TI TRANSISTOR 208 NPN Search Results

transistor bc 209 npn

Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Contextual Info: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )

2SC4713

Abstract: ssf transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM-*, where ★ is hFE code Dimensions (Units : mm) • very low output on state resistance • low capacitance

SOT23 marking sk

Abstract: KSC2715 Transistor marking SK marking sk sot-23 marking sk transistor
Contextual Info: SAMSUNG S EMI C O NDU CT OR 14ED1 INC KSC2715 ? c , b4142 OOO^S? 1 | f ' 3 i m NPN EPITAXIAL SILICO N TRANSISTOR FM RADIO AMP, MIX, CONV OSC, IF AMP SOT-23 • High Power Gain G pe=30dB ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol VcbO VcEO Vebo

marking code SG transistors

Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Contextual Info: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier

marking S3 amplifier

Abstract: MS6075B800Z
Contextual Info: I I N AMER P H I L I P S / D I S C R E T E GtE D • ^^53^31 X MAINTENANCE TYPE | ' OOlSObS 4 MS6075BB00Z T -33-/ir PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in m ilitary and professional applications. It operates only in

BU2506DF

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

"marking s1a" sot-23

Abstract: 1N916 MMBT3904
Contextual Info: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 200mA • Pb free product are available : 99% Sn above can meet Rohs

Contextual Info: DATA SHEET MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 200mA • Both normal and Pb free product are available : .047(1.20)

Transistor 5331

Abstract: ELLS 110 BU2525AF LLS3131
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE » WÊ 1 ^ 5 3 ^ 3 1 Philips Semiconductors □GEfl3tì3 fl03 BIAPX Product Specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

BU2520AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Contextual Info: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) • Collector current IC = 600mA • Both normal and Pb free product are available : .047(1.20)

M2A MARKING SOT-23

Abstract: 1N914 MMBT2222A MARKING M2A SOT-23 sot23 m2a mmbt2222a m2a
Contextual Info: DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 600mA • Pb free product are available : 99% Sn above can meet Rohs

transistor 2n4401 equivalent

Abstract: transistor 2n4403 equivalent 1N914 2N4401 2N4403 marking EB 202 transistor
Contextual Info: 2N4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • Complimentary PNP device:2N4403 • Pb free product are available :99% Sn above can meet RoHS

2n3904 equivalent transistor

Abstract: 2n3904 TRANSISTOR equivalent equivalent transistor 2n3904 2N3904 1N916 2N3906 marking EB 202 transistor 2N3904 transistor equivalent to
Contextual Info: 2N3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Complimentary PNP device:2N3906 • Pb free product are available :99% Sn above can meet RoHS

Contextual Info: MMST3906 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST3904) Ultra-Small Surface Mount Package SOT-323 TOP VIEW Mechanical Data_

BC548 pin diagram

Abstract: pin diagram transistor BC547 BC547 collector characteristic curve BC546-BC548 pin diagram of transistor BC548 bc547 pnp BC548 npn pin diagram of transistor BC558 BC548 ,BC558 DS21612
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max A 4.45 4.70 4.70 B 4.46 C 12.7 — Mechanical Data_

Amplifier with transistor BC548

Abstract: pin diagram of transistor BC548 BC548 pin diagram pin diagram transistor BC547 BC547 collector characteristic curve transistor BC548 pin diagram of bc548 BC548 B 001 BC548 npn pin diagram of transistor BC558
Contextual Info: BC546 - BC548 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max

BFy 90 transistor

Abstract: BFY90
Contextual Info: * B F Y 90 NPN SIL IC O N T R A N SIST O R , P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R si» Preferred device Dispositif lecom m andé The B F Y 90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1 GHz.

BUS13

Abstract: BUS13A SOAR-1 bus13 philips BUS13/A
Contextual Info: N AMER PHILIPS/DISCRETE bbSaW 25E D 0010725 2 BUS13 BUS13A T - 3 2 - /S - SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: CNX38U J \ _ O P T O C O U P LE R O ptically coupled isolator consisting o f an infrared emitting G a A s diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits. Features

Contextual Info: rr N AMER PHILIPS/DISCRETE bbS3T31 Q01S72S 2 5SE D BUS13 BUS13A y v T-32-/SSILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Transistor 2TY

Contextual Info: I I ÛUA LIT Y T E C H N O L O G I E S CORP 57E D 74bbflSl 0 0 0 M S S 2 5TÔ • û T Y A « CNX38U 7 = ^ OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.

transistor 56B marking

Abstract: TRANSISTOR BC 119
Contextual Info: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series

BFX89

Abstract: case BFX89 transistor IR 652 P
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.