TI3B Search Results

mc141625

Abstract: MC141625FU MC141625/D
Contextual Info: MOTOROLA SC bSE TELECOM D ti3b7SS3 0 GÛ 7 S S Û I M0T5 IbS MOTOROLA Order this document by MC141625/D m SEMICONDUCTOR TECHNICAL DATA MC141625 Advance Information Advanced NTSC/PAL Comb Filter CMOS The Advanced NTSC/PAL Comb Filter is a video signal processor for VCRs and

MC145414

Abstract: CVSD motorola
Contextual Info: bbE ] ti3b7253 □ □fl'iSO? Sflfl «MOTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOTOROLA SC TELEC O M ) M C 145414 Dual Tkinable Low-Pass Sampled Data Filters The MC145414 is sampled data, switched capacitor filter 1Cintended to provide band limiting and signal restoration filtering. It is capable of operating from either

Unit junction transistor UJT

Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
Contextual Info: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse

MV2112

Abstract: MVC2114 MV2110 MV2114 dv60 ti3b
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O J 34 6 3 6 7 2 5 5 M O T O R O L A SC »F|ti3b?2SS 0030110 T J ” <D I O D E S / O P T O 34-C 38 1 1 0 D SILICON TUNING DIODE DICE continued) MVC2110 d ie n o . — SERIES LINE SOURCE — DV60 This die provides performance equal to or better than that of

ZENER DIODE WITH 5 VOLTS OUTPUT

Abstract: 20M diode zener LK 8CA 8CA LZ DIODE MLL5221A MLL5222A MLL5223A MLL5224A MLL5225A MLL5226A
Contextual Info: MOTOROLA SC 1EE D I ti3b7aSS □□7CH 0 0 1 -CDIO DES/O PTOï - 1T -1 MLL5221A thru MLL5270A MOTOROLA SEM ICON DUCTOR TECHNICAL DATA LEADLESS GLASS ZENER D IO D ES 5 0 0 M IL LIW A TT H E R M E T IC A LL Y S EA L E D G L A S S S IL IC O N Z E N E R D IO D E S

mc145412

Abstract: MC145413 145412 MC14551 Dtmfout MC145512
Contextual Info: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D ifferential PECL to TTL Translator M C100ELT23 The MC100ELT23 is a dual differential PECL to TTL translator. Because PECL Positive ECL levels are used only +5V and ground are required. The small outline 8-lead SOIC package and the dual gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C10EL05 M C100EL05 2 -ln p u t D iffe re n tia l A N D /N A N D The MC1OEL/100EL05 is a 2-input differential AND/NAND gate. The device is functionally equivalent to the E404 device with higher performance capabilities.

AN-1203

Abstract: AM Transmitter block diagram tag e9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter p s u f f ix if II li PLASTIC DIP I HI CASE 707 The M C14497 is a PCM rem ote control tra nsm itte r realized in CMOS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the

Contextual Info: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

SOT23 6pin MARKING 3F

Abstract: marking 3f 6pin MBR7535 MBR7545
Contextual Info: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

d 2095 transistor

Contextual Info: 6367254 MOTOROLA SC MOTOROLA Tti de| XSTRS/R F 9 6D 8 1 5 0 7 D * F 3 3 'i5 Order this data sheet by MJ200AV100/D tatTasM oofliso? b SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ra n sisto r M o d u le M J 2 A V 1 Energy M anagem ent Series

1N5825

Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Contextual Info: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW51 MPSW51A* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector-Emltter Voltage MPSW51 MPSW51A v CEO -30 -40 Vdc Collector-Base Voltage MPSW51 MPSW51A

2N4014

Contextual Info: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C

Contextual Info: Order this document by LM2574/D MOTOROLA LM2574 A dvance Information Easy Switcher 0.5 A Step-Down Voltage Regulator EASY SWITCHER™ 0.5 A STEP-DOWN VOLTAGE REGULATOR The LM2574 series of regulators are monolithic integrated circuits Ideally suited for easy and convenient design of a step-down switching regulator

4170B

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

mtd10n05e

Abstract: CASE369A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is

1N5831

Abstract: E5 sot223 1N5829
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

DS5 2502

Abstract: mc68150 motorola
Contextual Info: MOTOROLA ' • b3b?5Mñ DlRlhhl 227 ■ MOTI b^MCesiVo/?5^ 6* SEMICONDUCTOR TECHNICAL DATA 32-B it to 32/16/8-B it Dynam ic READ/WRITE Bus Sizer M C 68150 The MC68150 Dynamic Bus Sizer is designed to allow the 32-bit MC68/LC/EC040 bus, or other 16- to 32-bit processors, to communicate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Phase-Frequency Detector MCH12140 MCK12140 The M C H /K 12140 is a phase fre q u en cy-d ete cto r intended fo r phase-locked loop applications w hich require a minimum am ount of phase and frequency difference at lock. W hen used in conjunction with

Contextual Info: MOTOROLA O rder th is docum ent by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tlining Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum

Valor lt6033

Abstract: LT6033
Contextual Info: Order this document by MC68160/D M M O TO R O LA MC68160 MC68160B MC68160C Enhanced Ethernet Transceiver The MC68160, B and C Enhanced Ethernet Interface Circuit is a BiCMOS device which supports both IEEE 802.3* Access Unit Interface (AUI) and 10BASE-T Twisted Pair (TP) Interface media connections through external