TI 09T Search Results

2SC2228

Abstract: IR V 2238 V 2238 tk 2238 sc2238 2sc2238 2SA968 2SC2238A 2SC2238 2SA968 AC75
Contextual Info: ^ jjy N P H Z ^ ^ y p m ^ T jV ^ iP C T m SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS' ° «1 ti Unit 10.3 MAX. r O Power A m p lifie r O Driver Stage in mm 03.6±O. Z V - A p plication s. A m p lifie r \ 7 y -y -y 3 >- Applications. '• f T =

lzl 24h

Abstract: MPX GMF IC-8412 8412 EY aatj ctz fjc N4 09T UPD17P133 k 1821 717V2
Contextual Info: ~ r— S N E C ^r * 5^ — h* M os«m m sg MOS Integrated Circuit ^PDI7132,17132 A 'M S 3 UB 4 t f ‘y h • h ¿¿PD17132, 17132(A) ti, 9 =1 > / \ 'U — ? □ — > / ^ n - 7 0 > • U-fevM USI, 4 t*7 h * CPU t ^ 'f > ^ 7 x - 7 , 7” * V < ^ P = i> h P - 7 T ' T 0

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

TMP95C001

Abstract: TMP95C001F
Contextual Info: TOSHIBA JÜ S t U CMOS 16 t: 7 h 7 < i Q 3 > h P - 7 T LC S- 9 0 0 /H v ' J - x TMP95C001 t t i ; » id £ < 7 j£ ß # *± 1 6 ti y h V < O □ =l > h □ - ^TLCS-900/Hv 'J - X \ TMP95C001# R ^ tz tc t s u #¿: 9 * L S l £ ¿r'flJffl Z 4 '^ > tíT (Is £

FTG 1087 S

Abstract: aot 127 D17108 D1710S 17p107 ZC07 UPD 552 C sje 607 TK 9107 ltg 551
Contextual Info: M O S jfc ît [lE § M O S Integ rated C ircu it / ¿ 4 ti-y h ° ->> ï'Jls?- 7 7"* v - f i ' P P D 1 7 1 I 'D - 7 A i t f c 1 7 K 7 “ * r ? f - ^ è Î R f f l L ’0 ' £ f c ft, 5 y ^ ^ ’S T i b T ' t ' o 1 '^ T i 0 ^ r ^ î i l 6 t '- y h 1 £ t L T v> £ 1 " 0

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST GP 00 ALL RIGHTS RESERVED. LTR B 10 2X D . 1 09TYP i—. 0 2 8 X .285 DP REVISED PER ECO-1 0-01 9804 DATE DWN APVD 30SEP10

TRANSISTOR BO 346

Abstract: FL082 TC-6181 5511B
Contextual Info: Compound Transistor BA1 L3M # ili o ' < 4 7 a f f i t i i R , = 4 . 7 kQ, r t l L t l ' i t . R 2 = 4 . 7 k£2 O B N 1L 3 M t ? > - f i) / > ? i) f " f t'» ? T " è £ t (Ta = 25 °C) m n b 7 9 • XM W & =/ V <? 9 •i ; -'9 3 - : ' 9 * '': A i!H'tu^' i.

AC16F

Abstract: triac t 444 AC16DGM AC16EGM AC16FGM H150
Contextual Info: Thyristors AC16DGM,AC16EGM,AC16FGM 16 AC16r A "E — ;U K T R IA C A v~ 6oo K T R IA C T ”, v ^ •3 fé ^ K # ÌÌ t t 0 10.5 MAX. ft $ o T O -22OAB Y — X c o tz tö 'M m s T k f fä M i- ic o 0 i t , i tzM M 0 3.6 4.8 M A X . W- Kä* ' 1.4 1.4 fé'ê-ffi.JSTj = 125 “C -X s'h >) M M s f CO g È J t ^ 'ï S t^o

2SC2688

Abstract: transistor nec 2sc2688
Contextual Info: -> y a > s< *7 — V = 7 > '> 7 .9 Silicon P o w e r T ran sistor N P N = $ £ if r J l2 '> • h= 7— f w u h ' ^ p y t ü j * , h t * m J i m it ffëlÜ] Vd = l 000 V T Y P . .* m m C = 2 300 pF, E - B P ^ ^ M 7 X ) c re^ 3 .0 pF(V cb = 3 0 V) fT^ 5 0

AC16r

Abstract: AC16DSMA jb 5531 AC16D AC16DSM AC16FSM AC16FSMA T0220AB triac TIC 7506A
Contextual Info: SEC Ï T r / V v — A f 7 A 1 C 1 C S ' • ì / — h- 6 16 a 6 D D S S M M , A , A A 1 C 1 C 6 6 F F S S M AC16r jSM, AC16r jSMA li, A Tc = 68 °C OfJM ÌÈW TRIAC X~to ') — X l ± y — )V Vx Mb t i , >) ifli, è b iò rfiffl-c i-o fëtë, m i m a t i àì±<7)TO-220AB&#39;<-y

B633

Abstract: MIL-C-50
Contextual Info: 4 3 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. 0 COPYRIGHT BY AMP INCORPORATED. 19 2 ,19 LOC ALL RIGHTS RESERVED. GP DIST revisio n 00 LTR : DE SC RI PT IO N REV PER EC 0U1D-0275-00 CONNECTOR NATES WITH ANY 37 POS„ R5CEPTACL5 A N P L I N I T E S E R I E S 0 C0 N P L I E 5 WITH ANP S P 5 C „

Contextual Info: 4 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. 0 COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,19 LOC ALL RIGHTS RESERVED. DIST REVISIONS 77 BD DESCRIPTION LTR R REV PER EC 0G4 0-429-98 CONNECTOR NATES WITH ANY 50 ROS. RECEPTACLE A N P L I N I T E S E R I E S 0 CONP L I E S WITH ANR SPEC.

A109

Abstract: B633
Contextual Info: 4 3 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. 7 COPYRIGHT BY AMP INCORPORATED. 19 2 ,19 LOC ALL RIGHTS RESERVED. rev isio n : DIST 77 BD DESCRIPTION LTR 5 REVISED PER E C -0 UE 0-00 40-01 CONNECTOR NATES WITH ANY 50 POS. RECEPTACLE A N P L I N I T E S E R I E S 0 CONP L I E S WITH ANP SPEC.

2SC2767

Abstract: 30S3 F553 T151 T930
Contextual Info: 2302767_ TRIPLE DIFFUSED PLANER TYPE *< ? *> * H IG H SPEED SW ITCHING : Outline Drawings 4.5*02 1.3 • 45J I * Features • ¡4 H ig h • iftf ff S tt speed s w itc h in g H ig h re lia b ility i A p p lica tio n s • X - f ' y ? > 7 l ' % o . U —9

W1A 95 3 pin transistor

Abstract: LZ2314
Contextual Info: SHARP LZ2314AK LZ2314AK 1/3 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS L Z 2 31 4A K is a 1/3 -ty p e 6.0 mm solid-state im­ age sensor that consists of PN phote-diodes and TOP VIEW 16-PIN SDIP CCDs (charge-coupled devices). Having approxi­

A109

Abstract: MIL-C-50 MIL-T-10727
Contextual Info: 4 DRAWI NG MADE THIS IN THIRD D RA WI NG 0 ANGL E IS 3 UNPUBLISHED. COPYRIGHT 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 2 <3> PROJECTION LOC , 19 INTERNATIONAL RIGHTS DI 5T GP RESERVED. 00 R E V I 5 I ON! ZONE DE5CRIPTION LTR REV PER EC 0 U E 0 - 0 0 0 2 - 0 1

A109

Contextual Info: 4 DRAWI NG MADE THIS IN THIRD DRAWING ANGLE 3 15 U N P U B L I S H E D COPYRIGHT RELEASED 19 BY ANP FOR PUBLICATION INCORPORATED. ALL 2 <3> PROJECTIO N INTERNATIONAL RIGHTS DI S T LOC 19 BD RESERVED. 77 REV I 5 I0 N 5 ZONE LTR DESCRIPTION SUPERSEDED -3 PER ED 0020-587-96

06KA2

Abstract: 9GG33M IC 14511 pin diagram of IC 14511 Q321 TR 610s Fl Flux Cbl 36 IL223 LZ9GG33M LZ2316J
Contextual Info: SHARP SPEC No. ISSUE: E L 0 7 Z 0 4 1A Jan. 23 1996 To ; S P E C I F I C A T I O N S Product Type Single chip drive IC 270K/320K pixels B/W CCD Model No. LZ9GG33M i&This specifications contains 58 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.

T112-16

Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Contextual Info: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer­ bindlichkeiten abgeleitet werden*

Contextual Info: SHARP LZ2314J LZ2314J 1/3 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2314J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 270 000 pixels (horizontal 542 x vertical

178m09t

Abstract: MAA504 BA178M05T T0-220FP 78m05t 178m08t IN125 78M09T
Contextual Info: BA178M OO T B A 1 7 8 M O O T y ' J - X V V - X 3-terminal Positive Fixed Voltage Regulator • S / D im e n sio n s U n it: mm BA178M OOT v ' J - X t t , - ' s l ' f j . U - t Z ' T o #$£it>fcA*«EEA>e>, iS l'f t ? titzmiz&t>nELbm *> n s t „ tb * S E li,

12TZ51

Abstract: 05TZ51 05tz11 12-tz
Contextual Info: Low Power-Loss Voltage Regulators PQ05TZ51/PQ05TZ11 Series PQ05TZ51 /PQ05TZ11 Series Low Power-Loss Voltage Regulators with OFF-state Low Dissipation Current • Features Unit ! mm Outline Dimensions • Low power-loss (D ropout voltage : MAX 0.5V) • Surface m ount type package (Equivalent to ELAJ SC-63)

2SK385

Abstract: ne 545 d NE 545 Ci88
Contextual Info: 0U 091 08 — 9U Ä<i oot 009 09 oot - U 0 9 —aT10Z s u g > ¿ q . ‘ ^ a : £ £ y AUUS=^iy -a tís m i «f T oT sr/OI è «i -n- o nT l4-íflO-Y r a J ^ _m—H i ^17 V1 1_1, —‘AOI V9 = a I ZHKT = ¿ ‘ 0 = SC)A ‘ AOI = S<IA d 002 Ot T

2SJ147

Abstract: idr-12a lta4
Contextual Info: 1 3 S O W S lf f Ä O » O st rti 1 *= C « ^ I M VI' c u V z « 4 s; V * * T f í H si * > v> 3 - M m •4 » z a > S » ^ » W m ílÍ1 3 H S Í0 i» -l » 5 - O « 4 -íi- í'ÍB O * ■ Rf. » a rr rv sr » • >4 a 9 a ft 9 9- /“N »I rr U V V ^