thermoresistance
Abstract: PT1000 MDI40C Ni100 PT100 IEC B PT1000 RTD PT1000 RTD probe PT1000 thermocouple signal converter pt1000 MDI40
Text: Panel Meters and Controllers Controller for Temperature Measurements Type MDI 40 CF • 3 3/4-dgt multi-range µP-based controller • Temperature measurements in °C or °F by means of thermoresistance or thermocouple probes and resistance measurement • All software functions selectable by key-pad
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MDI40CFX
thermoresistance
PT1000
MDI40C
Ni100
PT100 IEC B
PT1000 RTD
PT1000 RTD probe
PT1000 thermocouple
signal converter pt1000
MDI40
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PT1000 RTD
Abstract: PT1000 PT1000 table CFX 21 PT100 IEC B PT1000 thermocouple PT1000 RTD reference table PT1000 RTD probe LDI35 PQ-32/RTD-50-L-02
Text: Panel Meters and Controllers Temperature Meter/Controller Type LDI35 CF • 3 1/2-dgt meter or 3-dgt + dummy zero • Temperature measurements from thermoresistance or thermocouple probes and resistance measurements • Measurements in ºC or ºF • Indicator or controller
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LDI35
PT1000 RTD
PT1000
PT1000 table
CFX 21
PT100 IEC B
PT1000 thermocouple
PT1000 RTD reference table
PT1000 RTD probe
PQ-32/RTD-50-L-02
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PT1000 RTD
Abstract: PT1000 RTD reference table LDI35 KG 400
Text: Panel Meters and Controllers Temperature Meter/Controller Type LDI35 CF • 3 1/2-dgt meter or 3-dgt + dummy zero • Temperature measurements from thermoresistance or thermocouple probes and resistance measurements • Measurements in ºC or ºF • Indicator or controller
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LDI35
PT1000 RTD
PT1000 RTD reference table
KG 400
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thermoresistance
Abstract: No abstract text available
Text: Panel Meters and Controllers Controller for Temperature Measurements Type MDI 40 CF • 3 3/4-dgt multi-range µP-based controller • Temperature measurements in °C or °F by means of thermoresistance or thermocouple probes and resistance measurement • All software functions selectable by key-pad
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MDI40CFX
thermoresistance
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PDI 40
Abstract: ptc rtd controller RTY81 Ni100 ptc PDI40 KTY 81 6 ni100 KTY81 DSI panel thermoresistance
Text: Temperature Controls Single Loop PID-Controllers Type PDI 40 • 4-dgt multi-range µP-based PID controller • Temperature measurements in °C or °F • All software functions selectable by key-pad • PID, ON/OFF and neutral zone selectable controls • Autotuning, direct or reverse PID control and dynamic
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10VDC.
PDI 40
ptc rtd controller
RTY81
Ni100 ptc
PDI40
KTY 81 6
ni100
KTY81
DSI panel
thermoresistance
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rtd pt100 probe
Abstract: kty81 Ni100 ptc ptc rtd controller temperature PID
Text: Temperature Controls Single Loop PID-Controllers Type PDI 70 • 4-dgt multi-range µP-based PID controller • Temperature measurements in °C or °F • All software functions selectable by key-pad • PID, ON/OFF and neutral zone selectable controls • Autotuning, direct or reverse PID control and dynamic
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PDI70
rtd pt100 probe
kty81
Ni100 ptc
ptc rtd controller
temperature PID
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PT250 RTD
Abstract: BQ HSX PT250 table Pt100-250-500-1000 UDM35DS PT1000 table npn 1000V 100a PT100 IEC B pt100/PT100 PT1000 CONVERSION TABLE
Text: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • • • • Multi-input modular instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales
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UDM35
200mV
Pt100-250-500-1000,
Ni100,
20mA/10VDC
RS485
RS232
pan48mm
UDM35DS
PT250 RTD
BQ HSX
PT250 table
Pt100-250-500-1000
PT1000 table
npn 1000V 100a
PT100 IEC B
pt100/PT100
PT1000 CONVERSION TABLE
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LED37FC-SMD5
Abstract: No abstract text available
Text: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED37FC-SMD5
LED37FC-SMD5
670x770
150-200mA
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LED34-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED34-TEC-PR
LED34-TEC-PR
LED34
LED34
LED34-PR
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LED20-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates
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LED20-TEC-PR
LED20-TEC-PR
LED20
LED20
LED20-PR
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LED20FC-SMD5
Abstract: No abstract text available
Text: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid
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LED20FC-SMD5
LED20FC-SMD5
670x770
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD3
LED36-SMD3
300x300
150-200mA
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LED31-TEC
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED31-TEC
LED31-TEC
LED31
LED31
LED31-PR
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Untitled
Abstract: No abstract text available
Text: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED23-SMD3
LED23-SMD3
300x300
150-200mA
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gefran 230
Abstract: gefran pt100
Text: GFX4-IR 4-ZONE MODULAR POWER CONTROLLER FOR IR LAMPS AND INDUCTIVE LOADS Main features Stand-alone unit for independent control of four electrical power control loops. Extremely compact, with independent controls and advanced diagnostics. Used to control power for single-phase and 3-phase loads,
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E243386
2004/108/CE
2006/95/CE
gefran 230
gefran pt100
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gefran 230
Abstract: No abstract text available
Text: GFX-4 4 LOOP MODULAR POWER CONTROLLER Main features 4 independent loop control unit. Compact, ready to use, equipped also with fieldbus interface. Unit consisting of: • Controller • 30, 60, 80kW solid state relay • Current transformers one or four
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E2433866
2004/108/CE
2006/95/CE
gefran 230
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Untitled
Abstract: No abstract text available
Text: Digital Panel Meters Modular Indicator and Controller Type USC-DIN • • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales
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200mV
Pt100-250-500-1000,
Ni100,
001Hz
50kHz)
20mA/10VDC
RS485
RS232
RS232
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microcontroller based overvoltage and under voltage relays
Abstract: HITFET BTS117 BSP75N BSP78 BSP76 BTS133 bts3134 DS08 DIODE BSP77 BTS117
Text: HITFETs: Smart, Protected MOSFETs Application Note Automotive Power AP Number HITFETS Table of Contents Page 1
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Abstract: No abstract text available
Text: 27/05/2014 www.crouzet.com CT48A CT48A Part number 89420087 Input by J-K thermo-couple or by thermo-resistance Pt 100 2-wire 2 regulation modes : ON/OFF or proportional derivative selected by wiring Relay output Part numbers 89 420 087 Type Description Temperatures
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CT48A
CT48A
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LED29-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.9 µm Model LED29-TEC-PR 8 µW •Light Emitting Diodes LED29-TEC-PR are designed for emitting at a spectral range around 2900 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED29-TEC-PR
LED29-TEC-PR
LED29
LED29
LED29-PR
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LED19-TEC
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC 1.0 mW •Light Emitting Diodes LED19-TEC are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates
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LED19-TEC
LED19-TEC
LED19
LED19
LED19-PR
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LED23-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.35 µm Model LED23-TEC-PR 0.8 mW •Light Emitting Diodes LED23-TEC-PR are designed for emitting at a spectral range around 2350 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates
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LED23-TEC-PR
LED23-TEC-PR
LED23
LED23
LED23-PR
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LED36-SMD5R
Abstract: No abstract text available
Text: LED36-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD5R
LED36-SMD5R
300x300
150-200mA
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LED19-SMD5
Abstract: No abstract text available
Text: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED19-SMD5
LED19-SMD5
300x300
150-200mA
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