THYRISTOR 2200A Search Results

SG2200GXH24

Abstract: SG2200FXF24 thyristor 2200A
Contextual Info: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A

DCR4880M42

Contextual Info: DCR4880M42 Phase Control Thyristor DS5943-4 April 2013 LN30252 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS

DCR4500A36

Abstract: DCR4500A40 DCR4500A42 DS5942-1
Contextual Info: DCR4500A42 Phase Control Thyristor Preliminary Information DS5942-1.0 June 2009 LN 26810 KEY PARAMETERS FEATURES VDRM IT(AV) ITSM dV/dt* dI/dt Double Side Cooling High Surge Capability 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

DCR4500A42

Contextual Info: DCR4500A42 Phase Control Thyristor DS5942-4 April 2013 LN30255 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS

Contextual Info: DCR4500A42 Phase Control Thyristor DS5942-4 April 2013 LN30255 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS

Contextual Info: DCR4880M42 Phase Control Thyristor Preliminary Information DS5943-1.0 June 2009 LN 26811 KEY PARAMETERS FEATURES VDRM IT(AV) ITSM dV/dt* dI/dt Double Side Cooling High Surge Capability 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available

Contextual Info: DCR4060V22 DCR4060V22 Phase Control Thyristor Preliminary Information DS5773-1.2 May 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2200V ■ High Surge Capability IT AV 4065A ITSM 54000A dV/dt * 1500V/µs 300A/µs APPLICATIONS ■ High Power Drives

DCR4060V18

Contextual Info: DCR4060V22 DCR4060V22 Phase Control Thyristor Preliminary Information DS5773-1.2 May 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2200V ■ High Surge Capability IT AV 4065A ITSM 54000A dV/dt * 1500V/µs 300A/µs APPLICATIONS ■ High Power Drives

Contextual Info: DCR4880M42 Phase Control Thyristor DS5943-4 April 2013 LN30252 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS

DCR4880M42

Abstract: DCR4880M35 DCR4880M40
Contextual Info: DCR4880M42 Phase Control Thyristor Preliminary Information DS5943-2 June 2010 LN 27325 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available

Contextual Info: DCR4880M42 Phase Control Thyristor Preliminary Information DS5943-3 July 2012 LN 29653 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available

DCR4500A36

Abstract: DCR4500A40 DCR4500A42
Contextual Info: DCR4500A42 Phase Control Thyristor Preliminary Information DS5942-2 August 2010 LN 27491 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

Contextual Info: DCR4500A42 Phase Control Thyristor Preliminary Information DS5942-3 July 2012 LN 29654 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG2200FXF24, SG2200GXH24 DATA SG2200FXF24 INVERTER APPLICATION U nit in mm 2- ^3.5 ±0.2 • Repetitive Peak Off-State Voltage : V d r m ;= 4500V, 3300V • R.M.S On-State C urrent •

thyristor 2200A

Abstract: GXH24 650v thyristor
Contextual Info: SG2200 FXF,GXH 24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200 (FXF, GXH) 24 (SG2200FXF24) INVERTER APPLICATION U n it in mm 2-#3.5±0.2 DEPTH 2.1 ± 0 .4 Repetitive P eak Off-State Voltage : V d r m = 4500V, 3300V R.M.S O n-State C urrent : IT(RMS) = 1000A Peak Turn-Off C urrent

Contextual Info: SANSHA ELECTRIC MFG CO 37E J> B C THYRISTOR 7 ^ 1 2 4 3 DDQOlbS 4 B S E M J T - V 5r S f For general phase control applications such as speed controls, light controls and welders etc. '{03 -i ; „ • General power use . • I t = 1 0 0 A , I tirhsi= 160A

SC100C-80

Abstract: 160kgf GKVO
Contextual Info: -«-^ .- >r .t - J t t f'ñ „I^ t^ T ^ .-r. f c h W ii u r r t n . ï r SANSHA ELECTRIC MFG CO 7^1243 37E D DGGOlbS 4 H S E M J I C THYRISTOR r - a s r - 'i f For general phase control applications such as speed controls, light controls and welders etc.

MP02HB130-25

Abstract: MP02XX130 MP02XX130-20 MP02XX130-22 MP02XX130-25
Contextual Info: MP02XX130 Series MP02XX130 Series Dual Diode Modules Replaces January 2000 version, DS5100-4.0 DS5100-5.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VRRM 2500V ■ Electrically Isolated Package IFSM 2200A ■ Pressure Contact Construction IF AV (per arm)

MP02HB130-25

Abstract: MP02XX130 MP02XX130-20 MP02XX130-22 MP02XX130-25 DS5100-5
Contextual Info: MP02XX130 Series MP02XX130 Series Dual Diode Modules Replaces January 2000 version, DS5100-4.0 DS5100-5.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VRRM 2500V ■ Electrically Isolated Package IFSM 2200A ■ Pressure Contact Construction IF AV (per arm)

AN4853

Abstract: AN4506 AN4839 SV10 DIODE 300A VRRM 2500V DYNEX
Contextual Info: SV10 SV10 Rectifier Diode Replaces March 1998 version, DS4084-2.3 DS4084-3.0 January 2000 KEY PARAMETERS VRRM 2500V IF AV 180A IFSM 2200A APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

powerex cd

Abstract: thyristor 2200A prx taa thyristor switch
Contextual Info: b4E D H M E O • 7 2 c14tiSl DGOS'm 32b « P R X FG2200AH-xxD T POWEREX INC Powerex, Inc., Hillia Street, Youngwood, Pennsylvania 15697 412 825-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Man», France(43) 72.75.15 Asymmetric De-Alloy

Bipolar Static Induction Transistor

Abstract: SCR 1000A 4000a scr 150A SCR 2400V inverter grade SCR 600A thyristor scr SCR 100A 1200V thyristor module 700a mega 88 pa IGBT 6500V
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com FIRST QUARTER 2003 Powerex Raises the Bar in IGBT Technology with NF-Series U P C O M I N G TRADE SHOWS Annual Technical Conference of the IEEE Industry Applications Society October 12-16, 2003 Grand America Hotel

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP