THYRISTOR 12A 600V Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12AM It (AV). 12A V d r m . 400V/600V

Contextual Info: Preliminary Datasheet CR12CM-12A R07DS1035EJ0300 Previous: REJ03G0350-0200 Rev.3.00 Feb 25, 2013 600V - 12A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 12 A  VDRM : 600 V  IGT : 30 mA Outline

Contextual Info: Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

DTM12C-N

Abstract: DTM12E-N DTM12G-N DTM12-N
Contextual Info: Ordering number:EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor Features Package Dimensions • Insulation type. · Peak OFF-state voltagte : 200 to 600V. · RMS ON-state current : 12A. · TO-220 package. unit:mm 1144 [DTM12-N] * : The gate trigger mode is shown below.

DTC12-N

Contextual Info: Ordering number : EN1883B N0.1883B _ P T C 1 -2 - N Silicon Planar Type 12A Bidirectional Thyristor F eatu re s •Peak OFF-state voltage : 200 to 600V • RMS ON-state current ; 12A ■TO-220 package A bsolute M axim um R atings at Ta = 25°C

T12A6CI

Contextual Info: T12A6CI SEMICONDUCTOR Bi-Directional Triode Thyristor 12A Mold TRIAC TECHNICAL DATA AC POWER CONTROL APPLICATION. A C DIM A B C D E F P F U FEATURES E S B ᴌRepetitive Peak Off-state Voltage : VDRM=600V. G ᴌR.M.S On-State Current : IT RMS =12A. ᴌHigh Commutaing (dv/dt)

BX703

Abstract: DTN12 DTN12E DTN12G BX70
Contextual Info: Ordering number: EN 473? DTN12 No.4732 Silicon Diffused Junction Type 12A Bidirectional Thyristor Features • AC power control. - Peak O FF-state voltage : 400, 600V. • RMS ON -state current : 12A. A b so lu te M axim um R a tin g s at Ta = 25°C Repetitive Peak

Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12BM V \ V v>. . • It ( a v ) . . 12A • V d r m . . 400V/600V • IGT .

30X30

Abstract: DTM12-N S 80 W
Contextual Info: Ordering number : EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor F e atu re s •Insulation type •Peak OFF-state voltage : 200 to 600V •R M S ON-state current : 12A ■TO-220 package DTM 12C-N 200 A bso lu te M ax im u m R atin g s a tT a = 25°C

M12J45

Abstract: T M12J45 m12g45 M12J45 OR EQUIVELENT SM12J45A m12g SM12G45 SM12G45A SM12J45 M12-j45
Contextual Info: SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S On−State Current : IT RMS = 12A

Contextual Info: SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT RMS = 12A

DTM12C-N

Abstract: DTM12E-N DTM12-N
Contextual Info: Ordering number:EN1880B _ DTM12-N Silicon Planar Type IS A 0 Y O I 12A Thyristor - Bidirectional ^ €._ Package Dimensions jtg^ Features • Insulation type* • Peak O FF-state voltagte : 200 to 600V. unit:m m / / 1144 / / * RMS ON'State current : I2A.

CR8CM-12A

Contextual Info: Preliminary Datasheet CR8CM-12A R07DS1034EJ0200 Previous: REJ03G1707-0100 Rev.2.00 Feb 25, 2013 600V - 8A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 8 A  VDRM : 600 V  IGT : 15 mA Outline

Contextual Info: Preliminary Datasheet CR6CM-12A R07DS1033EJ0200 Previous: REJ03G1706-0100 Rev.2.00 Feb 25, 2013 600V - 6A - Thyristor Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT (AV) : 6 A  VDRM : 600 V  IGT : 10 mA Outline

Contextual Info: Preliminary Datasheet CR8CM-12A R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 600V - 8A - Thyristor Medium Power Use Features • IT AV : 8 A • VDRM : 600 V • IGT : 15 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

Contextual Info: Preliminary Datasheet CR12CM-12B 600V - 12A - Thyristor R07DS0232EJ0200 Rev.2.00 Feb 25, 2013 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type

Contextual Info: Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type

Contextual Info: Preliminary Datasheet CR6CM-12A 600V - 6A - Thyristor R07DS1033EJ0300 Rev.3.00 Jul 30, 2013 Medium Power Use Features • IT AV : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A

Contextual Info: Preliminary Datasheet CR12FM-12B R07DS1100EJ0100 Rev.1.00 Aug 02, 2013 600V-12A-Thyristor Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type IT AV : 12 A VDRM : 600 V IGT : 30 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AG-A

Contextual Info: Preliminary Datasheet CR08AS-12A 600V - 0.8A - Thyristor Low Power Use R07DS0489EJ0300 Rev.3.00 May 22, 2013 Features • Non-Insulated Type • Planar Type • Surface Mounted type • IT AV : 0.8 A • VDRM : 600 V • IGT: 100 A Outline RENESAS Package code: PLZZ0004CA-A

CR5AS12A

Abstract: CR5AS-12A 20-100 general semiconductor mp3a CR3AS-12A
Contextual Info: Preliminary Datasheet CR5AS-12A 600V - 5A - Thyristor Medium Power Use R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Features • Non-Insulated Type  Plannar Type  IT AV : 5 A  VDRM : 600 V  IGT : 100 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)

Contextual Info: Preliminary Datasheet CR04AM-12A R07DS0636EJ0200 Rev.2.00 Aug 20, 2014 600V - 0.4A - Thyristor Low Power Use Features • • • • IT AV : 0.4 A VDRM : 600 V IGT: 100 A Planar Type Outline RENESAS Package code: PRSS0003EA-A PRSS0003DE-A (Package name: TO-92*) (Package name: TO-92(3)

thyristor t 718 n

Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM12 D, G,J 45A SILICON PLANAR TYPE AC P O WER C O NTROL A P PL I C AT I O N S. . Repetitive Peak Off-State Voltage : V[)RM= 200 ~ 600V . R.M.S On-State Current : It (RMS)= 12A . 4 Trigger Mode Guarantee . High Commutating (dv/dt)

SM12D41

Abstract: SM12J41 TOSHIBA THYRISTOR
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM12 D,G,J 41 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm FEATURES: 1Û3MAX. . Repetitive Peak Off-State Voltage : V d r m = 2 0 0 — 600V . R.M.S On-State Current : It (RMS)=12A jzia6 ± az . Suitable for Heating Controls, Motor Controls,