abstract: No abstract text available
    Text: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9510S, SiHF9510S 2002/95/EC O-263) 18-Jul-08

    irf830s application notes

    Abstract: IRF830S SiHF830S SiHF830S-E3
    Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D2PAK (TO-263) G S Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF830S, SiHF830S O-263) 18-Jul-08 irf830s application notes IRF830S SiHF830S-E3

    IRF530S

    Abstract: SiHF530S SiHF530S-E3 IRF530STRL
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF530S, SiHF530S O-263) 2002/95/EC 18-Jul-08 IRF530S SiHF530S-E3 IRF530STRL

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D D2PAK • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF620S, SiHF620S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF610S, SiHF610S 2002/95/EC O-263) 18-Jul-08