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TIME90 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) LED Lamps Surface not Flat 232 (5.9) FEATURES * T1 (3mm) Package * Double Hetero Junction Technology * Choice of Diffused Lens-LH 3364 or Red |
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3344-QO 3364-MO LH3344, LH3344 LH3364 time-10% time-90% 053b32b | |
Contextual Info: OTDK. 78Q8392L Low Power Ethernet Coaxial Transceiver TDK SEMICONDUCTOR CORP. February 1998 DESCRIPTION FEATURES The 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a 10 |
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78Q8392L 78Q8392L 10Base5 10Base2 28-Pin 78Q8392L-28CH | |
Contextual Info: AU105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)27 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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AU105 time900n | |
Contextual Info: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20 |
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MG50D2DM1 time900n HL080HD5 Code4-310 NumberTR00400310 | |
Contextual Info: NTC1868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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NTC1868 time900n | |
Contextual Info: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200n |
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GSI550 Junc-Case700m delay100nà time200nà time900nà StyleTO-218 Code5-71 NumberTR00500071 | |
33642PContextual Info: 44E D SIEMENS CMPNTSi OPTO SIEMENS • fla3b32b 0005441 5 BISIEX' LH 3343-PO SINGLE HETRO JUNCTION LH 3363-KO DOUBLE HETRO JUNCTION LH 3344-QO DOUBLE HETRO JUNCTION LH 3364-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T1 3mm LED LAMP T-MH3 P ack ag e Dim ensions in Inches (mm) |
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fla3b32b 3343-PO 3363-KO 3344-QO 3364-LO LH3363, LH3363 LH3364, LH3364 LH3343/3363/3344/3364 33642P | |
XCKM
Abstract: xck-m
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Lens-LH3364 LH3343/3344 LH3363/3364 3344-QO 3364-MO IH3344, time-10% time-90% LH3344/3364 XCKM xck-m | |
Contextual Info: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C |
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5424-QO 5464-LO time-10% time-90% LH5424/5464 5424-QO 5464-LO LH5424) LH5464) 23b32b | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Capacitors - Aluminum SMD for High Temperature I INNOVAT AND TEC O L OGY 140 CRH N HN VISHAY BCcomponents O 19 62-2012 140 CRH SMD Aluminum Capacitor, RoHS Compliant Key Benefits • • • • • • High-temperature operation 125 ºC |
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AEC-Q200 MAL214099xxxE3 23-Apr-13 DESCRIBED23-Apr-13 | |
Contextual Info: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for |
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78Q8392L/A03 78Q8392L/A03 78Q8392L/A02 78Q8392L/A03. 10Base5 10Base2 | |
78Q8392L-CP
Abstract: 27 MHZ rc transmitter teridian 78Q8392L aui isolation transformer circuit diagram of rc transmitter and receiver pulse transformer driver ic 78Q8392L-28CH heart monitor circuit trf 510 transistor 78Q8392L
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78Q8392L 78Q8392L 10Base5 10Base2 78Q8392L-CP 27 MHZ rc transmitter teridian 78Q8392L aui isolation transformer circuit diagram of rc transmitter and receiver pulse transformer driver ic 78Q8392L-28CH heart monitor circuit trf 510 transistor | |
Led 5mm 35 mA 3VContextual Info: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C |
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5424-QO 5464-LO T13/4 T13/4 time-10% time-90% LH5424/5464 LH5424) LH5464) 00D6454 Led 5mm 35 mA 3V | |
ICL 2025 audio amp
Abstract: 73K224SL-IP STS Bv 1500 current transformers XX111X varistor 594 ph 250v ph 4148 zener diode pdf electra 171-3 MIDCOM 671-8001 75T2091-IH zener PH 4148
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78Q8392LA03
Abstract: 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier
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78Q8392L/A03 78Q8392L/A03 78Q8392L/A02 78Q8392L/A03. 10Base5 10Base2 78Q8392LA03 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier | |
Contextual Info: SJS Series Sector Antenna SJS515090-16 Innovative Technology for a Connected World 5.5 GHz DUAL-SLANT POLARIZED HIGH-PERFORMANCE 90° SECTOR The Laird Technologies SJS515090-16 5.5 GHz wide-band, dual-slant polarized 90° sector antenna covers frequencies from 5.15-5.85 GHz. Extremely low-side lobes, null fill below the |
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SJS515090-16 SJS515090-16 45deg) -45deg) | |
heteroContextual Info: SIEMENS LH 3344 DOUBLE HETERO JUNCTION LH 3364 DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3 mm LED Lamp Dimensions in inches (mm) GEX6717 FEATURES • Lens -LH3344: rad, dear - LH3364: rad diffused • Double heterojunction in GaAIAs technology • Especially high luminous Intensity |
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GEX6717 -LH3344: LH3364: 100mA, time-10% time-90% 3344-QT 3344-R LH3344-S LH3344-T hetero | |
FAG 32 diode
Abstract: SHARP "lot code" FAG 28 diode diode FAG 50 300C LT1W92A FAG 32 FAG 50 diode
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95Y036 LT1W92A FAG 32 diode SHARP "lot code" FAG 28 diode diode FAG 50 300C LT1W92A FAG 32 FAG 50 diode | |
APP20Contextual Info: I I APP20VED 3Y: I ELECTRONIC COMPONENTS GIOU? DATE : I I PAGE 8 Pages L REPRESENTATIVE DIVISION r ‘pEc’F’cAT’ON DE’/ICI [ S?ECIFIC.\TION FOR OPTO–ELECTRONIC ‘EVICES ‘lv\ “- Ga? Yello7-grseen Chip LZD Device YODEL ~0. LTLE9?.A ! 1. This specification sheets include the cance~ts under the ccpyright of Sharz Corporation (“Sharp” . |
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APP20VED Time90 120sec at30C, APP20 | |
3364-MQ
Abstract: LH 3364-MQ
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3344-QO 3364-MO Lens-LH3364 LH3344 LH3364 10rnA) time-10% time-90% 3364-MQ LH 3364-MQ | |
Contextual Info: NTC1867 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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NTC1867 time900n | |
LH 3A 05Contextual Info: bOE D • SIEMENS 3 8535bOS 004b253 Ibi « S I E Û LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp SIEMENS AKTIENGESELLSCHAF Package Dimensions in Inches (mm) <2M ) T 204 ( 5 2 ) _ 1 7 7 (4 5 ) 0 3 1 (0 8 ) |
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8535bOS 004b253 3344-QO 3364-MO LH3343/3344 LH3363/3364 3364-MO LH3344, time-10% LH 3A 05 | |
AT27C256R25JI
Abstract: AT27C258R-20KI 27C256R AT27C256 AT27C256R AT27C256R15LC AT27C256R-12DC AT27C256R20JI AT27C256R-25DM AT27C256R12LI
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0D01711 AT27C256R -90ns 28-Lead 32-Pad 32-Lead 200mA AT27C256 Military/883C 28DW6 AT27C256R25JI AT27C258R-20KI 27C256R AT27C256R15LC AT27C256R-12DC AT27C256R20JI AT27C256R-25DM AT27C256R12LI | |
aui isolation transformer
Abstract: 78Q8392L-28CH 78Q8392L 78Q8392L-CP
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78Q8392L 78Q8392L 10Base5 10Base2 aui isolation transformer 78Q8392L-28CH 78Q8392L-CP |