TIC 126 Search Results

CA3156E

Abstract: ca3172e
Contextual Info: T V/CA TV Circuits CA3156 Video/Chroma Processor Features: • A u to m a tic black-level c o n tro l a A u to m a tic co n tro ls fo r con trast and pe aking a A u to m a tic co lo r-le ve l c o n tro l a H orizo n ta l and vertical blan king a A u to m a tic be am -cu rre nt lim itin g

NMC5257A

Abstract: nmc2141
Contextual Info: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

arithmetic logic unit

Contextual Info: Ao ti 6 CMOS 4-Bit Arithmetic Logic Unit High-Voltage Types (20-Volt Rating The RCA-CD4Q181B is a low -pow er fo u r-b it parallel a rithm e tic logic u n it (A L U ) capable o f providing 16 bin a ry arithm e tic operations on tw o fo u r-b it w ords and 16 logical func­

Signetics 2513

Abstract: 2513N 7x5 dot matrix 7x5 dot matrix display cm2141 signetics 2513n R03-2513 -CGR-001 64X7X5 2513NX crt 08 3m
Contextual Info: s ig n o tic s 64X8X5CHARACTER GENERATOR 2513 SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top V ie w T h e Signetics 2 5 1 3 is a high speed 25 60-b it Sta tic ROM N /l P A C K A G E organized as 6 4 x 8 x 5 . A standard 7 x 5 dot m a trix fits w ell in

SP 101302

Abstract: 45K202
Contextual Info: SERIES DIN 41626 Coax Inserts Technical Characteristics 50 Q DIN 41626 Coax Inserts Technische Daten 50 Q DIN 41626 Koaxeinsatze E le c tr ic a l c h a r a c te r is tic s \ E ie k t n s c h e D a te n ; r . ; : V. son C h a ra c te ris tic im p e d a n c e

TPS 1028

Abstract: 3 DG 1008 MBM2011A MIL-883 bubble memory PS512
Contextual Info: MOTOROLA □ A d v a n c e Inform ation GENERAL DESCRIPTION 1 M X 1 BIT MAGNETIC BUBBLE MEMORY DEVICE The M BM 2011A is a 1,048,576 2^0 b it m a gn e tic b u b b le m e m ­ o ry device. A ll re qu ire d m a gn e tic co m p o n e n ts, in c lu d in g p er­

Contextual Info: MOTOROLA SC DIODES/OPTO 3^E D b3b?BSS 00Û3132 2 MOT? Order this data sheet by AAFOC/D MOTOROLA T - H 1 - V C 3 S E M IC O N D U C T O R e z z z TECHNICAL DATA A C T -A lig n Fiber O p tic C o m p o n e n ts Receptacle C o u n te d Fiber O p tic T ran sm itter and Receiver

Contextual Info: £ HV9120 HV9123 S u p e r t e x in c . ^ P re lim in ary High-Voltage Current-Mode PWM Controller Ordering Information M ax D u ty C yc le 16 P in P la s tic D IP P a c k a g e O p tio n s 2 0 Pin P la s tic P L C C 16 Pin C e ra m ic D IP D IC E 4 9% H V 9120P

Contextual Info: I ntegrator Series FPGAs: 40MX and 42MX Fami Ii es Single-Chip ASIC Alternative Features • 9 5 -1 0 0 % Resource U tiliz a tio n , Using A u to m a tic Place and R o u te T o o ls w ith up to 100% Pin F ixing. • D e te rm in is tic , U s e r-C o n tro lla b le T im in g Via D ire c tT im e

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO-126 • C om plem ent to KSC2682 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 • Com plem ent to KSD882 ABSOLUTE MAXIMUM RATINGS C h a ra cte ris tic S ym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC

Contextual Info: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem ent to BD376, BD378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage C ollector Em itter Voltage

HC-88

Abstract: hc81
Contextual Info: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .

1264B

Abstract: opto isolator 1264A OPI 1264 OPI1264D 1264D 1264C Optically Coupled Isolators ELECTRICAL ISOLATION BY OPTO ISOLATOR Ex-89
Contextual Info: OPI-1264 Series Optically coupled isolators Description The OPI-1264, A/B/C and D are a family of o p tic a lly c o u p le d isolators, e a c h consisting of a gallium arsenide, near infrared light emitting diode, coupled to an NPN silicon phototransistor sealed in

BD180

Contextual Info: r z 7 SGS-THOMSON “ 7# B D175/77/79 BD176/78/80 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD175, BD177 and BD179 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plas­ tic package intended for use in medium power linear

Contextual Info: UNCONTROLLED DOCUMENT 07.30 [00.287] 04,85 [00,191] REV. A + PART NUMBER REV. SSI—LXH600GD12V45T A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #111 67. ELEC TRO -O P TIC AL CHARACTERISTICS T a = 25“C 5.50 [0.217] PARAMETER TYP PEAK WAVELENGTH 565 FORWARD VOLTAGE

Contextual Info: Material and Finish - \ E le c t r ic a l C h a r a c te r is tic s C u r r e n t c a p a c ity 3A Ite m S h e ll

Contextual Info: UNCONTROLLED DOCUMENT REV, A 03,20 [ 00 ,126 ] E.C.N. PART NUMBER REV. S S L —L X 3 0 4 4 IG C A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & 4 .1 1 .0 1 02.90 [00.114] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMET[R lf= 2 0 m A TYP PEAK WAVE[ENGTH

Contextual Info: KSC2688 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT VIDEO OUTPUT T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- Base Voltage C h a ra c te ris tic VcBO S ym bol 300 V C ollector- E m itter Voltage V ceo 300 V Em itter- Base Voltage

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING T O -126 • C om plem ent to KSB772 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector- Base Voltage V cB O 40 V C ollector-E m itter Voltage

Contextual Info: r ^ : 7 S C S T H O M 7# S O N BD 4 3 4 / 6 /8 MEDIUM POWER LINEAR AND SWITCHING APPLICATION DESCRIPTIO N The BD433, BD435 and BD437 are silicon epitaxialbase NPN power transistors in Jedec TO -126 plas tic package, intended for use in medium power li­ near and switching applications.

ksd transistor

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SSL—LX2573AYW—TD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE 6.15.01 REDRAWN IN 3D. 5,00 [ 0 ,197 ] 2.00 [0.079] J ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN PEAK WAVELENGTH