THERMISTOR INAS Search Results

thermistor inas

Contextual Info: Detector Components Part No: IA-010-TE2/TO8 .550 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 1 2 3 4 .225 .075 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR CATHODE DETECTOR ANODE NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = =

thermistor inas

Contextual Info: Detector Components Part No: IA-020-TE2/TO8 .550 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 1 2 3 4 .225 .075 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR CATHODE DETECTOR ANODE NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = =

"Thermoelectric Cooler"

Abstract: KIRDB0119EA thermistor inas
Contextual Info: Thermoelectrically-cooled Detectors Thermoelectrically-cooled or TE-cooled detectors consist of an in­ frared detector (such as PbS, PbSe cells, InGaAs, Ge photodiodes and InAs detectors), a thermoelectric cooler and a thermistor sealed into the same package. There are one-stage TE-cooled types and twostage TE-cooled types. Temperature differences with regard to ambi­

Contextual Info: I REVISIONS DESCRIPTION 0 INITIAL RELEASE 1 CHANGES PER DCN 402287 DATE 04/12/99 11/03/0D REV APPROVED FC/HD WR/OFG D 156 1.002 DIA THRU 2PLCS ^ J 1.000 i.005 PIN ND. .50 R TUP VIEW .756 DIA - SEALANT A CUT PIN #6 FDR MATING PART SLEEVE CDLOR 1 THERMISTOR

J12TE2-66D-R01M

Abstract: J12TE3-66D-R250U INSB PHOTODIODE jones chopper J12-18C-R250U RBBG J12-18C thermistor inas detector inas hsa2
Contextual Info: Judson Technologies J12 SERIES INAS DETECTORS PB 220 October 2000 Operating Instructions Typical J12 Series Operating Circuit RF > 10x RD IS - Vo = IS • RF + Detector Ios Preamp Selection vs Shunt Selection Impedance Recommended Detector Shunt Op Amp Impedance ohms

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

thermistor inas

Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.

Contextual Info: InAsSb photovoltaic detector P12691-201 High-speed response and high sensitivity in the 8 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-201 is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystal growth technology and back-illuminated structure and by integrating a lens. The InAsSb photovoltaic detector has a PN

Contextual Info: InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal

United Detector Technology

Contextual Info: InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal

Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 High-speed, low noise photovoltaic IR detectors InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and lower noise.

IR detector

Abstract: photovoltaic module ir detectors Metal Detector Semiconductor Radiation Detector A3179 A3179-01 C1103-04 P4631-01 P7163
Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 High-speed, low noise photovoltaic IR detectors InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and lower noise.

thermistor inas

Abstract: pbs photoconductive photovoltaic module A3179 A3179-01 C1103-04 P10090 P10090-01 P10090-11 P10090-21
Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also

Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also

transistor C4159

Abstract: c4159 thermistor inas photovoltaic module P10090 pbs photoconductive A3179 A3179-01 C1103-04 P10090-21
Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver

N10110

Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.

A3179

Abstract: A3179-01 C1103-04 P4631-01 P7163 P8079 P8079-01 P8079-11 P8079-21 c4159 e
Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.

Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver

Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that

Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that

Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that

Contextual Info: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 —m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 —m as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver

Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also

LED36-TEC-PR

Contextual Info: LED36-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.